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RJ1G08CGNTLL

ROHM

RJ1G08CGNTLL by ROHM

ROHM RJ1G08CGNTLL is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM, 0.0056 ohm RDS(on), and 35mJ EAS rating. The transistor is in ENHANCEMENT MODE, has GULL WING terminals, and comes in a SMALL OUTLINE package style.

Median Price

$1.122

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Verical

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$1.122

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Bristol Electronics

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$1.123

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$0.679

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936

$1.812

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Dan-Mar Components

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CoreStaff

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$0.645

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USA . 33,803 parts In-Stock

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Overview

Unleash the power of innovation with the RJ1G08CGNTLL by ROHM. This top-notch Power Field Effect Transistor (FET) offers unparalleled quality and reliability, backed by ROHM's exceptional reputation in the industry. Perfect for switching applications, this N-CHANNEL transistor boasts a single configuration with a built-in diode for added convenience. With a maximum drain current of 80A and a minimum DS breakdown voltage of 40V, this transistor delivers outstanding performance in a compact, surface-mount package. Elevate your projects with the RJ1G08CGNTLL and experience the superior value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this FET can handle high voltages without damage, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 160 A

Capable of handling high current loads in short pulses, making it ideal for applications that require high power handling capabilities.

Avalanche Energy Rating (EAS): 35 mJ

Can withstand energy spikes and surges, ensuring reliable performance in harsh operating conditions.

Maximum Drain Current (ID): 80 A

With a high drain current rating, this FET can handle large continuous currents, suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.0056 ohm

Low on-resistance results in minimal power loss and higher efficiency, making the FET suitable for high-frequency switching applications.

Technical Specifications

Power Field Effect Transistors (FET) RJ1G08CGNTLL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from ROHM

Specs

Avalanche Energy Rating (EAS):

35 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

80 A

Maximum Drain-Source On Resistance:

.0056 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

160 A

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

RJ1G08CGNTLL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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