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ZDX080N50

ROHM

ZDX080N50 by ROHM

ROHM ZDX080N50 is a N-CHANNEL FET with 500V DS breakdown voltage, 8A max drain current, and 0.85 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 24A pulsed drain current. Package style: flange mount, terminal form: through-hole.

Median Price

$1.487

Lifecycle Status

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1k+

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Chip1Stop

Japan . 200 parts In-Stock

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$1.090

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$1.090

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Verical

USA . 40 parts In-Stock

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$1.884

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$1.884

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Vyrian

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Nova Conductors

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Semtec, LLC

USA . 40 parts In-Stock

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40

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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CoreStaff

Japan . 40 parts In-Stock

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$0.412

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$0.386

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$0.383

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Microchip USA

USA . 9,171 parts In-Stock

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$10.660

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Aranea Global

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Overview

Unlock the power of efficiency and reliability with the ZDX080N50 by ROHM. As a leading manufacturer in the industry, ROHM delivers top-notch quality with this N-CHANNEL Power FET. Ideal for switching applications, this transistor offers a maximum DS Breakdown Voltage of 500V and a Maximum Drain Current of 8A, providing exceptional performance and durability. With a package style of flange mount and a maximum operating temperature of 150°C, the ZDX080N50 is designed to meet your high-power needs. Trust ROHM to deliver superior technology and innovation in every product, ensuring that you get the value and benefits you deserve. Elevate your projects and experience the advantages of the ZDX080N50 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, providing better performance and efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against voltage spikes, making it more convenient for use in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance and efficiency in controlling power flow.

Minimum DS Breakdown Voltage: 500 V

The high breakdown voltage allows for handling high voltage applications, making it reliable and safe for use in various scenarios.

Package Shape: RECTANGULAR

The rectangular shape provides compatibility with standard mounting techniques, making it easy to integrate into existing systems.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers easy and secure solder connections, ensuring stable electrical connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer fast switching speeds and low power dissipation, enhancing overall performance efficiency.

Maximum Pulsed Drain Current (IDM): 24 A

High pulsed drain current capability allows for handling short-term high-power demands, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 40 W

The high power dissipation rating ensures the transistor can handle high power levels without overheating, increasing its reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, reliability, and efficiency, making it a preferred choice for power FETs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can operate in harsh environments without compromising performance.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures easy integration into various electronic systems.

Technical Specifications

Power Field Effect Transistors (FET) ZDX080N50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.85 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

24 A

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZDX080N50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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