Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SCT3160KLHRC11
ROHM
ROHM's SCT3160KLHRC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 17A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 103W, this transistor is designed for high-performance requirements in automotive and industrial sectors.
SINGLE WITH BUILT-IN DIODE
1200 V
17 A
.208 ohm
METAL-OXIDE SEMICONDUCTOR
18 pF
TO-247
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
265
N-CHANNEL
103 W
42 A
AEC-Q101
NO
TIN
THROUGH-HOLE
SINGLE
10
SWITCHING
SILICON CARBIDE
NTH4L080N120SC1
Onsemi
NTH4L080N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, ideal for switching applications. It features 125A IDM, 171mJ EAS, and 0.11 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 175°C, it offers high performance in various industrial settings.
HIGH RELIABILITY
171 mJ
29 A
.11 ohm
10 pF
R-PSFM-T4
4
-55 Cel
NOT SPECIFIED
170 W
125 A
Matte Tin (Sn) - annealed
54 ns
28 ns
FCH041N65EFLN4
FCH041N65EFLN4 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 228A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 595W, this transistor has a 0.041 ohm Drain-Source On Resistance and can handle up to 76A ID.
2025 mJ
650 V
76 A
.041 ohm
35 pF
150 Cel
595 W
228 A
SILICON
394 ns
180 ns
FCHD040N65S3-F155
FCHD040N65S3-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A Pulsed Drain Current. Ideal for SWITCHING applications, it features a 0.04 ohm Drain-Source On Resistance, 417W Power Dissipation, and operates in the -55 to 150 °C temperature range.
358 mJ
65 A
.04 ohm
TO-247AD
417 W
162.5 A
MATTE TIN
NTHL033N65S3HF
NTHL033N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, 175A IDM, and 0.033 ohm RDS(on). Ideal for switching applications, it operates in Enhancement Mode with a max power dissipation of 500W. The N-CHANNEL transistor has a rectangular package shape and can handle up to 70A drain current.
1250 mJ
70 A
.033 ohm
500 W
175 A
NTHL040N65S3HF
NTHL040N65S3HF by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 162.5A IDM, and 0.04 ohm RDS(on). Ideal for SWITCHING applications due to its 446W Pdiss, -55 to 150 °C operating temp range, and EAS of 1009 mJ.
1009 mJ
446 W
NTHL080N120SC1
NTHL080N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 132A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 178W. The transistor features an N-CHANNEL configuration in a RECTANGULAR package with METAL-OXIDE SEMICONDUCTOR technology.
31 A
6.5 pF
178 W
132 A
NVHL072N65S3
NVHL072N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, making it suitable for high-power operations. With an ID of 44A and 0.072 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
214 mJ
44 A
.072 ohm
312 W
110 A
NVHL082N65S3F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
510 mJ
DRAIN
40 A
.082 ohm
313 W
100 A
STWA40N60M2
STMicroelectronics
STWA40N60M2 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 136A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for high-power circuits with robust performance.
500 mJ
600 V
34 A
.088 ohm
2.4 pF
250 W
136 A
SCTW40N120G2VAG
SCTW40N120G2VAG by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. It has a max IDM of 100A and 0.105 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 290W.
33 A
.105 ohm
15 pF
200 Cel
290 W
NTH4L027N65S3F
NTH4L027N65S3F by Onsemi is a Power FET with 650V DS Breakdown Voltage, 187.5A IDM, and 0.0274 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 595W and operates b/w -55 to 150 °C.
1610 mJ
75 A
.0274 ohm
187.5 A
SCT3080ARC14
ROHM's SCT3080ARC14 is a N-CHANNEL FET with 650V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a 0.104 ohm on-resistance and 75A pulsed drain current. The transistor has a single configuration with built-in diode, through-hole terminals, and operates in enhancement mode.
30 A
.104 ohm
DMJ65H650SCTI
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Maximum Drain Current (ID): 10 A; No. of Elements: 1;
67.5 mJ
ISOLATED
10 A
.6 ohm
TO-220AB
260
31 W
18 A
DMT6009LJ3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V;
39.8 mJ
60 V
74.5 A
.01 ohm
41 pF
TO-251
R-PSIP-T3
IN-LINE
2.9 W
83.3 W
280 A
NTHL020N090SC1
NTHL020N090SC1 by Onsemi is a Power FET with 900V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 472A and EAS of 264mJ, operating in Enhancement Mode. With a max ID of 118A and RDS(on) of 0.028 ohm, it offers high power dissipation up to 503W in a rectangular package style.
