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ROHM Power Field Effect Transistors (FET) 60

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
R6524ENJTL by ROHM

R6524ENJTL

ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;

654 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

24 A

.185 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e2

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

72 A

YES

TIN COPPER

GULL WING

SINGLE

SWITCHING

SILICON

HP8M51TB1 by ROHM

HP8M51TB1

ROHM

ROHM's HP8M51TB1 is a Power FET with N/P-Channel, 2 elements w/ diode. It has 100V DS breakdown voltage, 18A max pulsed drain current, and 0.18 ohm RDS(on). Ideal for switching applications in enhancement mode, this MOSFET comes in a small outline package for surface mount assembly.

2.9 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100 V

.18 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

18 A

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

R6030ENZ4C13 by ROHM

R6030ENZ4C13

ROHM

ROHM R6030ENZ4C13 is a N-CHANNEL FET with 600V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 0.13 ohm on-resistance, and 80A pulsed drain current.

636 mJ

SINGLE WITH BUILT-IN DIODE

600 V

30 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

80 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

R6047ENZ4C13 by ROHM

R6047ENZ4C13

ROHM

ROHM R6047ENZ4C13 is a N-CHANNEL FET with 600V DS breakdown voltage and 47A max drain current. Ideal for switching applications, it features a built-in diode, 0.072 ohm max on resistance, and 141A pulsed drain current.

1135 mJ

SINGLE WITH BUILT-IN DIODE

600 V

47 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

141 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

R6076KNZ4C13 by ROHM

R6076KNZ4C13

ROHM

ROHM R6076KNZ4C13 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, 76A ID, and 0.042 ohm RDS(on). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Suitable for ENHANCEMENT MODE operation in various electronic devices.

1954 mJ

SINGLE WITH BUILT-IN DIODE

600 V

76 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

228 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

SCT3030ALHRC11 by ROHM

SCT3030ALHRC11

ROHM

ROHM's SCT3030ALHRC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 175A IDM. Ideal for switching applications, it features 0.039 ohm max drain-source resistance and operates in enhancement mode at up to 175°C.

SINGLE WITH BUILT-IN DIODE

650 V

70 A

70 A

.039 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

265

N-CHANNEL

262 W

175 A

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

10

SWITCHING

SILICON CARBIDE

SCT3160KLHRC11 by ROHM

SCT3160KLHRC11

ROHM

ROHM's SCT3160KLHRC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 17A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 103W, this transistor is designed for high-performance requirements in automotive and industrial sectors.

SINGLE WITH BUILT-IN DIODE

1200 V

17 A

17 A

.208 ohm

METAL-OXIDE SEMICONDUCTOR

18 pF

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

265

N-CHANNEL

103 W

42 A

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

10

SWITCHING

SILICON CARBIDE

SCT3080ARC14 by ROHM

SCT3080ARC14

ROHM

ROHM's SCT3080ARC14 is a N-CHANNEL FET with 650V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a 0.104 ohm on-resistance and 75A pulsed drain current. The transistor has a single configuration with built-in diode, through-hole terminals, and operates in enhancement mode.

SINGLE WITH BUILT-IN DIODE

650 V

30 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

75 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

SCT3022KLGC11 by ROHM

SCT3022KLGC11

ROHM

ROHM SCT3022KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage. Ideal for switching applications, it has a max IDM of 237A and ID of 95A. With a package style of FLANGE MOUNT, it operates in enhancement mode at up to 175°C.

SINGLE WITH BUILT-IN DIODE

1200 V

95 A

95 A

.0286 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

427 W

237 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

SCT3105KLGC11 by ROHM

SCT3105KLGC11

ROHM

ROHM's SCT3105KLGC11 is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 24A Drain Current, 0.137 ohm On Resistance, and 175°C Operating Temperature.

SINGLE WITH BUILT-IN DIODE

1200 V

24 A

24 A

.137 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

134 W

60 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

RH6G040BGTB1 by ROHM

RH6G040BGTB1

ROHM

ROHM's RH6G040BGTB1 is a N-CHANNEL FET with 40V DS breakdown voltage, 380A IDM, and 0.0036 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.

56 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

59 W

380 A

YES

FLAT

DUAL

SWITCHING

SILICON

RD3L03BBGTL1 by ROHM

RD3L03BBGTL1

ROHM

ROHM RD3L03BBGTL1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0113 ohm RDS(on) and 35A ID. With a max power dissipation of 50W, it has a temperature range of -55 to +150 °C.

21 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

35 A

.0113 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

50 W

200 A

YES

GULL WING

SINGLE

SWITCHING

SILICON