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RCX511N25

ROHM

RCX511N25 by ROHM

ROHM's RCX511N25 is a N-CHANNEL FET with 250V DS breakdown voltage and 51A max drain current. Ideal for switching applications, it features a built-in diode, 0.065 ohm max on resistance, and 204A pulsed drain current. Suitable for enhancement mode operation in various electronic devices.

Median Price

$4.290

Lifecycle Status

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1k+

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Chip1Stop

Japan . 245 parts In-Stock

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$4.140

100+ parts

$1.880

1k+ parts

$1.590

10k+ parts

$1.500

245

$4.140

$1.880

$1.590

$1.500

DigiKey

USA . 324 parts In-Stock

1+ parts

$4.440

100+ parts

$2.058

1k+ parts

$1.571

10k+ parts

$1.424

324

$4.440

$2.058

$1.571

$1.424

Mouser Electronics

USA . 298 parts In-Stock

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$4.440

100+ parts

$2.060

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$1.630

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298

$4.440

$2.060

$1.630

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Verical

USA . 500 parts In-Stock

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$2.863

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$2.863

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Vyrian

USA . 7,576 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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ACDS - Activité Composants Distribution Service

France . 224 parts In-Stock

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Ampacity Inc.

Singapore . 353 parts In-Stock

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$2.240

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353

$2.240

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CoreStaff

Japan . 500 parts In-Stock

1+ parts

$4.412

100+ parts

$1.691

1k+ parts

$1.651

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500

$4.412

$1.691

$1.651

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Microchip USA

USA . 8,247 parts In-Stock

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$20.605

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Argo Parts USA

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Aranea Global

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

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Overview

Experience the power and efficiency of the RCX511N25 by ROHM, a top-quality Power Field Effect Transistor that delivers exceptional performance in switching applications. Manufactured with precision and expertise, this N-CHANNEL FET offers reliable operation and enhanced durability. Whether you're looking to optimize your power management system or streamline your circuit design, the RCX511N25 provides the value, benefits, and advantages you need to take your projects to the next level. Trust ROHM for excellence in semiconductor technology and elevate your applications with the RCX511N25.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and resistant to corrosion, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity compared to P-channel transistors, allowing for better performance in switching applications.

Minimum DS Breakdown Voltage: 250 V

The high breakdown voltage allows the transistor to handle high voltages, making it reliable and durable in demanding switching applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have lower on-resistance and faster switching speeds, providing efficient operation in various switching applications.

Maximum Pulsed Drain Current (IDM): 204 A

The high pulsed drain current capability ensures the transistor can handle large current spikes without getting damaged, making it suitable for high-power applications.

Avalanche Energy Rating (EAS): 197.9 mJ

The high avalanche energy rating indicates the transistor's ability to withstand voltage spikes, ensuring reliability in rugged conditions.

Maximum Drain Current (ID): 51 A

The high drain current rating allows the transistor to handle large continuous currents, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.065 ohm

The low on-resistance results in minimal power loss and heat generation, improving efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) RCX511N25 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

197.9 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

51 A

Maximum Drain-Source On Resistance:

.065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

204 A

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RCX511N25 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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