Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPU60R1K0CEBKMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Maximum Pulsed Drain Current (IDM): 12 A; JESD-30 Code: R-PSIP-T3;
46 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
6.8 A
1 ohm
METAL-OXIDE SEMICONDUCTOR
TO-251
R-PSIP-T3
1
3
ENHANCEMENT MODE
150 Cel
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
NOT SPECIFIED
N-CHANNEL
61 W
12 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPU60R1K5CEBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; Maximum Pulsed Drain Current (IDM): 8 A; Minimum DS Breakdown Voltage: 600 V;
26 mJ
5 A
1.5 ohm
49 W
8 A
DF11MR12W1M1B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 2; Minimum DS Breakdown Voltage: 1200 V; Package Body Material: UNSPECIFIED;
ISOLATED
COMPLEX
1200 V
R-XUFM-P21
2
21
UNSPECIFIED
FLANGE MOUNT
100 A
PIN/PEG
UPPER
DF23MR12W1M1B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
30 A
R-XUFM-X21
50 A
FF11MR12W1M1B11BOMA1
Infineon's FF11MR12W1M1B11BOMA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 200A IDM, and -40°C min. operating temp. Ideal for switching applications, it features series connected elements with built-in diode and thermistor in a rectangular package style.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X18
18
200 A
IPI70R950CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 50 mJ; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN;
50 mJ
700 V
.95 ohm
TO-262AA
e3
TIN
IPS60R3K4CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JEDEC-95 Code: TO-251; Terminal Form: THROUGH-HOLE;
6 mJ
3.4 ohm
3.9 A
IPU50R2K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; JEDEC-95 Code: TO-251;
34 mJ
500 V
2 ohm
-55 Cel
6.1 A
BUZ73AH3046
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-220AB;
AVALANCHE RATED
120 mJ
200 V
5.5 A
.6 ohm
TO-220AB
R-PSFM-T3
22 A
BUZ73H3046XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 28 A; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
7 A
.4 ohm
28 A
DMJ70H600SH3
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 113 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-251;
67.5 mJ
11 A
260
113 W
MATTE TIN
30
DMN80H2D0SCTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; No. of Terminals: 3; No. of Elements: 1;
60 mJ
800 V
11 pF
41 W
FCPF360N65S3R0L
Onsemi
FCPF360N65S3R0L by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 25A IDM and 40mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 27W and -55 to 150 °C operating temperature range.
40 mJ
650 V
10 A
.36 ohm
27 W
25 A
IPU60R1K0CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Minimum DS Breakdown Voltage: 600 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPU60R1K5CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
FCPF250N65S3R0L
FCPF250N65S3R0L by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 30A IDM, and 0.25 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 31W Power Dissipation and -55 to 150 °C temperature range.
57 mJ
.25 ohm
31 W
FCPF600N60ZL1
FCPF600N60ZL1 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 22.2A IDM, 135mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and turn on/off times of 60ns/116ns.
135 mJ
7.4 A
45 pF
28 W
22.2 A
116 ns
60 ns
FDP4D5N10C
FDP4D5N10C by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 512A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 150W, this transistor has a turn on time of 126ns and turn off time of 90ns.
486 mJ
100 V
128 A
91 A
.0045 ohm
35 pF
175 Cel
2.4 W
150 W
512 A
Matte Tin (Sn) - annealed
90 ns
126 ns
FDPF8D5N10C
FDPF8D5N10C by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 304A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 35W, this transistor has an operating temperature range of -55 to 175 °C.
181 mJ
76 A
.0085 ohm
25 pF
35 W
304 A
38 ns
42 ns
FCP260N65S3
FCP260N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 30A and an Avalanche Energy Rating of 57mJ. Operating in ENHANCEMENT MODE, it has a Max Power Dissipation of 90W and can handle up to 12A Drain Current.
.26 ohm
90 W
STP80NF55-08AG
STMicroelectronics
STP80NF55-08AG by STMicroelectronics is a N-channel power FET with 55V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 300W, this MOSFET has a package style of flange mount and can withstand temperatures up to 175°C.
1000 mJ
55 V
80 A
.008 ohm
300 W
320 A
AEC-Q101
FCP360N65S3R0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
83 W
NTHL040N65S3F
NTHL040N65S3F by Onsemi is a power FET with 650V DS breakdown voltage, 162.5A IDM, and 0.04 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 446W. This N-channel transistor has a rectangular package shape and can handle up to 65A ID.
1009 mJ
65 A
.04 ohm
TO-247
446 W
162.5 A
IRF100P219XKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
464 mJ
195 A
.0017 ohm
TO-247AC
780 A
FPF1C2P5BF07A
FPF1C2P5BF07A by Onsemi is an N-CHANNEL Power FET with 650V DS Breakdown Voltage and 156A IDM. Ideal for POWER CONTROL applications, it features a max power dissipation of 250W, 0.09 ohm RDS(on), and operates b/w -40 to 150 °C.
LOW CONDUCTION LOSS
36 A
.09 ohm
R-XUFM-X24
5
24
250 W
156 A
UL APPROVED
PRESS FIT
POWER CONTROL
AOK42S60L
Alpha & Omega Semiconductor
AOK42S60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 39A ID and 417W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for demanding environments requiring efficient power management.
39 A
417 W
FET General Purpose Power
IPW60R040CFD7XKSA1
IPW60R040CFD7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a max pulsed drain current of 212A and an avalanche energy rating of 249mJ. With a package style of FLANGE MOUNT, it operates in temperatures ranging from -55 to 150 °C.
