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STF9N65M2

STMicroelectronics

STF9N65M2 by STMicroelectronics

STF9N65M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 20A max pulsed drain current, and operates in enhancement mode. Ideal for high-performance power management in various electronic devices.

Median Price

$0.785

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 30 parts In-Stock

1+ parts

$0.785

100+ parts

$0.723

1k+ parts

$0.723

10k+ parts

$0.723

30

$0.785

$0.723

$0.723

$0.723

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,203 parts In-Stock

1+ parts

$0.746

100+ parts

-

1k+ parts

-

10k+ parts

-

3,203

$0.746

-

-

-

Vyrian

USA . 4,276 parts In-Stock

1+ parts

-

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-

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-

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4,276

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Anansix

USA . 2,360 parts In-Stock

1+ parts

-

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2,360

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,169 parts In-Stock

1+ parts

$0.536

100+ parts

-

1k+ parts

$0.483

10k+ parts

-

2,169

$0.536

-

$0.483

-

Corphita

USA . 1,749 parts In-Stock

1+ parts

$0.706

100+ parts

-

1k+ parts

-

10k+ parts

-

1,749

$0.706

-

-

-

Component Stockers USA

USA . 36 parts In-Stock

1+ parts

$0.800

100+ parts

-

1k+ parts

-

10k+ parts

-

36

$0.800

-

-

-

MKK Technologies

India . 66 parts In-Stock

1+ parts

$1.009

100+ parts

-

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-

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66

$1.009

-

-

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DigiPath Technology Company

USA . 66 parts In-Stock

1+ parts

$1.009

100+ parts

-

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-

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66

$1.009

-

-

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Microchip USA

USA . 176 parts In-Stock

1+ parts

$10.335

100+ parts

-

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176

$10.335

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AZTECH Wire

Italy . 171 parts In-Stock

1+ parts

$13.110

100+ parts

-

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171

$13.110

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Kepictronics

USA . 26,000 parts In-Stock

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26,000

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Parana Technologies

USA . 1,690 parts In-Stock

1+ parts

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100+ parts

$0.641

1k+ parts

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10k+ parts

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1,690

-

$0.641

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Alle Elektronik GmbH

Germany . 853 parts In-Stock

1+ parts

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853

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Overview

Unlock the potential of your projects with the STF9N65M2 from STMicroelectronics, a trusted leader in power solutions. This high-quality N-channel FET is engineered for optimal performance in switching applications, offering impressive efficiency and reliability. With robust thermal management and an avalanche energy rating that ensures resilience, it's perfect for demanding environments. Elevate your designs with superior functionality and peace of mind—choose STF9N65M2 for unbeatable value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent protection and durability, ensuring long-term reliability in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer lower on-resistance and higher efficiency during operation, making them ideal for power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and adds reliability by protecting against reverse polarity.

Transistor Application: SWITCHING

Designed for switching applications, this FET ensures fast response times and efficient power control.

Minimum DS Breakdown Voltage: 650 V

A high breakdown voltage rating allows this FET to handle high voltage applications safely, increasing system reliability.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it suitable for compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are advantageous for high-current applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures that the FET is off by default, preventing unnecessary power consumption.

Maximum Pulsed Drain Current (IDM): 20 A

The ability to handle pulsed currents up to 20 A allows this FET to accommodate brief surges without risking damage.

Avalanche Energy Rating (EAS): 105 mJ

A high avalanche energy rating indicates resilience against transient voltage spikes, enhancing long-term reliability.

No. of Terminals: 3

Having three terminals simplifies the design while ensuring versatility for diverse applications.

Maximum Power Dissipation (Abs): 20 W

Able to dissipate up to 20 W efficiently, this FET is capable of handling substantial power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting and efficient heat dissipation, critical for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The MOS technology provides high input impedance and low power consumption, making it suitable for modern electronic circuits.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows the FET to function reliably in demanding thermal environments.

Transistor Element Material: SILICON

Silicon is a well-established semiconductor material, providing good performance and cost-effectiveness.

Minimum Operating Temperature: -55 °C

Operating at very low temperatures ensures the FET is suitable for use in extreme conditions, such as aerospace applications.

Maximum Drain Current (ID): 5 A

With a maximum drain current of 5 A, this FET is suitable for applications requiring stable and controlled current flow.

Maximum Drain-Source On Resistance: 0.9 ohm

The low on-resistance minimizes power loss, improving overall efficiency in switching and amplification applications.

Terminal Position: SINGLE

A single terminal position allows for straightforward installation and integration into various circuit designs.

Case Connection: ISOLATED

Isolated case connection helps prevent accidental short circuits, enhancing the safety and reliability of the device.

Maximum Feedback Capacitance (Crss): 0.9 pF

A low feedback capacitance provides fast switching capabilities, making the FET suitable for high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) STF9N65M2 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

105 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

5 A

Maximum Drain-Source On Resistance:

.9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.9 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STF9N65M2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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