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RSQ045N03TR

ROHM

RSQ045N03TR by ROHM

ROHM's RSQ045N03TR is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 4.5A ID, 0.056ohm RDS(on), and 1.25W Power Dissipation in a SMALL OUTLINE package. Operating at up to 150°C, it suits ENHANCEMENT MODE requirements with GULL WING terminals for surface mount assembly.

Median Price

$0.359

Lifecycle Status

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1k+

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$0.341

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AZTECH Wire

Italy . 508 parts In-Stock

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Overview

Unlock the power of innovation with the ROHM RSQ045N03TR Power Field Effect Transistor. Manufactured by industry leader ROHM, this N-CHANNEL FET offers unparalleled quality and reliability for a wide range of switching applications. With a maximum pulsing drain current of 18A and a low on-resistance of 0.056 ohm, this transistor delivers exceptional performance in a compact, surface-mount package. Experience enhanced efficiency and control with the RSQ045N03TR and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used for power switching applications due to their efficient performance and low on-resistance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can provide protection against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for use in power management circuits.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving on PCBs.

Minimum DS Breakdown Voltage: 30 V

The 30V breakdown voltage ensures reliable performance in low to medium voltage applications.

Maximum Drain Current (ID): 4.5 A

With a maximum drain current of 4.5A, this FET can handle substantial current loads, suitable for various power requirements.

Maximum Power Dissipation (Abs): 1.25 W

The maximum power dissipation of 1.25W allows for efficient heat dissipation, ensuring the FET operates within safe temperature limits.

Maximum Drain-Source On Resistance: 0.056 ohm

The low on-resistance of 0.056 ohm results in minimal power loss and high efficiency during switching operations.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand elevated temperatures, providing reliability in various environments.

Technical Specifications

Power Field Effect Transistors (FET) RSQ045N03TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.5 A

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.056 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

18 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RSQ045N03TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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