249 mJ
227 W
212 A
IPW60R055CFD7XKSA1
Infineon's IPW60R055CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 153A max pulsed drain current and 0.055 ohm max on-resistance. With a power dissipation of 178W, it operates in temperatures ranging from -55 to 150°C.
180 mJ
38 A
.055 ohm
178 W
153 A
IPW60R125CFD7XKSA1
Infineon's IPW60R125CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 66A IDM and 0.125 ohm RDS(on), it operates in enhancement mode with 92W power dissipation. Suitable for high-power systems, this transistor has a max operating temperature of 150°C and avalanche energy rating of 78mJ.
78 mJ
18 A
.125 ohm
92 W
66 A
DMC2025UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.4 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: NICKEL PALLADIUM GOLD;
8.5 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
6 A
.035 ohm
77 pF
R-PDSO-N6
e4
6
SQUARE
SMALL OUTLINE
N-CHANNEL AND P-CHANNEL
1.4 W
20 A
MIL-STD-202
NICKEL PALLADIUM GOLD
NO LEAD
DUAL
TK39A60W,S4VX
Toshiba
Toshiba's TK39A60W,S4VX is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Featuring 155A IDM and 0.065 ohm RDS(on), it operates in ENHANCEMENT MODE with 608mJ EAS. The PLASTIC/EPOXY package style with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
608 mJ
38.8 A
.065 ohm
155 A
SCTW90N65G2V
SCTW90N65G2V by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 220A Max Pulsed Drain Current and 390W Max Power Dissipation. Operating in ENHANCEMENT MODE, it has a temperature range of -55 to 200°C.
110 A
200 Cel
390 W
220 A
SILICON CARBIDE
TK34A10N1,S4X
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain-Source On Resistance: .0095 ohm; Package Style (Meter): FLANGE MOUNT;
64 mJ
75 A
.0095 ohm
147 A
STP36N60M6
STP36N60M6 by STMicroelectronics is a Power FET with 600V DS Breakdown Voltage, 102A IDM, and 0.099 ohm RDS(on). It's an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is RECTANGULAR with THROUGH-HOLE terminals, suitable for FLANGE MOUNT installation.
750 mJ
.099 ohm
102 A
IPW60R105CFD7XKSA1
Infineon's IPW60R105CFD7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 79A IDM and 0.105ohm RDS(on), it operates in enhancement mode with 106W power dissipation. Suitable for high-power systems requiring efficient current control.
93 mJ
21 A
.105 ohm
106 W
79 A
NVHL025N65S3
NVHL025N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 187.5A and EAS of 2025mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.025 ohm RDS(on) and can handle up to 595W power dissipation at temperatures ranging from -55 to 150 °C.
2025 mJ
.025 ohm
595 W
187.5 A
AOT14N50FD
AOT14N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 14 A max drain current and 278 W power dissipation. Ideal for high-power applications, it operates at up to 150°C.
14 A
278 W
C2M0080170P
Wolfspeed
C2M0080170P by Wolfspeed is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. It has a max IDM of 80A, 0.125 ohm RDS(on), and is used for SWITCHING applications. The transistor features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package style suitable for FLANGE MOUNTing.
1700 V
40 A
R-PSFM-T4
4
IPP60R600P7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 600 V;
17 mJ
30 W
16 A
R6030ENZ4C13
ROHM
ROHM R6030ENZ4C13 is a N-CHANNEL FET with 600V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 0.13 ohm on-resistance, and 80A pulsed drain current.
636 mJ
.13 ohm
R6047ENZ4C13
ROHM R6047ENZ4C13 is a N-CHANNEL FET with 600V DS breakdown voltage and 47A max drain current. Ideal for switching applications, it features a built-in diode, 0.072 ohm max on resistance, and 141A pulsed drain current.
1135 mJ
47 A
.072 ohm
141 A
R6076KNZ4C13
ROHM R6076KNZ4C13 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, 76A ID, and 0.042 ohm RDS(on). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Suitable for ENHANCEMENT MODE operation in various electronic devices.
1954 mJ
.042 ohm
228 A
STI47N60DM6AG
STI47N60DM6AG from STMicroelectronics is a robust N-channel FET designed for switching applications, featuring a 600V breakdown voltage and 36A max drain current. It offers high power dissipation of 250W and operates efficiently in -55 °C to 150 °C. Ideal for demanding power management tasks.
700 mJ
.08 ohm
137 A
STI18N60M2
STI18N60M2 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 13A max drain current, and built-in diode. Ideal for power management in various electronic circuits, it ensures efficient performance.
13 A
.28 ohm
52 A
DMNH45M7SCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 240 W; Terminal Form: THROUGH-HOLE; Minimum Operating Temperature: -55 Cel;
92 mJ
40 V
.006 ohm
272 pF
240 W
NTP110N65S3HF
NTP110N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 69A and EAS of 380mJ, operating in Enhancement Mode. With a package style of Flange Mount and RDS(on) of 0.11 ohm, it offers high power dissipation up to 240W at temperatures ranging from -55°C to 150°C.
380 mJ
.11 ohm
69 A
NTPF110N65S3HF
NTPF110N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 69A and EAS of 380mJ, operating in enhancement mode. With a package style of Flange Mount and an RDS(on) of 0.11 ohm, it offers efficient performance in various power electronics designs.
SCT3030ALHRC11
ROHM's SCT3030ALHRC11 is a N-CHANNEL FET with 650V DS breakdown voltage and 175A IDM. Ideal for switching applications, it features 0.039 ohm max drain-source resistance and operates in enhancement mode at up to 175°C.
70 A
.039 ohm
42 pF
265
262 W
175 A
10
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