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NO Power Field Effect Transistors (FET) 2,212

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IMW120R020M1HXKSA1 by Infineon Technologies

IMW120R020M1HXKSA1

Infineon Technologies

IMW120R020M1HXKSA1 by Infineon is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 213A and EAS of 721mJ. Operating in ENHANCEMENT MODE, this FET has a max ID of 98A and 0.03ohm RDS(on), suitable for high-power systems.

721 mJ

SINGLE WITH BUILT-IN DIODE

1200 V

98 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

23 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

213 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

DMJ70H600HCT by Diodes Incorporated

DMJ70H600HCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .6 ohm; Transistor Element Material: SILICON;

97 mJ

SINGLE WITH BUILT-IN DIODE

700 V

8.5 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

104 W

34 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCPF11N65 by Onsemi

FCPF11N65

Onsemi

FCPF11N65 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 33A IDM, 340mJ EAS, and 0.38 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 36W and operates b/w -55 to 150 °C.

340 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

11 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

63 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

33 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

370 ns

285 ns

DMWS120H100SM4 by Diodes Incorporated

DMWS120H100SM4

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Feedback Capacitance (Crss): 4.16 pF; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

1200 V

37.2 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

4.16 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

208 W

87 A

MIL-STD-202

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE