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R6076KNZ4C13

ROHM

R6076KNZ4C13 by ROHM

ROHM R6076KNZ4C13 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, 76A ID, and 0.042 ohm RDS(on). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Suitable for ENHANCEMENT MODE operation in various electronic devices.

Median Price

$13.400

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 28 parts In-Stock

1+ parts

$9.920

100+ parts

$6.950

1k+ parts

$6.420

10k+ parts

$5.860

28

$9.920

$6.950

$6.420

$5.860

Farnell

UK . 10 parts In-Stock

1+ parts

$12.760

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10

$12.760

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Newark

USA . 10 parts In-Stock

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$14.040

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10

$14.040

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Element14

Singapore . 10 parts In-Stock

1+ parts

$29.520

100+ parts

$15.660

1k+ parts

$15.360

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10

$29.520

$15.660

$15.360

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Verical

USA . 100 parts In-Stock

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100

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Bristol Electronics

USA . 600 parts In-Stock

1+ parts

$13.412

100+ parts

$9.389

1k+ parts

$8.718

10k+ parts

-

600

$13.412

$9.389

$8.718

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Vyrian

USA . 3,974 parts In-Stock

1+ parts

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3,974

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Nova Conductors

Japan . 700 parts In-Stock

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700

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ACDS - Activité Composants Distribution Service

France . 600 parts In-Stock

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600

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Dan-Mar Components

USA . 600 parts In-Stock

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600

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Distributors (Availability)

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Ampacity Inc.

Singapore . 62 parts In-Stock

1+ parts

$7.930

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62

$7.930

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CoreStaff

Japan . 206 parts In-Stock

1+ parts

$13.340

100+ parts

$7.521

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206

$13.340

$7.521

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Continental Prestige Electronics

USA . 23 parts In-Stock

1+ parts

$16.050

100+ parts

$10.430

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23

$16.050

$10.430

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Microchip USA

USA . 131 parts In-Stock

1+ parts

$46.897

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131

$46.897

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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iodParts Technologies Inc.

India . 600 parts In-Stock

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600

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of innovation with the R6076KNZ4C13 by ROHM, a high-quality N-CHANNEL Power Field Effect Transistor (FET) designed for switching applications. Manufactured with precision and expertise, this single transistor with built-in diode offers customers unrivaled performance and reliability. Whether you're looking to enhance your electronic devices or improve efficiency in your systems, this ROHM FET provides maximum pulsing drain current of 228A and a minimum DS breakdown voltage of 600V. Trust in ROHM for cutting-edge technology that delivers results. Elevate your projects with the R6076KNZ4C13 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and stability, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer better performance and efficiency compared to P-channel transistors, making this product a good choice for switching applications.

Minimum DS Breakdown Voltage: 600 V

With a high breakdown voltage, this FET can handle high voltage applications with ease, ensuring safety and reliability.

Maximum Pulsed Drain Current (IDM): 228 A

The high pulsed drain current rating allows for handling of large currents during switching operations, making this FET suitable for high-power applications.

Avalanche Energy Rating (EAS): 1954 mJ

The high avalanche energy rating makes this FET reliable and robust in handling transient voltage spikes, offering protection to the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides efficient performance, low power consumption, and high reliability, making it a good choice for various applications.

Maximum Drain Current (ID): 76 A

The high drain current rating allows for carrying high currents during normal operation, making this FET suitable for power switching applications.

Maximum Drain-Source On Resistance: 0.042 ohm

The low on-resistance ensures minimal power loss and high efficiency in the circuit, making this FET a reliable choice for power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) R6076KNZ4C13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

1954 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

76 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

228 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6076KNZ4C13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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