Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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FDU5N60NZTU
Onsemi
FDU5N60NZTU by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 16A IDM and 216mJ EAS. With a max power dissipation of 83W, this transistor operates in ENHANCEMENT MODE and has a -55 to 150 °C temperature range.
216 mJ
SINGLE WITH BUILT-IN DIODE
600 V
4 A
2 ohm
METAL-OXIDE SEMICONDUCTOR
7.5 pF
TO-251AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
83 W
16 A
NO
Matte Tin (Sn) - annealed
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
130 ns
90 ns
FCH165N65S3R0-F155
FCH165N65S3R0-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, 47.5A IDM, and 0.165 ohm RDS(on). Ideal for SWITCHING applications due to its 154W Pdiss, -55 to 150 °C operating temp range, and EAS of 87mJ.
87 mJ
650 V
19 A
.165 ohm
TO-247AB
R-PSFM-T3
FLANGE MOUNT
NOT SPECIFIED
154 W
47.5 A
FCH125N65S3R0-F155
FCH125N65S3R0-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A Max Pulsed Drain Current, 115mJ Avalanche Energy Rating, and 0.125 ohm Max RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 181W and can withstand temperatures from -55 to 150 °C.
115 mJ
24 A
.125 ohm
181 W
60 A
NXH40B120MNQ1SNG
NXH40B120MNQ1SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features 44A max drain current, 156W power dissipation, and operates in enhancement mode. With a max operating temperature of 150 °C and silicon carbide element material, it offers high performance in various industrial settings.
ISOLATED
COMPLEX
1200 V
44 A
19 pF
R-XUFM-X32
32
-40 Cel
UNSPECIFIED
156 W
132 A
UPPER
SILICON CARBIDE
NXH40B120MNQ0SNG
NXH40B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 38A max drain current, and 0.055 ohm RDS(on). Ideal for switching applications, it features common drain configuration with built-in diode and thermistor. Operating in depletion mode, this MOSFET has a max power dissipation of 118W and can withstand temperatures up to 150 °C.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
38 A
.055 ohm
R-XUFM-P22
2
22
DEPLETION MODE
118 W
114 A
PIN/PEG
NXH80B120MNQ0SNG
NXH80B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode and operates in enhancement mode. With a max pulsed drain current of 69A and max power dissipation of 69W, this MOSFET is designed for high-power applications.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
23 A
.11 ohm
R-XUFM-X22
69 W
69 A
NXH027B120MNF2PTG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 134 W; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
84 A
.038 ohm
64 pF
R-XUFM-X23
23
134 W
C3M0060065K
Wolfspeed
C3M0060065K by Wolfspeed is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99A and 0.079 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this transistor operates in ENHANCEMENT MODE with a max power dissipation of 150W at temperatures ranging from -40 to 175 °C.
DRAIN
37 A
.079 ohm
9 pF
TO-247
R-PSFM-T4
4
175 Cel
150 W
99 A
NVH4L060N065SC1
NVH4L060N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features 232A Max Pulsed Drain Current and 269W Max Power Dissipation, suitable for high-power applications in industrial electronics and power supplies.
50.3 A
10.17 pF
269 W
232 A
NTH4L015N065SC1
NTH4L015N065SC1 by Onsemi is a Power FET with 650V DS Breakdown Voltage, 859A IDM, and 753W Max Power Dissipation. Ideal for high-power applications requiring N-CHANNEL configuration in RECTANGULAR package style with SILICON CARBIDE element material.
164 A
39.33 pF
753 W
859 A
NVH4L045N065SC1
NVH4L045N065SC1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 65.5A Drain Current. Ideal for high-power applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 338W, this MOSFET is suitable for various industrial uses.
65.5 A
13.76 pF
338 W
312 A
NVH4L015N065SC1
NVH4L015N065SC1 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage. It has a max IDM of 859A and ID of 164A, making it suitable for high-power applications. With a package style of FLANGE MOUNT, it operates in temperatures ranging from -55 to 175 °C, ideal for power electronics.
260
MATTE TIN
30
CAS120M12BM2
CAS120M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements in series, each with built-in diode, suitable for switching applications. With 0.016 ohm RDS(on) and 480A IDM, it operates in -40 to 150 °C temperature range.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
.016 ohm
43.8 pF
R-XUFM-X7
7
480 A
PSMN2R0-60PSRQ
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 338 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
HIGH RELIABILITY
913 mJ
60 V
120 A
.0022 ohm
835 pF
TO-220AB
1135 A
IEC-60134
247 ns
147 ns
FF6MR12KM1BOSA1
Infineon Technologies
Infineon's FF6MR12KM1BOSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring series connected, center tap configuration and built-in diode elements, it offers 500A IDM and 0.00581 ohm max drain-source resistance. With Silicon Carbide material and UL recognition, this MOSFET operates b/w -40 to 150 °C for high-power requirements.
