Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CSD18511KCS
Texas Instruments
CSD18511KCS by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 400A IDM, and 0.0042 ohm RDS(on). Suitable for ENHANCEMENT MODE operation with -55 to 175 °C temperature range.
AVALANCHE RATED
156 mJ
DRAIN
SINGLE
40 V
110 A
.0042 ohm
METAL-OXIDE SEMICONDUCTOR
306 pF
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
400 A
NO
MATTE TIN
THROUGH-HOLE
SWITCHING
SILICON
IPA80R450P7XKSA1
Infineon Technologies
Infineon's IPA80R450P7XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, 0.45 ohm RDS(on), and 29A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 29mJ.
29 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
800 V
.45 ohm
29 A
TIN
TK62N60X,S1F
Toshiba
Toshiba's TK62N60X,S1F is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 61.8A Max Drain Current and 0.04 ohm Max RDS(on), making it suitable for high-power ENHANCEMENT MODE operations. With a 247A IDM rating and 698mJ EAS, this transistor offers reliable performance in various power electronics systems.
698 mJ
600 V
61.8 A
.04 ohm
TO-247
NOT SPECIFIED
247 A
IPA65R650CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Minimum DS Breakdown Voltage: 650 V; Maximum Drain-Source On Resistance: .65 ohm;
142 mJ
650 V
10.1 A
.65 ohm
150 Cel
-40 Cel
28 W
18 A
IPP60R099P6XKSA1
Infineon's IPP60R099P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 109A IDM, 796mJ EAS, and 0.099ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 278W and can handle up to 37.9A ID.
796 mJ
37.9 A
.099 ohm
278 W
109 A
IPS60R650CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 82 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
133 mJ
9.9 A
TO-251
R-PSIP-T3
IN-LINE
82 W
19 A
IPS70R1K4CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 53 W; Maximum Pulsed Drain Current (IDM): 8.3 A; JEDEC-95 Code: TO-251;
26 mJ
700 V
5.4 A
1.4 ohm
53 W
8.3 A
IPZ60R017C7XKSA1
IPZ60R017C7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 495A IDM and 0.017 ohm RDS(on). The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 446W and an operating temp range from -55 to 150°C.
582 mJ
.017 ohm
R-PSFM-T4
4
446 W
495 A
IPAW60R190CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Terminal Form: THROUGH-HOLE; Maximum Operating Temperature: 150 Cel;
418 mJ
26.7 A
.19 ohm
34 W
59 A
IPP80N06S209AKSA2
IPP80N06S209AKSA2 by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.0091 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
370 mJ
55 V
80 A
.0091 ohm
320 A
AEC-Q101
IPI50R399CPXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Case Connection: DRAIN; Maximum Drain-Source On Resistance: .399 ohm;
215 mJ
500 V
9 A
.399 ohm
TO-262AA
20 A
TK8A50D(STA4,Q,M)
Toshiba's TK8A50D is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 32A IDM and 165mJ EAS, it operates in ENHANCEMENT MODE with 0.85 ohm RDS(on). The PLASTIC/EPOXY package has RECTANGULAR shape and THROUGH-HOLE terminals for easy mounting.
165 mJ
8 A
.85 ohm
32 A
IPI120N08S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
GREEN
920 mJ
80 V
120 A
.0028 ohm
480 A
DDB2U50N08W1RB23BOMA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-XUFM-X9; Maximum Pulsed Drain Current (IDM): 100 A; Maximum Drain-Source On Resistance: .2 ohm;
COMPLEX
60 A
.2 ohm
R-XUFM-X9
9
UNSPECIFIED
100 A
UPPER
IPA80R1K0CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 5.7 A; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY;
230 mJ
5.7 A
.95 ohm
IPA80R1K4CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 12 A; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 800 V;
170 mJ
3.9 A
12 A
IPA80R310CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Package Style (Meter): FLANGE MOUNT;
670 mJ
16.7 A
.31 ohm
51 A
IPA80R460CEXKSA1
Infineon Technologies' IPA80R460CEXKSA1 is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 33A and an avalanche energy rating of 470mJ. This N-channel transistor is commonly used for switching applications.
