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RDD023N50TL

ROHM

RDD023N50TL by ROHM

ROHM RDD023N50TL is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 8A max pulsed drain current and 5.5 ohm max drain-source resistance. The transistor operates in enhancement mode and has a built-in diode, suitable for surface mount configurations.

Median Price

$0.368

Lifecycle Status

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5

In-Stock Inventory

1k+

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Mouser Electronics

USA . 408 parts In-Stock

1+ parts

$0.860

100+ parts

$0.514

1k+ parts

$0.376

10k+ parts

$0.296

408

$0.860

$0.514

$0.376

$0.296

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.328

1k+ parts

$0.302

10k+ parts

$0.291

2,500

-

$0.328

$0.302

$0.291

Chip1Stop

Japan . 2,470 parts In-Stock

1+ parts

-

100+ parts

$0.368

1k+ parts

$0.316

10k+ parts

$0.267

2,470

-

$0.368

$0.316

$0.267

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Nova Conductors

Japan . 10 parts In-Stock

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$0.394

100+ parts

-

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10

$0.394

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Vyrian

USA . 1,777 parts In-Stock

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1,777

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Semicontronic

India . 1,731 parts In-Stock

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$0.279

100+ parts

$0.272

1k+ parts

$0.271

10k+ parts

-

1,731

$0.279

$0.272

$0.271

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Ampacity Inc.

Singapore . 1,475 parts In-Stock

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$0.279

100+ parts

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1,475

$0.279

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Argo Parts USA

USA . 3,796 parts In-Stock

1+ parts

$0.394

100+ parts

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10k+ parts

$0.382

3,796

$0.394

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-

$0.382

Continental Prestige Electronics

USA . 3,088 parts In-Stock

1+ parts

$0.394

100+ parts

-

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10k+ parts

$0.386

3,088

$0.394

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$0.386

CoreStaff

Japan . 2,500 parts In-Stock

1+ parts

$0.816

100+ parts

$0.361

1k+ parts

$0.314

10k+ parts

-

2,500

$0.816

$0.361

$0.314

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Kepictronics

USA . 1,968 parts In-Stock

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1,968

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Overview

Unlock the power of innovation with the RDD023N50TL by ROHM. Designed with precision and expertise, this N-CHANNEL Power Field Effect Transistor offers unparalleled performance in switching applications. With a maximum DS Breakdown Voltage of 500V and a Maximum Pulsed Drain Current of 8A, this transistor is built to handle even the most demanding tasks. Its small outline package shape and gull wing terminal form make it easy to install, while its metal-oxide semiconductor technology ensures reliability and efficiency. Trust ROHM to deliver quality and value in every component, making the RDD023N50TL the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have higher mobility and conductivity, allowing for faster switching speeds and better performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps with reverse current flow protection, ensuring safe operation and preventing damage to the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers efficient and precise control over circuit operation.

Surface Mount: YES

Surface mount FETs are convenient for automated assembly processes, saving time and cost in manufacturing.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this FET can handle high voltage spikes and surges, enhancing overall system reliability.

Peak Reflow Temperature °C: 260

This high peak reflow temperature ensures reliable soldering and robust mechanical connections during assembly.

Technical Specifications

Power Field Effect Transistors (FET) RDD023N50TL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

21 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

5.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

8 A

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RDD023N50TL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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