264 mJ
900 V
118 A
.028 ohm
24 pF
503 W
472 A
NVHL020N090SC1
NVHL020N090SC1 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 472A and EAS of 264mJ, making it suitable for high-power operations. With an Abs ID of 118A and 0.028 ohm RDS(on), this MOSFET offers efficient performance in various industrial settings.
30
2SK3798(STA4,Q,M)
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Pulsed Drain Current (IDM): 12 A;
345 mJ
4 A
3.5 ohm
40 W
12 A
TK090A65Z,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Maximum Pulsed Drain Current (IDM): 120 A; JESD-30 Code: R-PSFM-T3;
265 mJ
.09 ohm
2 pF
45 W
120 A
TK25A20D,S5X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
118 mJ
200 V
25 A
.07 ohm
21 pF
TK380A65Y,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Pulsed Drain Current (IDM): 38.8 A; Maximum Operating Temperature: 150 Cel;
96 mJ
9.7 A
.38 ohm
2.5 pF
30 W
38.8 A
TK5A90E,S4X
Toshiba's TK5A90E,S4X is a N-CHANNEL FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13.5A IDM and 202mJ EAS, ensuring efficient power handling. With a max operating temperature of 150°C and 40W power dissipation, it offers reliable performance in various environments.
202 mJ
4.5 A
3.1 ohm
8 pF
13.5 A
TK7A80W,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
310 mJ
800 V
6.5 A
.95 ohm
1.2 pF
35 W
26 A
STP20N60M2-EP
STP20N60M2-EP by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 52A max pulsed drain current, and operates from -55 °C to 150 °C. Ideal for power management in various electronic devices.
138 mJ
13 A
.278 ohm
110 W
52 A
IPA65R190CFDXKSA2
Infineon Technologies
Infineon's IPA65R190CFDXKSA2 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Operating in enhancement mode, it has a max power dissipation of 34W and can withstand temperatures up to 150°C.
484 mJ
17.5 A
.19 ohm
34 W
57.2 A
IPP65R110CFDXKSA2
Infineon's IPP65R110CFDXKSA2 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. Featuring 99.6A IDM and 0.11 ohm RDS(on), it operates in ENHANCEMENT MODE with 277.8W power dissipation, suitable for high-power systems. With a temperature range of -55 to 150 °C, it offers reliable performance in various environments.
845 mJ
31.2 A
277.8 W
99.6 A
IPP65R150CFDXKSA2
IPP65R150CFDXKSA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a 72A Max Pulsed Drain Current and 0.15 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 195.3W power dissipation.
614 mJ
22.4 A
.15 ohm
195.3 W
72 A
IPW65R080CFDFKSA2
Infineon's IPW65R080CFDFKSA2 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 137A IDM, 1160mJ EAS, and 0.08 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it suitable for high-power systems.
1160 mJ
43.3 A
.08 ohm
391 W
137 A
Tin (Sn)
DF11MR12W1M1B11BPSA1
Infineon's DF11MR12W1M1B11BPSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 100A IDM, and operates in enhancement mode. Ideal for high-power applications requiring complex configurations and isolated case connections.
COMPLEX
R-XUFM-P21
2
21
-40 Cel
UNSPECIFIED
PIN/PEG
UPPER
FCP11N60N-F102
FCP11N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 32.4A and EAS of 201.7mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.299 ohm RDS(on) and can handle up to 94W power dissipation at temperatures ranging from -55 to 150 °C.
201.7 mJ
10.8 A
.299 ohm
5 pF
94 W
32.4 A
124 ns
65.4 ns
FCP16N60N-F102
FCP16N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 48A and EAS of 355mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.199 ohm RDS(on), making it ideal for high-power requirements up to 134.4W at temperatures ranging from -55 to 150 °C.
355 mJ
16 A
.199 ohm
134.4 W
48 A
181 ns
82.6 ns
FCP22N60N-F102
FCP22N60N-F102 by Onsemi is a Power FET with 600V DS Breakdown Voltage, 66A IDM, and 0.165 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features single configuration with built-in diode, operating temperature range of -55 to 150 °C.
672 mJ
22 A
.165 ohm
205 W
66 A
FCP9N60N-F102
FCP9N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 27A IDM. Ideal for SWITCHING applications, it features a built-in diode, 135mJ EAS rating, and 0.385 ohm RDS(on).