250 A
.00581 ohm
112 pF
500 A
UL RECOGNIZED
167.9 ns
102.8 ns
FF6MR12KM1PHOSA1
Infineon's FF6MR12KM1PHOSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring series connected, center tap configuration with built-in diode, it has max IDM of 500A and 0.00581 ohm RDS(on). Operating in enhancement mode at -40 to 150 °C, this MOSFET is UL recognized and designed for high-power systems.
NVHL040N65S3
NVHL040N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a Max ID of 65A and 0.04 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with an EAS of 358mJ.
358 mJ
65 A
.04 ohm
417 W
162.5 A
AEC-Q101
IXTP14N60X2
Littelfuse
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
150 mJ
14 A
.25 ohm
20 pF
180 W
18 A
CAB760M12HM3
Wolfspeed's CAB760M12HM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 2 elements with built-in diode and thermistor, max pulsed drain current of 1530A, and 0.00173 ohm max drain-source on resistance. Operates in enhancement mode at -40 to 175°C temperature range.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
.00173 ohm
90 pF
R-XUFM-X9
9
1530 A
MSCSM70VM19C3AG
Microchip Technology
MSCSM70VM19C3AG by Microchip is an N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode and SCR in a series connected configuration. With a max pulsed drain current of 250A and operating temperature up to 150°C, it offers high power dissipation capabilities.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR
700 V
124 A
.019 ohm
29 pF
R-XUFM-X25
25
365 W
DMN68M7SCT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Feedback Capacitance (Crss): 198 pF; Minimum DS Breakdown Voltage: 68 V;
183 mJ
68 V
100 A
.008 ohm
198 pF
125 W
400 A
MIL-STD-202
FCH029N65S3-F155
FCH029N65S3-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 463W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
503 mJ
75 A
.029 ohm
463 W
200 A
SIHFPS43N50K-GE3
Vishay Intertechnology
SIHFPS43N50K-GE3 by Vishay Intertechnology is a N-CHANNEL FET with 500V DS Breakdown Voltage, 190A IDM, and 910mJ EAS. Ideal for SWITCHING applications due to its 0.09 ohm RDS(on), 540W Pdiss, and -55 to 150°C operating range.
910 mJ
500 V
47 A
.09 ohm
120 pF
540 W
190 A
NVH4L050N65S3F
NVH4L050N65S3F by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 145A IDM, and 403W Power Dissipation. Ideal for high-power applications in automotive electronics due to its AEC-Q101 standard compliance and robust design.
830 mJ
58 A
.05 ohm
14 pF
403 W
145 A
NVH040N65S3F
NVH040N65S3F by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 162.5A IDM and 0.04ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures from -55 to 150 °C. Suitable for high-power applications requiring reliable performance.
1009 mJ
446 W
MSC017SMA120J
MSC017SMA120J by Microchip is a N-CHANNEL FET with 1200V DS breakdown voltage, 280A IDM, and 3500mJ EAS. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it offers 0.022 ohm RDS(on) and can handle up to 175°C operating temperature.
3500 mJ
88 A
.022 ohm
12 pF
R-PUFM-X4
278 W
280 A
MSC017SMA120B4
MSC017SMA120B4 by Microchip is a N-CHANNEL FET with 1200V DS breakdown voltage. It has a max drain current of 113A and operates in enhancement mode for switching applications. The transistor features a built-in diode, can handle up to 280A pulsed drain current, and dissipates up to 455W power.
113 A
455 W
NTHL095N65S3H
NTHL095N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 84A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology.
284 mJ
30 A
.095 ohm
208 W
NTHL067N65S3H
NTHL067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration. Operating in ENHANCEMENT MODE, it can handle up to 266W power dissipation.
422 mJ
40 A
.067 ohm
266 W
112 A
NVH4L110N65S3F
NVH4L110N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 69A IDM. Ideal for applications requiring high power dissipation up to 240W, such as automotive systems due to AEC-Q101 standard compliance.
380 mJ
240 W
NTHL125N65S3H
NTHL125N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 67A IDM, and 0.125 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 171W and can handle up to 24A ID.
