Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CSD18511KCS by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 400A IDM, and 0.0042 ohm RDS(on). Suitable for ENHANCEMENT MODE operation with -55 to 175 °C temperature range.
Median Price
$2.230
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1k+
Texas Instruments
1+ parts
$1.181
100+ parts
$0.908
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Mouser Electronics
$0.971
$0.683
DigiKey
$2.390
$1.039
$0.762
$0.610
Digiode
$1.122
Vyrian
Semicontronic
$1.000
$0.975
$0.970
Ampacity Inc.
Corphita
$1.063
Corohmni
Parana Technologies
$1.690
$2.289
ChromeModa Solutions
$1.899
$1.557
IDEA Electronic Components Group
$1.709
A-Z Elektronik GmbH
Native Components
Northwest PG Solutions
DigiPath Technology Company
$1.712
The plastic/epoxy material ensures durability and protection for the FET, making it suitable for various environments and conditions.
The single configuration simplifies the design and implementation of the FET in a circuit, making it easier to integrate.
Designed specifically for switching applications, this FET offers efficient and reliable performance in turning on and off electrical signals.
With a minimum breakdown voltage of 40V, this FET can handle higher voltage levels without damage, ensuring a safe and stable operation.
The high pulsed drain current capability allows the FET to handle sudden spikes in current, making it suitable for high-power applications.
With a maximum operating temperature of 175°C, this FET can withstand high-temperature environments, ensuring reliable performance in various conditions.
Power Field Effect Transistors (FET) CSD18511KCS attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Texas Instruments
Additional Features:
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
CSD18511KCS Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.
President, CEO
Haviv Ilan
Chairman
Richard K. Templeton
Senior VP, CFO
Rafael R. Lizardi
M - Fab
Fabrication
Fab Initiation
1997
USA
South Portland
Wafer Capacity
32,000
D - FAB
1966
Dallas
42,000
D MOS - 6
2002
25,000
D MOS - 5
1995
75,000
Miho - 8
1980
Japan
Inashiki
43,000
S FAB 1
Sherman
91,000
F - FAB
2001
Germany
Freising
37,000
R Fab 1
2010
Richardson
40,000
D HC Line
1999
2,000
JV3
Aizu Wakamatsu
45,000
C - FAB
2007
China
Chengdu
30,000
L - Fab
2015
Lehi
70,000
R - Fab 2
2022
S - FAB 2
2025
S - FAB 3
2028
LL4148
Surge Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
NXP Semiconductors
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
BSS138
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
Rugao Dachang Electronic
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM358M
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
NE555D
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
M24308/2-1F
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
LM555CN
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N2222A
Boca Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Zetex Plc
Sangdest Microelectronics (Nanjing)
Diotec Semiconductor Ag
LM317T
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
FDS8984_F085
FDS8984_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2 ELEMENTS WITH BUILT-IN DIODE, 30A Max Pulsed Drain Current, and 0.023 ohm Max Drain-Source On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
BSZ15DC02KDHXTMA1
Infineon Technologies
Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
IRLML6402TR
International Rectifier
IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.
STP80NF10FP
STP80NF10FP by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 152A IDM and 350mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.015 ohm Drain-Source On Resistance and can handle up to 40W power dissipation.
BSC100N06LS3GATMA1
Infineon's BSC100N06LS3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features a 0.01 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
IRLML0060TRPBF
Infineon's IRLML0060TRPBF is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 11A Max Pulsed Drain Current, and 0.092 ohm Max Drain-Source On Resistance. Operating in -55 to 150 °C range, it comes in small outline package suitable for surface mount technology.
BSP316PH6327XTSA1
BSP316PH6327XTSA1 by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for power applications. It features single configuration with built-in diode, 2.72A max pulsed drain current, and 1.8ohm max drain-source resistance. Suitable for enhancement mode operation in automotive electronics due to AEC-Q101 compliance.
BSP318SH6327
Infineon's BSP318SH6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 10.4A IDM. Ideal for automotive applications due to AEC-Q101 standard compliance, it features 0.15 ohm RDS(ON) and 60mJ EAS rating.
SIR872ADP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR872ADP-T1-GE3 is a N-channel FET with 150V DS breakdown voltage and 100A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.018 ohm max drain-source resistance, and operates in enhancement mode.
AUIRF4905STRL
AUIRF4905STRL by Infineon is a P-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 280A IDM, and 0.02 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 150°C, it's ideal for high-power switching circuits in automotive and industrial electronics.
IRFR540ZTRPBF
IRFR540ZTRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 140A and EAS of 39mJ, operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals offers 0.0285 ohm RDS(ON) and 91W Pd max.
SI4946BEY-T1-E3
Vishay Siliconix
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
IRF7309TRPBF
IRF7309TRPBF by Infineon is a Power FET with N-Channel and P-Channel types, suitable for switching applications. It features 2 elements with built-in diode, a max drain current of 4A, and a min DS breakdown voltage of 30V. With a package style of small outline and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
IRF530A
The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
BSZ160N10NS3GATMA1
Infineon Technologies' BSZ160N10NS3GATMA1 is a power FET with N-channel configuration and a built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
FDMS86101A
FDMS86101A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.008 ohm RDS(on), and 104W Pdiss. Suitable for surface mount with 5 terminals in a RECTANGULAR package style.
