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RH6G040BGTB1

ROHM

RH6G040BGTB1 by ROHM

ROHM's RH6G040BGTB1 is a N-CHANNEL FET with 40V DS breakdown voltage, 380A IDM, and 0.0036 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.

Median Price

$1.490

Lifecycle Status

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7

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1k+

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Newark

USA . 33 parts In-Stock

1+ parts

$1.490

100+ parts

$0.977

1k+ parts

$0.754

10k+ parts

$0.591

33

$1.490

$0.977

$0.754

$0.591

Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

$2.510

100+ parts

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1,000

$2.510

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Verical

USA . 5,540 parts In-Stock

1+ parts

-

100+ parts

$0.706

1k+ parts

$0.585

10k+ parts

$0.544

5,540

-

$0.706

$0.585

$0.544

Farnell

UK . 70 parts In-Stock

1+ parts

-

100+ parts

$0.840

1k+ parts

$0.648

10k+ parts

$0.635

70

-

$0.840

$0.648

$0.635

Element14

Singapore . 70 parts In-Stock

1+ parts

-

100+ parts

$1.490

1k+ parts

$1.130

10k+ parts

$1.110

70

-

$1.490

$1.130

$1.110

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Vyrian

USA . 3,954 parts In-Stock

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3,954

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Ampacity Inc.

Singapore . 3,220 parts In-Stock

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$0.344

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3,220

$0.344

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CoreStaff

Japan . 977 parts In-Stock

1+ parts

$1.260

100+ parts

$0.493

1k+ parts

$0.451

10k+ parts

-

977

$1.260

$0.493

$0.451

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Microchip USA

USA . 8,897 parts In-Stock

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$5.316

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8,897

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Continental Prestige Electronics

USA . 80 parts In-Stock

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100+ parts

$1.050

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$0.782

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80

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$1.050

$0.782

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the RH6G040BGTB1 by ROHM. This high-quality Power FET boasts a single configuration with a built-in diode, making it perfect for switching applications. With a maximum operating temperature of 150°C and a minimum operating temperature of -55°C, this FET offers unparalleled reliability and versatility. Whether you're looking to enhance your electronic devices or optimize power management systems, the RH6G040BGTB1 delivers exceptional performance and efficiency. Elevate your projects with ROHM's cutting-edge technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high efficiency and low on-resistance, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps to prevent reverse currents and provides additional circuit protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and low power dissipation.

Surface Mount: YES

Being surface mountable, this FET is easy to integrate into compact electronic designs and offers improved thermal performance.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this FET can handle high voltage applications with ease.

Maximum Pulsed Drain Current (IDM): 380 A

Capable of handling high pulsed drain currents, this FET is suitable for demanding applications that require high power output.

Maximum Power Dissipation (Abs): 59 W

With a maximum power dissipation of 59W, this FET can handle high power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance even in harsh operating conditions.

Maximum Drain Current (ID): 40 A

With a maximum drain current of 40A, this FET can handle high current loads effectively.

Maximum Drain-Source On Resistance: 0.0036 ohm

The low on-resistance of 0.0036 ohm minimizes power loss and improves efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) RH6G040BGTB1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

56 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.0036 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

85 pF

JESD-30 Code:

R-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

380 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RH6G040BGTB1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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