470 mJ
10.8 A
.46 ohm
33 A
IPA80R650CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 8 A; Maximum Drain-Source On Resistance: .65 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
340 mJ
24 A
IPI120N06S402AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; JESD-30 Code: R-PSIP-T3;
560 mJ
60 V
IPI60R165CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Terminal Position: SINGLE; Transistor Application: SWITCHING;
522 mJ
21 A
.165 ohm
61 A
IPI60R199CPXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
436 mJ
16 A
.199 ohm
IPI80N06S208AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 320 A; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 450 mJ;
450 mJ
.008 ohm
IPP100N04S2L03AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 40 V; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
810 mJ
.0033 ohm
IPP120N06S402AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 120 A; Terminal Finish: TIN; Case Connection: DRAIN;
IPP45N06S4L08AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; JESD-30 Code: R-PSFM-T3; Moisture Sensitivity Level (MSL): 1;
97 mJ
45 A
.0079 ohm
180 A
IPP80N04S2H4AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Avalanche Energy Rating (EAS): 660 mJ; Package Shape: RECTANGULAR;
660 mJ
.004 ohm
IPP80N06S208AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 80 A; Terminal Form: THROUGH-HOLE;
IPP80N06S2H5AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 55 V; Transistor Element Material: SILICON;
700 mJ
.0055 ohm
IPP80N06S2L06AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
LOGIC LEVEL COMPATIBLE
530 mJ
.0081 ohm
IPP80N06S2L07AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .01 ohm; Minimum DS Breakdown Voltage: 55 V; JESD-30 Code: R-PSFM-T3;
.01 ohm
IPP80N06S2LH5AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
.0065 ohm
IPP80N06S4L05AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JESD-609 Code: e3; Case Connection: DRAIN;
152 mJ
.0048 ohm
IPP80N06S4L07AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 71 mJ; Case Connection: DRAIN; Transistor Element Material: SILICON;
71 mJ
.0064 ohm
IPP90N06S404AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
331 mJ
90 A
360 A
IPP90N06S4L04AKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
.0034 ohm
IPS70R600CEAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
55 mJ
.6 ohm
SPA11N80C3XKSA2
SPA11N80C3XKSA2 by Infineon is a N-CHANNEL FET with 800V DS breakdown voltage, 33A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temperature of 150°C. The transistor features a built-in diode and offers high avalanche energy rating at 470mJ.
11 A
SPP04N80C3XK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Additional Features: AVALANCHE RATED, HIGH VOLTAGE;
AVALANCHE RATED, HIGH VOLTAGE
4 A
1.3 ohm
SPP06N80C3XK
SPP06N80C3XK by Infineon is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 18A pulsed drain current. Operating in enhancement mode, this MOSFET has a max operating temperature of 150°C and 0.9 ohm on-resistance.
6 A
.9 ohm
IPA041N04NGXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
70 mJ
70 A
.0041 ohm
280 A
IPA60R060C7XKSA1
Infineon's IPA60R060C7XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 135A IDM and 0.06 ohm RDS(on), it operates in ENHANCEMENT MODE. The transistor's SILICON element and 159mJ EAS make it suitable for high-power tasks.
159 mJ
.06 ohm
135 A
IPA60R099C7XKSA1
Infineon's IPA60R099C7XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 83A IDM and 0.099 ohm RDS(on), it operates in ENHANCEMENT MODE. With a package style of FLANGE MOUNT, this transistor has an EAS of 97mJ for robust performance.
83 A
IPA60R120C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 600 V; Package Body Material: PLASTIC/EPOXY; Case Connection: ISOLATED;
78 mJ
.12 ohm
66 A
IPA60R180C7XKSA1
Infineon's IPA60R180C7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 45A IDM and 0.18 ohm RDS(on), it operates in enhancement mode with 53mJ EAS rating. The transistor has a single configuration with built-in diode, suitable for isolated case connections in power systems.
53 mJ
.18 ohm
IPA65R1K5CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: 1.5 ohm;
1.5 ohm
IPAN65R650CEXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 18 A;
IPI65R280E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; JEDEC-95 Code: TO-262AA; Package Style (Meter): IN-LINE;
290 mJ
.28 ohm
39 A
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