171 W
67 A
DMT10H9M9SH3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 114 W; JESD-30 Code: R-PSIP-T3; Avalanche Energy Rating (EAS): 181.5 mJ;
181.5 mJ
100 V
.009 ohm
13 pF
TO-251
114 W
336 A
C3M0045065K
C3M0045065K by Wolfspeed is a N-CHANNEL FET with 650V DS breakdown voltage and 132A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.06 ohm max RDS(on), and operates in ENHANCEMENT MODE.
49 A
.06 ohm
8 pF
176 W
C3M0025065K
C3M0025065K by Wolfspeed is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a max IDM of 251A, 0.034 ohm Drain-Source On Resistance, and 326W Power Dissipation. Ideal for SWITCHING applications, this SILICON CARBIDE MOSFET operates in ENHANCEMENT MODE at temperatures ranging from -40 to 175 °C.
97 A
.034 ohm
326 W
251 A
CAB011M12FM3
Wolfspeed's CAB011M12FM3 is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 0.014 ohm RDS(on), and 218A IDM. Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode, and thermistor. Operating in ENHANCEMENT MODE, this FET has a max temp of 150°C and uses SILICON CARBIDE technology.
.014 ohm
30 pF
218 A
SCTWA35N65G2V-4
STMicroelectronics
SCTWA35N65G2V-4 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 0.067 ohm RDS(on), and 240W Pdiss, operating in ENHANCEMENT MODE at -55 to 200°C. The transistor has a RECTANGULAR package with THROUGH-HOLE terminals and METAL-OXIDE SEMICONDUCTOR technology.
45 A
200 Cel
90 A
SCTWA90N65G2V-4
SCTWA90N65G2V-4 by STMicroelectronics is a N-channel power FET with 650V DS breakdown voltage and 220A max pulsed drain current. It is used for switching applications, operating in enhancement mode with a max power dissipation of 565W. The transistor features a silicon carbide element material and metal-oxide semiconductor technology, suitable for high-power requirements in various industries.
119 A
.024 ohm
49 pF
565 W
220 A
CCB021M12FM3
Wolfspeed CCB021M12FM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, 106A IDM, and 0.0279 ohm RDS(on). Ideal for switching applications, it features a bridge configuration with 6 elements, built-in diode and thermistor. Operating in enhancement mode, it uses silicon carbide technology and can withstand temperatures from -40 to 150 °C.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
.0279 ohm
16 pF
6
106 A
IEC-60747-8-4
NTH4LN067N65S3H
NTH4LN067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 266W.
NTH4L067N65S3H
NTH4L067N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 112A IDM, and 0.067 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 266W. The transistor features an avalanche energy rating of 422mJ and can withstand temperatures from -55 to 150 °C.
NTH4LN095N65S3H
NTH4LN095N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 84A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
NTH4LN019N65S3H
NTH4LN019N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 328A IDM, and 0.0193 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE, METAL-OXIDE SEMICONDUCTOR tech, and -55 to 150 °C operating temp range.
1421 mJ
.0193 ohm
5 W
328 A
CAB530M12BM3
Wolfspeed's CAB530M12BM3 is a N-CHANNEL FET with 1200V DS breakdown voltage, 1060A IDM, and 0.00355 ohm RDS. Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements and built-in diode. Operating in enhancement mode, this FET has a max operating temperature of 150°C and min of -40°C.
.00355 ohm
84 pF
1060 A
TK35A65W5,S5X
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
614 mJ
35 A
50 W
140 A
TK32E12N1,S1X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 98 W; No. of Terminals: 3; Avalanche Energy Rating (EAS): 48 mJ;
48 mJ
120 V
32 A
.0138 ohm
98 W
110 A
C3M0075120D-A
C3M0075120D-A by Wolfspeed is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 80A and 0.09 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this SILICON CARBIDE transistor has a max temp of 175 °C and package style FLANGE MOUNT.
2 pF
136 W
80 A
FS03MR12A6MA1LB
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Transistor Element Material: SILICON CARBIDE; Transistor Application: SWITCHING; No. of Terminals: 39;
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
.0037 ohm
170 pF
R-XUFM-X39
39
800 A
NXH010P120MNF1PTNG
NXH010P120MNF1PTNG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 342A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features SERIES CONNECTED configuration with METAL-OXIDE SEMICONDUCTOR technology. Operating from -40 to 175 °C, this RECTANGULAR package has 18 terminals and a max power dissipation of 250W.
39 pF
R-XUFM-X18
18
250 W
342 A
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