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HP8M51TB1

ROHM

HP8M51TB1 by ROHM

ROHM's HP8M51TB1 is a Power FET with N/P-Channel, 2 elements w/ diode. It has 100V DS breakdown voltage, 18A max pulsed drain current, and 0.18 ohm RDS(on). Ideal for switching applications in enhancement mode, this MOSFET comes in a small outline package for surface mount assembly.

Median Price

$2.346

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$1.080

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Overview

Upgrade your power systems with the ROHM HP8M51TB1 Power Field Effect Transistor. Manufactured by industry leader ROHM, this high-quality transistor offers reliable performance for a variety of switching applications. With separate N-Channel and P-Channel elements and built-in diodes, this transistor provides enhanced functionality and versatility. Whether you're looking to enhance efficiency, improve performance, or streamline operations, the HP8M51TB1 is the perfect solution for your power needs. Experience the benefits of cutting-edge technology and superior quality with this innovative product from ROHM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This transistor can be used in a variety of circuit configurations, offering flexibility in design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode helps to protect the transistor from voltage spikes and reverse current flow, enhancing its reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient switching performance.

Surface Mount: YES

Surface mounting capability allows for easy integration into PCB designs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this transistor can handle higher voltages without damage, making it suitable for various applications.

Maximum Pulsed Drain Current (IDM): 18 A

The high pulsed drain current rating allows for handling high peak currents, making it ideal for power applications.

Avalanche Energy Rating (EAS): 2.9 mJ

The high avalanche energy rating indicates the transistor's ability to withstand voltage spikes and surges, enhancing its reliability.

Maximum Drain-Source On Resistance: 0.18 ohm

The low on-resistance helps to minimize power losses and improve efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) HP8M51TB1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

2.9 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HP8M51TB1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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