Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ROHM's SCT3080ARC14 is a N-CHANNEL FET with 650V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a 0.104 ohm on-resistance and 75A pulsed drain current. The transistor has a single configuration with built-in diode, through-hole terminals, and operates in enhancement mode.
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Provides good insulation and protection for the internals of the transistor, ensuring reliability and longevity.
N-channel FETs generally have higher electron mobility and faster switching speeds compared to P-channel FETs, making them ideal for high-frequency applications.
Designed specifically for switching applications, ensuring efficient power management and control.
Can handle high voltages, making it suitable for power electronics applications.
Rectangular shape allows for easy mounting and can fit well in tight spaces on the circuit board.
MOSFET technology offers high switching speeds and low power consumption, making it efficient for various applications.
Can handle high current loads, making it suitable for power-hungry devices or circuits.
Low on-resistance leads to minimal power loss and heat generation during operation.
Power Field Effect Transistors (FET) SCT3080ARC14 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SCT3080ARC14 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
Sinyork
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
LM358N
Intersil
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
BAV99
Lite-on Technology
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 175 Cel; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us;
SS14
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Pulse Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
Dc Components
Protek Devices
ABS25-32.768KHZ-1-T
Abracon
Abracon's ABS25-32.768KHZ-1-T crystal oscillator offers 10 ppm frequency tolerance, 126% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal operating frequency, such as IoT devices and precision timing systems.
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
General Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Kec
BSS123-7-F
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
IRF9530
International Rectifier
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Maximum Drain Current (ID): 12 A;
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFR5305TRPBF
Infineon Technologies
IRFR5305TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 175 °C. The PLASTIC/EPOXY package with GULL WING terminals offers high power dissipation of 110W in a small outline style.
IRF7425TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
SI7315DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7315DN-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 10A IDM and 0.315 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE with a 9.8mJ EAS rating. Suitable for surface mount designs, it has a SQUARE package shape and DUAL terminal position.
G3R350MT12D
Genesic Semiconductor
G3R350MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for SWITCHING applications. It features a max IDM of 16A and EAS of 43mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and DRAIN case connection, it offers 0.455 ohm RDS(on) and can handle up to 63W power dissipation.
IRFR540ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 91 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
SQ2389ES-T1_GE3
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IRF7416TRPBF-1
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
DMG2305UX-13
DMG2305UX-13 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 1.4W. This MOSFET is surface mountable, with Gull Wing terminals and can withstand temperatures up to 150°C.
JANTX2N6796
Unitrode
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation Ambient: 25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 32 A;
IRF5210PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
CSD18532Q5B
Texas Instruments
CSD18532Q5B by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm Drain-Source Resistance. Suitable for high-power switching circuits with operating temperatures from -55 to 150 °C.
BSC600N25NS3GATMA1
BSC600N25NS3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor operates b/w -55 to 150 °C and has a max power dissipation of 125W in a SMALL OUTLINE package.
FDS6982AS_NL
Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
CSD19534Q5AT
CSD19534Q5AT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It is used for switching applications, has a max IDM of 137A and an EAS rating of 55mJ.
SI7461DP-T1-GE3
Vishay Intertechnology's SI7461DP-T1-GE3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A Drain Current, and 0.0145 ohm On Resistance. Ideal for power management applications due to its 60A Pulsed Drain Current capability and 125mJ Avalanche Energy Rating in a small outline package.
IRFB4115PBF
IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
IRLR2908TRPBF
Infineon's IRLR2908TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 150A IDM. Ideal for SWITCHING applications, it features 0.028 ohm RDS(ON) and 120W Pdiss. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it operates up to 175°C making it suitable for high-power electronics.
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SCT3080KLGC11
ROHM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain Current (ID): 31 A; JESD-609 Code: e3;
SCT3160KLGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Position: SINGLE; JEDEC-95 Code: TO-247;
SCT3160KLHRC11
ROHM's SCT3160KLHRC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 17A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 103W, this transistor is designed for high-performance requirements in automotive and industrial sectors.
SCT30N120
STMicroelectronics
SCT30N120 by STMicroelectronics is a N-CHANNEL FET with 40A max drain current and 270W power dissipation. Ideal for high-power applications, it operates at up to 200°C and features metal-oxide semiconductor technology.
SCT3022ALGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 650 V; Package Shape: RECTANGULAR;
SCT3022KLGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 427 W; No. of Terminals: 3; Terminal Position: SINGLE;
SCT3030ALGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 175 A; Peak Reflow Temperature (C): 265; Terminal Position: SINGLE;
SCT3120ALGC11
ROHM SCT3120ALGC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 21A max drain current. Ideal for switching applications, it features 0.156 ohm max on-resistance and 52A pulsed drain current.
SCT3105KLGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 134 W; Transistor Element Material: SILICON CARBIDE; Maximum Drain-Source On Resistance: .137 ohm;
SCT3040KLGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 55 A; JEDEC-95 Code: TO-247; Package Body Material: PLASTIC/EPOXY;
SCT3030KLGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SCT3060ARC14
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-247; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SCT3040KLHRC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 262 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
SCT3080KLHRC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .104 ohm;
SCT3017ALGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 427 W; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
SCT3060ALGC11
ROHM's SCT3060ALGC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 97A IDM. Ideal for switching applications, it features 0.078 ohm max RDS(on) and SILICON CARBIDE technology. Package style: FLANGE MOUNT, terminal finish: TIN, operating mode: ENHANCEMENT MODE.
SCT30N120H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; JESD-30 Code: R-PSFM-T3; No. of Elements: 1;
SCT3160KW7TL
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN;
SCT3030ALHRC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 262 W; Maximum Drain Current (ID): 70 A; Peak Reflow Temperature (C): 265;
SCT3080ALGC11
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 30 A; Minimum DS Breakdown Voltage: 650 V;
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