Loading...

R6009ENX

ROHM

R6009ENX by ROHM

ROHM R6009ENX is a N-CHANNEL FET with 600V DS breakdown voltage, 18A IDM, and 0.535 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it offers 153mJ EAS rating for efficient performance.

Median Price

$3.080

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 453 parts In-Stock

1+ parts

$3.840

100+ parts

$2.330

1k+ parts

$1.760

10k+ parts

$1.660

453

$3.840

$2.330

$1.760

$1.660

DigiKey

USA . 188 parts In-Stock

1+ parts

$3.920

100+ parts

$2.283

1k+ parts

$1.622

10k+ parts

$1.596

188

$3.920

$2.283

$1.622

$1.596

Chip1Stop

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

$2.320

1k+ parts

-

10k+ parts

-

100

-

$2.320

-

-

Verical

USA . 55 parts In-Stock

1+ parts

-

100+ parts

$1.556

1k+ parts

-

10k+ parts

-

55

-

$1.556

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

55

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 55 parts In-Stock

1+ parts

$0.591

100+ parts

$0.554

1k+ parts

$0.550

10k+ parts

-

55

$0.591

$0.554

$0.550

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 16,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,073

-

-

-

-

Microchip USA

USA . 2,656 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,656

-

-

-

-

Authorized Procurement Solutions

USA . 196 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

196

-

-

-

-

Overview

Unleash the power of innovation with the R6009ENX by ROHM. As a leader in Power FET technology, ROHM delivers top-quality products that exceed expectations. This N-CHANNEL FET in a RECTANGULAR package offers unmatched performance for SWITCHING applications. With a built-in diode and a 600V breakdown voltage, this transistor ensures reliable operation. Experience the benefits of enhanced efficiency and superior reliability with the R6009ENX. Elevate your projects with ROHM's cutting-edge technology and unlock new possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher efficiency compared to P-channel FETs, making them suitable for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse voltage polarity, enhancing the functionality of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in circuits that require rapid on/off switching.

Minimum DS Breakdown Voltage: 600 V

High breakdown voltage allows for use in high voltage applications, providing robust performance under demanding conditions.

Maximum Pulsed Drain Current (IDM): 18 A

The high pulsed drain current rating enables the transistor to handle short-term current spikes without damage, increasing its versatility.

Avalanche Energy Rating (EAS): 153 mJ

A high avalanche energy rating indicates the transistor's ability to withstand energy spikes and transient events, making it suitable for rugged environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making the transistor a dependable choice for various applications.

Maximum Drain Current (ID): 9 A

The high drain current rating allows for the transistor to handle continuous current flow, ensuring reliable operation in power circuits.

Maximum Drain-Source On Resistance: 0.535 ohm

Low on-resistance minimizes power loss and heat generation, improving the efficiency and thermal performance of the transistor.

Technical Specifications

Power Field Effect Transistors (FET) R6009ENX attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

153 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.535 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

18 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

R6009ENX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.