Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPW65R190C7XKSA1
Infineon Technologies
IPW65R190C7XKSA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 49A and EAS of 57mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.19 ohm RDS(on) and can handle up to 72W power dissipation at temperatures ranging from -55 to 150°C.
57 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
650 V
13 A
.19 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
72 W
49 A
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPZ65R065C7XKSA1
IPZ65R065C7XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 145A max pulsed drain current and 0.065 ohm max drain-source resistance. This MOSFET operates in enhancement mode, with a temperature range of -55 to 150 °C.
171 mJ
33 A
.065 ohm
R-PSFM-T4
4
171 W
145 A
IPZ65R095C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 128 W; Avalanche Energy Rating (EAS): 118 mJ; Minimum DS Breakdown Voltage: 650 V;
118 mJ
24 A
.095 ohm
128 W
100 A
SPI08N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .6 ohm; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
AVALANCHE RATED
230 mJ
500 V
7.6 A
.6 ohm
TO-262AA
R-PSIP-T3
IN-LINE
NOT SPECIFIED
22.8 A
SPI11N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; JESD-30 Code: R-PSIP-T3; Terminal Form: THROUGH-HOLE;
340 mJ
11 A
.38 ohm
SPI12N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JESD-30 Code: R-PSIP-T3; Additional Features: AVALANCHE RATED;
11.6 A
34.8 A
SPI15N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 15 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Pulsed Drain Current (IDM): 45 A;
460 mJ
15 A
.28 ohm
45 A
SPI20N60C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Terminals: 3;
690 mJ
600 V
20.7 A
62.1 A
SPI20N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 650 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPI21N50C3XKSA1
Infineon's SPI21N50C3XKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring 63A IDM and 0.19 ohm RDS(on), it operates in enhancement mode with 690mJ EAS rating. The PLASTIC/EPOXY package style with IN-LINE shape and THROUGH-HOLE terminals make it suitable for various power electronics designs.
21 A
63 A
SPP02N60C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AVALANCHE RATED, HIGH RELIABILITY
50 mJ
1.8 A
3 ohm
TO-220AB
5.4 A
SPP03N60S5XKSA1
SPP03N60S5XKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 3.2A ID. Ideal for applications requiring high power efficiency, such as motor control systems or power supplies due to its low on-resistance of 1.4 ohm and max pulsed drain current of 5.7A.
100 mJ
3.2 A
1.4 ohm
5.7 A
SPP04N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Additional Features: AVALANCHE RATED; JESD-30 Code: R-PSFM-T3;
130 mJ
4.5 A
.95 ohm
13.5 A
SPP07N60S5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
7.3 A
14.6 A
MATTE TIN
SPP07N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Additional Features: AVALANCHE RATED;
21.9 A
SPP11N60C3XKSA1
SPP11N60C3XKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 33A IDM. Widely used in power applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 125W.
30 pF
SMALL OUTLINE
125 W
79 ns
SPP11N60CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; Package Shape: RECTANGULAR; No. of Terminals: 3;
.44 ohm
28 A
SPP11N60S5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; Minimum DS Breakdown Voltage: 600 V; No. of Elements: 1;
22 A
SPP11N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3; Minimum DS Breakdown Voltage: 650 V;
SPP12N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SPP15N60CFDXKSA1
SPP15N60CFDXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max IDM of 33A and an EAS of 460mJ, making it ideal for SWITCHING applications. This SINGLE transistor with BUILT-IN DIODE operates in ENHANCEMENT MODE and has a 0.33 ohm Drain-Source On Resistance.
13.4 A
.33 ohm
SPP16N50C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; JEDEC-95 Code: TO-220AB; Additional Features: AVALANCHE RATED;
16 A
48 A
SPP20N60CFDXKSA1
SPP20N60CFDXKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features 52A IDM and 0.22 ohm RDS(on), suitable for power applications requiring high current handling and low on-resistance. Ideal for use in power supplies, motor control, and industrial equipment due to its robust design and high energy rating of 690mJ.