135 mJ
9 A
.385 ohm
27 A
114.2 ns
62.8 ns
FDP032N08-F102
FDP032N08-F102 by Onsemi is a N-CHANNEL Power FET with 75V DS Breakdown Voltage and 940A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 375W, this transistor has a 0.0032 ohm Drain-Source On Resistance.
1995 mJ
75 V
235 A
.0032 ohm
800 pF
375 W
940 A
932 ns
862 ns
FDP038AN06A0-F102
FDP038AN06A0-F102 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 17A Drain Current. Ideal for SWITCHING applications, it features a 175°C Max Operating Temp, 0.0038 ohm RDS(on), and 625 mJ Avalanche Energy Rating.
625 mJ
.0038 ohm
310 W
115 ns
175 ns
FF8MR12W2M1B11BOMA1
Infineon's FF8MR12W2M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features series connected, center tap configuration with 2 elements, built-in diode and thermistor. With max pulsed drain current of 300A, this MOSFET operates in enhancement mode at temperatures ranging from -40 to 150°C.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
300 A
IPP60R105CFD7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 106 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (Abs) (ID): 21 A;
93 mJ
21 A
106 W
79 A
IPS65R1K0CEAKMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-251; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 7.2 A;
50 mJ
7.2 A
1 ohm
IPW80R290C3AFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; JESD-30 Code: R-PSFM-T3; Maximum Operating Temperature: 150 Cel;
670 mJ
.29 ohm
227 W
51 A
FF45MR12W1M1B11BOMA1
Infineon's FF45MR12W1M1B11BOMA1 is a N-Channel FET with 1200V DS Breakdown Voltage, 5.55V VCEsat, and 0.045ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with built-in diode and thermistor. Operating in enhancement mode, this FET has a max pulsed drain current of 50A and can withstand temperatures from -40 to 150°C.
.045 ohm
14 pF
20 V
R-XUFM-X10
N-Channel
50 A
55300 ns
14100 ns
5.55 V
FF6MR12W2M1B11BOMA1
Infineon's FF6MR12W2M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 400A IDM, and 0.00563 ohm RDS(on). Ideal for high-power switching applications due to its series connected configuration, built-in diode, and thermistor. Operating in enhancement mode with fast turn-on/off times of 39.1ns and 92.6ns respectively.
200 A
.00563 ohm
112 pF
400 A
UL RECOGNIZED
92.6 ns
39.1 ns
IPA95R1K2P7XKSA1
IPA95R1K2P7XKSA1 by Infineon Technologies is a N-CHANNEL FET with 950V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 16A and an avalanche energy rating of 11mJ. With a package style of FLANGE MOUNT and operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.
11 mJ
950 V
6 A
1.2 ohm
27 W
NTH4L020N120SC1
NTH4L020N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 408A IDM, and 264mJ EAS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON CARBIDE element material, suitable for high-power requirements.
102 A
510 W
408 A
86 ns
69 ns
NVHL060N090SC1
NVHL060N090SC1 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 184A and EAS of 162mJ, operating in ENHANCEMENT MODE. With a package style of FLANGE MOUNT and SILICON CARBIDE element material, it offers high performance in various power electronics systems.
162 mJ
46 A
.084 ohm
11 pF
221 W
184 A
94 ns
106 ns
SCT3022KLGC11
ROHM SCT3022KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage. Ideal for switching applications, it has a max IDM of 237A and ID of 95A. With a package style of FLANGE MOUNT, it operates in enhancement mode at up to 175°C.
95 A
.0286 ohm
427 W
237 A
SCT3105KLGC11
ROHM's SCT3105KLGC11 is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 24A Drain Current, 0.137 ohm On Resistance, and 175°C Operating Temperature.
24 A
.137 ohm
134 W
60 A
FDP2D9N12C
FDP2D9N12C by Onsemi is a N-CHANNEL Power FET with 120V DS Breakdown Voltage and 18A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.005 ohm On Resistance, and can handle up to 333W power dissipation.
120 V
.005 ohm
333 W
DMT4003SCT
DMT4003SCT by Diodes Inc. is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 350A and an avalanche energy rating of 215mJ. With a max power dissipation of 156W, this MOSFET operates in enhancement mode from -55 to 150°C.
215 mJ
40 V
205 A
.003 ohm
21.4 pF
156 W
350 A
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