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TK8A50D(STA4,Q,M)

Toshiba

TK8A50D(STA4,Q,M) by Toshiba

Toshiba's TK8A50D is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 32A IDM and 165mJ EAS, it operates in ENHANCEMENT MODE with 0.85 ohm RDS(on). The PLASTIC/EPOXY package has RECTANGULAR shape and THROUGH-HOLE terminals for easy mounting.

Median Price

$2.370

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DigiKey

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$2.370

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$1.032

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$0.756

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$0.605

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Chip1Stop

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TME

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$2.020

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$0.890

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$0.850

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Ampacity Inc.

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Overview

Upgrade your power systems with the TK8A50D(STA4,Q,M) by Toshiba. As a leading manufacturer in the industry of Power Field Effect Transistors, Toshiba ensures top-notch quality and reliability. This N-CHANNEL transistor with built-in diode is perfect for switching applications, offering a minimum DS Breakdown Voltage of 500V and maximum Drain Current of 8A. With its high performance and durability, this transistor is a game-changer in enhancing your electronic devices' efficiency. Trust Toshiba for unparalleled value and benefits that cater to all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ensuring the transistor is easy to handle and can withstand various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high efficiency and fast switching capabilities, making this transistor suitable for applications where performance is critical.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit designs and offers protection against reverse current, making this transistor a convenient and reliable choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and precise control over the flow of current in a circuit.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this transistor can handle high voltage applications with ease, ensuring reliable operation under demanding conditions.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and placement on circuit boards, enhancing the overall versatility and usability of the transistor.

Terminal Form: THROUGH-HOLE

The through-hole terminals ensure secure and reliable connections, reducing the risk of signal loss or interference in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high efficiency and fast response times, making this transistor suitable for high-performance applications that require quick switching.

Maximum Pulsed Drain Current (IDM): 32 A

The high pulsed drain current rating allows this transistor to handle short-duration high currents, making it suitable for applications that require quick bursts of power.

Avalanche Energy Rating (EAS): 165 mJ

The high avalanche energy rating ensures this transistor can withstand sudden voltage spikes or surges, making it a robust and reliable choice for protection circuits.

No. of Terminals: 3

The 3-terminal configuration simplifies circuit connections and reduces complexity, making it easier to integrate this transistor into a variety of electronic designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and secure mounting, ensuring the transistor remains stable and secure in high-vibration environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low power consumption, making this transistor energy-efficient and suitable for high-speed applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability, ensuring long-term performance and consistent operation in a wide range of conditions.

Maximum Drain Current (ID): 8 A

The high drain current rating allows this transistor to handle continuous currents efficiently, making it suitable for applications that require steady power delivery.

Maximum Drain-Source On Resistance: 0.85 ohm

The low drain-source on resistance minimizes power loss and heat generation, making this transistor efficient and reliable for high-power applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and reduces the risk of wiring errors, making it easier to integrate this transistor into electronic designs.

Case Connection: ISOLATED

The isolated case connection enhances safety and reliability by preventing any unwanted electrical interference or short circuits, ensuring stable operation in various applications.

Technical Specifications

Power Field Effect Transistors (FET) TK8A50D(STA4,Q,M) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Toshiba

Specs

Avalanche Energy Rating (EAS):

165 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.85 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

32 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TK8A50D(STA4,Q,M) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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