.22 ohm
52 A
SPP21N50C3XKSA1
SPP21N50C3XKSA1 by Infineon is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it has a max ID of 21A and 0.19 ohm RDS(on). This MOSFET operates in enhancement mode and can handle up to 63A pulsed drain current.
JANSR2N7584T1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Minimum Operating Temperature: -55 Cel; Operating Mode: ENHANCEMENT MODE;
344 mJ
ISOLATED
200 V
.029 ohm
TO-254AA
S-XSFM-P3
UNSPECIFIED
SQUARE
208 W
180 A
Qualified
MIL-19500; RH - 100K Rad(Si)
PIN/PEG
115 ns
165 ns
STF9N65M2
STMicroelectronics
STF9N65M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 20A max pulsed drain current, and operates in enhancement mode. Ideal for high-performance power management in various electronic devices.
105 mJ
5 A
.9 ohm
.9 pF
20 W
20 A
STP16N50M2
STP16N50M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 52A pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
215 mJ
1.35 pF
110 W
STP16N65M2
STP16N65M2 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 650V breakdown voltage and 44A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.36Ω. This robust transistor supports high power dissipation up to 110W.
360 mJ
.36 ohm
1.1 pF
44 A
STP7N65M2
STP7N65M2 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 20A pulsed drain current, and operates efficiently at temperatures up to 150 °C. Ideal for high-voltage power management solutions.
103 mJ
1.15 ohm
.8 pF
60 W
STU9N65M2
STU9N65M2 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 650V breakdown voltage and 20A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.9Ω. This versatile transistor supports high power dissipation up to 60W.
TO-251
IPA028N08N3GXKSA1
Infineon's IPA028N08N3GXKSA1 is a N-CHANNEL FET with 80V DS breakdown voltage, ideal for switching applications. Featuring a max IDM of 352A and 0.0028 ohm RDS(on), it operates in enhancement mode. The transistor, made of silicon MOSFET technology, comes in a rectangular package with through-hole terminals.
1430 mJ
80 V
89 A
.0028 ohm
352 A
IPA65R045C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR; JESD-609 Code: e3;
249 mJ
18 A
.045 ohm
212 A
IPA65R065C7XKSA1
Infineon's IPA65R065C7XKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 145A IDM, 171mJ EAS, and 0.065 ohm RDS(ON). Package style is FLANGE MOUNT with TIN finish, suitable for ENHANCEMENT MODE operation.
19 A
IPA65R125C7XKSA1
Infineon's IPA65R125C7XKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 75A IDM, 89mJ EAS, and 0.125 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
89 mJ
10 A
.125 ohm
75 A
IPA65R225C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
48 mJ
7 A
.225 ohm
41 A
IPI028N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 400 A; No. of Terminals: 3; Minimum DS Breakdown Voltage: 80 V;
400 A
IPI037N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
LOGIC LEVEL COMPATIBLE
165 mJ
60 V
90 A
.0037 ohm
175 Cel
167 W
360 A
FET General Purpose Power
IPI100N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 90 mJ; JESD-30 Code: R-PSIP-T3;
90 mJ
70 A
.01 ohm
280 A
IPI139N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE;
.0139 ohm
IPI50CN10NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE; Package Body Material: PLASTIC/EPOXY;
29 mJ
100 V
.05 ohm
80 A
IPP039N04LGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSFM-T3;
60 mJ
40 V
.0052 ohm
IPP041N04NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 80 A; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
.0041 ohm
IPP054NE8NGHKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
826 mJ
85 V
.0054 ohm
IPP057N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Form: THROUGH-HOLE; Minimum DS Breakdown Voltage: 80 V;
210 mJ
.0057 ohm
150 W
320 A
IPP084N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 50 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
43 mJ
50 A
.0084 ohm
200 A
IPP084N06L3GXKSA1
Infineon Technologies' IPP084N06L3GXKSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 0.0084 ohm RDS(on), and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 79W.
79 W
IPP093N06N3GHKSA1
IPP093N06N3GHKSA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0093 ohm RDS(on), and 200A IDM. Ideal for switching applications due to its single configuration with built-in diode. Utilizes metal-oxide semiconductor technology in a rectangular package shape.
.0093 ohm
IPP100N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 80 V;
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