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FF45MR12W1M1B11BOMA1

Infineon Technologies

FF45MR12W1M1B11BOMA1 by Infineon Technologies

Infineon's FF45MR12W1M1B11BOMA1 is a N-Channel FET with 1200V DS Breakdown Voltage, 5.55V VCEsat, and 0.045ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with built-in diode and thermistor. Operating in enhancement mode, this FET has a max pulsed drain current of 50A and can withstand temperatures from -40 to 150°C.

Median Price

$51.430

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 32 parts In-Stock

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-

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$51.430

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$46.020

10k+ parts

$43.310

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$51.430

$46.020

$43.310

DigiKey

USA . 32 parts In-Stock

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32

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Digiode

USA . 427 parts In-Stock

1+ parts

$54.416

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427

$54.416

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TME

Poland . 1 parts In-Stock

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$60.650

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1

$60.650

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Nova Conductors

Japan . 200 parts In-Stock

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$63.835

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$63.835

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Vyrian

USA . 3,351 parts In-Stock

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DigiKey Marketplace

USA . 38 parts In-Stock

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Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.345

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76

$0.345

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Modulus Dynamics

Lithuania . 10,236 parts In-Stock

1+ parts

$0.887

100+ parts

$0.852

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$0.816

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10,236

$0.887

$0.852

$0.816

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Aztec Data Supply Inc.

USA . 117 parts In-Stock

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$1.610

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$1.610

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AZTECH Wire

Italy . 450 parts In-Stock

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$11.682

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$11.682

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Ampacity Inc.

Singapore . 32 parts In-Stock

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$48.690

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$48.690

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Semicontronic

India . 32 parts In-Stock

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$48.690

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$47.473

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$47.229

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$48.690

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Corphita

USA . 701 parts In-Stock

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$51.552

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Component Stockers USA

USA . 36 parts In-Stock

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$59.150

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Microchip USA

USA . 225 parts In-Stock

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$151.754

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Argo Parts USA

USA . 3,445 parts In-Stock

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3,445

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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iodParts Technologies Inc.

India . 150 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$62.558

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$60.643

10k+ parts

$59.366

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$62.558

$60.643

$59.366

Overview

Discover the power and efficiency of the FF45MR12W1M1B11BOMA1 by Infineon Technologies, a high-quality N-channel power field effect transistor designed for switching applications. With a maximum VCEsat of 5.55V and a minimum DS breakdown voltage of 1200V, this transistor offers top-of-the-line performance. Its series-connected, center tap configuration with built-in diode and thermistor ensures reliable operation. Whether you need to boost efficiency or enhance system performance, this transistor is the ideal choice. Trust in Infineon Technologies for superior quality and cutting-edge technology that delivers real value to your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-Channel

N-Channel FETs are known for their high efficiency and fast switching speeds, making them suitable for a variety of applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

This configuration allows for increased power handling capabilities and better thermal management, making the product reliable and durable.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in a variety of scenarios.

Maximum VCEsat: 5.55 V

Low VCEsat minimizes power loss and improves overall efficiency of the device.

Minimum DS Breakdown Voltage: 1200 V

High breakdown voltage ensures the FET can handle high voltage applications without risk of damage.

Package Shape: RECTANGULAR

Rectangular package shape provides convenient mounting and installation options.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easy control of the device and are ideal for switching applications.

Maximum Pulsed Drain Current (IDM): 50 A

High pulsed drain current capability allows the FET to handle spikes in current without issue.

Nominal Turn Off Time (toff): 55300 ns

Fast turn off time ensures quick response and efficient operation of the FET.

No. of Terminals: 10

Having 10 terminals provides flexibility in connecting the FET to other components in the circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure and stable mounting options.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high switching speeds and low on-resistance for improved performance.

Maximum Operating Temperature: 150 °C

High operating temperature capability allows the FET to be used in demanding environments.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliability and performance in electronic devices.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures the FET can operate in both extreme cold and hot conditions.

Maximum Gate-Emitter Threshold Voltage: 20 V

High gate-emitter threshold voltage provides better control over the FET's switching characteristics.

Maximum Drain-Source On Resistance: 0.045 ohm

Low on-resistance minimizes power loss and heat generation in the FET.

Terminal Position: UPPER

Upper terminal position may offer easier connectivity and routing in certain circuit layouts.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical interference and improves overall reliability.

Nominal Turn On Time (ton): 14100 ns

Fast turn on time ensures quick response and efficient operation of the FET.

Maximum Feedback Capacitance (Crss): 14 pF

Low feedback capacitance helps reduce the risk of oscillations and improves stability in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) FF45MR12W1M1B11BOMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

14 pF

Maximum Gate-Emitter Threshold Voltage:

20 V

JESD-30 Code:

R-XUFM-X10

No. of Elements:

2

No. of Terminals:

10

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

50 A

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

55300 ns

Nominal Turn On Time (ton):

14100 ns

Maximum VCEsat:

5.55 V

Trade Compliance

FF45MR12W1M1B11BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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