NTD20P06LT4G
NTD20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 50A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 54W.
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 by Infineon is a N-CHANNEL FET with 80V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 66W. This MOSFET has a drain-source on resistance of 0.0123 ohm and can handle up to 150°C operating temperature.
FDD5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
BSC067N06LS3GXT
BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.
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DS160PT801ACBR
DS160PT801ACBR by Texas Instruments is a bus controller IC with 339 terminals, operating at -40 to 85°C. It supports PCI bus compatibility with a data transfer rate of 2000 MBps. This CMOS technology device has a thin profile and fine pitch package suitable for industrial applications.
LMR43610MSC3RPERQ1
LMR43610MSC3RPERQ1 by Texas Instruments is a 9-terminal switching regulator with a max output voltage of 32V and max output current of 1A. Ideal for automotive applications, it operates b/w -40 to 150°C, featuring a buck switcher config and PWM control mode at up to 2200kHz frequency.
CC2662R1FTWRGZRQ1
CC2662R1FTWRGZRQ1 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU, 48 MHz clock frequency, and 81920 bytes of RAM. Ideal for industrial applications, it features 8 ADC channels, 32 DMA channels, and peripherals like AES and PWM for efficient system integration.
DRV3255EPAPRQ1
DRV3255EPAPRQ1 by Texas Instruments is a Motion Control IC with 64 terminals, operating at -40 to 150°C. It is an AEC-Q100 compliant automotive-grade IC for Brushless DC Motor control, supporting supply voltages from 5V to 90V and output currents up to 3.5A. The package style includes a flatpack with heat sink/slug, suitable for surface mount applications in automotive systems.
TPS7A4301DGQR
TPS7A4301DGQR by Texas Instruments is an adjustable positive single output LDO regulator with a max output voltage of 14.5V and a dropout voltage of 0.6V. It operates in temperatures ranging from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact spaces.
UCC27284DRCR
UCC27284DRCR by Texas Instruments is a MOSFET gate driver with 2 channels, capable of handling a max output current of 3.5A. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 30µs. This chip carrier package with very thin profile is suitable for high side driver applications requiring fast switching speeds.
DRV8316RRGFR
DRV8316RRGFR by Texas Instruments is a motion control IC with a rectangular package and a terminal form of gull wing. It has a max output current of 8A and can operate at temperatures ranging from -40 to 125°C. This IC is commonly used as a brushless DC motor controller in automotive applications.
CSD18532Q5B
CSD18532Q5B by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm Drain-Source Resistance. Suitable for high-power switching circuits with operating temperatures from -55 to 150 °C.
CSD19536KTT
CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
CSD18543Q3AT
CSD18543Q3AT by Texas Instruments is an N-CHANNEL Power FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 156A Pulsed Drain Current, and 0.0156 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
CSD19536KTTT
CSD19536KTTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 400A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 175°C. With a low on-resistance of 0.0028 ohm, this MOSFET is ideal for high-power switching circuits.
CSD16301Q2
CSD16301Q2 by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 20A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 2.3W. This SMALL OUTLINE transistor has a -55 to 150 °C operating temperature range and 0.034 ohm Drain-Source On Resistance.
CSD18540Q5BT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
CSD18543Q3A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON; Maximum Feedback Capacitance (Crss): 6.2 pF;
CSD18563Q5AT
CSD18563Q5AT by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A IDM and 146mJ EAS, operating in the -55 to 150 °C temperature range. This SINGLE transistor has a 0.0108 ohm Drain-Source Resistance and comes in a SMALL OUTLINE package style.
CSD18504Q5AT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .0098 ohm;
CSD19534Q5AT
CSD19534Q5AT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It is used for switching applications, has a max IDM of 137A and an EAS rating of 55mJ.
CSD18563Q5A
CSD18563Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 96A IDM, and 0.0108 ohm RDS(on). With a max power dissipation of 116W, it operates in temperatures ranging from -55 to 150 °C.
CSD19537Q3T
CSD19537Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 219A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 150°C. This SINGLE configuration transistor has a Surface Mount design with METAL-OXIDE SEMICONDUCTOR technology.
CSD18540Q5B
CSD18540Q5B by Texas Instruments is an N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0033 ohm Drain-Source On Resistance. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 175 °C.
CSD18563Q5A-P
CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
CSD18537NQ5A
CSD18537NQ5A by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 151A.
CSD19534Q5A
CSD19534Q5A by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 137A IDM, and 0.0176 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching circuits in various electronic devices.
CSD18531Q5AT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Additional Features: AVALANCHE RATED;
CSD19537Q3
CSD19537Q3 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 100V DS Breakdown Voltage, 219A Max Pulsed Drain Current, and 0.0166 ohm Max Drain-Source On Resistance. Ideal for high-power switching circuits with an operating temperature range of -55 to 150 °C.
CSD18504Q5A
CSD18504Q5A by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 40V DS Breakdown Voltage, 275A Pulsed Drain Current, and 0.0098 ohm Drain-Source On Resistance. With a max power dissipation of 77W, it operates in temperatures ranging from -55 to 150 °C.
CSD17308Q3T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 30 V;
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