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HP8M31TB1

ROHM

HP8M31TB1 by ROHM

ROHM HP8M31TB1 is a Power FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has 60V breakdown voltage and 0.073 ohm RDS(on). Ideal for switching applications, this MOSFET offers 18A pulsed drain current and 5.4mJ avalanche energy rating.

Median Price

$2.880

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Chip1Stop

Japan . 250 parts In-Stock

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$2.880

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$1.460

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$1.360

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$2.880

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$1.360

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Mouser Electronics

USA . 4,053 parts In-Stock

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$3.360

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$1.480

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$1.200

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$1.130

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$1.130

DigiKey

USA . 2,323 parts In-Stock

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$3.360

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$1.514

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$1.195

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Verical

USA . 2,340 parts In-Stock

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$1.022

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$0.915

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UK . 290 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Ampacity Inc.

Singapore . 1,525 parts In-Stock

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$0.600

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CoreStaff

Japan . 2,500 parts In-Stock

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$2.550

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$1.002

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$0.856

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$2.550

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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$1.550

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$1.060

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Aranea Global

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Overview

Upgrade your power applications with the HP8M31TB1 by ROHM. With a reputation for superior quality and reliability, ROHM delivers power field effect transistors that exceed expectations. Designed for switching applications, this N-channel and P-channel FET features a separate configuration with built-in diode, ensuring optimal performance. Experience enhanced efficiency and dependable operation with a maximum pulsed drain current of 18 A and minimum DS breakdown voltage of 60 V. Trust ROHM to provide cutting-edge technology and unmatched value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode simplifies circuit design and enhances efficiency.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Surface mount capability facilitates easy installation and saves space on the circuit board.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage provides reliable performance and protects the transistor from voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape allows for compact packing and efficient use of space on the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation enables precise control over the transistor's on/off state for improved efficiency.

No. of Elements: 2

Having two elements allows for more complex circuit designs and versatile functionality.

Maximum Pulsed Drain Current (IDM): 18 A

The high pulsed drain current rating ensures reliable performance under heavy load conditions.

Avalanche Energy Rating (EAS): 5.4 mJ

The high avalanche energy rating indicates good ruggedness and protection against voltage surges.

No. of Terminals: 6

Having six terminals allows for easy connection and integration into the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures high performance, low power consumption, and reliability.

Transistor Element Material: SILICON

Silicon material provides stable and consistent performance over a wide range of operating conditions.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and corrosion resistance, enhancing the transistor's reliability.

Maximum Drain-Source On Resistance: 0.073 ohm

The low drain-source on resistance minimizes power loss and heat generation in the transistor.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and ease of connection in different circuit layouts.

Case Connection: DRAIN

The drain case connection simplifies the circuit layout and improves thermal management for better performance.

Technical Specifications

Power Field Effect Transistors (FET) HP8M31TB1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

5.4 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.073 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HP8M31TB1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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