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BSC123N08NS3GATMA1

Infineon Technologies

BSC123N08NS3GATMA1 by Infineon Technologies

BSC123N08NS3GATMA1 by Infineon is a N-CHANNEL FET with 80V DS breakdown voltage and 220A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 66W. This MOSFET has a drain-source on resistance of 0.0123 ohm and can handle up to 150°C operating temperature.

Median Price

$1.120

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 83,335 parts In-Stock

1+ parts

$1.120

100+ parts

$0.606

1k+ parts

$0.426

10k+ parts

$0.425

83,335

$1.120

$0.606

$0.426

$0.425

Chip1Stop

Japan . 39,305 parts In-Stock

1+ parts

$1.210

100+ parts

$0.894

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39,305

$1.210

$0.894

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Newark

USA . 10,386 parts In-Stock

1+ parts

$1.910

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$0.888

1k+ parts

$0.637

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$0.594

10,386

$1.910

$0.888

$0.637

$0.594

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.925

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$1.829

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$1.829

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1,000

$1.925

$1.829

$1.829

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Element14

Singapore . 53,311 parts In-Stock

1+ parts

$2.750

100+ parts

$1.200

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$0.878

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$0.820

53,311

$2.750

$1.200

$0.878

$0.820

Rochester

USA . 95,788 parts In-Stock

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-

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$0.686

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$0.569

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$0.507

95,788

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$0.686

$0.569

$0.507

RS (Exports)

UK . 33,735 parts In-Stock

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$0.630

33,735

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Distrelec

Netherlands . 10,000 parts In-Stock

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Arrow

USA . 5,000 parts In-Stock

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Verical

USA . 5,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 587 parts In-Stock

1+ parts

$0.533

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587

$0.533

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Nova Conductors

Japan . 10 parts In-Stock

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$0.934

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10

$0.934

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TME

Poland . 1,177 parts In-Stock

1+ parts

$1.240

100+ parts

$0.680

1k+ parts

$0.570

10k+ parts

$0.456

1,177

$1.240

$0.680

$0.570

$0.456

Chip Stock

USA . 96,650 parts In-Stock

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Vyrian

USA . 58,675 parts In-Stock

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IBS Electronics

USA . 30,000 parts In-Stock

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$0.708

30,000

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$0.708

Rutronik

Germany . 5,000 parts In-Stock

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$0.379

5,000

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$0.379

NAC Semi

USA . 5,000 parts In-Stock

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$0.716

5,000

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$0.716

VNN

France . 3,970 parts In-Stock

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Bristol Electronics

USA . 3,533 parts In-Stock

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3,533

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EPE Components Inc.

USA . 985 parts In-Stock

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985

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Vectronix, Inc

USA . 400 parts In-Stock

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400

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ComSIT USA

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100

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ComSIT Distribution GmbH

Germany . 100 parts In-Stock

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100

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Cyclops Electronics Ltd

UK . 54 parts In-Stock

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J2 Sourcing AB

Sweden . 40 parts In-Stock

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Elcom Components

USA . 32 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 57,518 parts In-Stock

1+ parts

$0.378

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$0.378

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Corphita

USA . 222 parts In-Stock

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$0.505

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222

$0.505

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Aztec Data Supply Inc.

USA . 3,718 parts In-Stock

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$0.598

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3,718

$0.598

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Semicontronic

India . 56,122 parts In-Stock

1+ parts

$0.820

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$0.800

1k+ parts

$0.795

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56,122

$0.820

$0.800

$0.795

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Argo Parts USA

USA . 682 parts In-Stock

1+ parts

$0.829

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682

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.934

100+ parts

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$0.887

10k+ parts

$0.869

2,000

$0.934

-

$0.887

$0.869

Modulus Dynamics

Lithuania . 25,663 parts In-Stock

1+ parts

$1.099

100+ parts

$1.055

1k+ parts

$1.011

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25,663

$1.099

$1.055

$1.011

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Corohmni

South Africa . 245 parts In-Stock

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$1.345

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$1.345

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Continental Prestige Electronics

USA . 70,145 parts In-Stock

1+ parts

$1.510

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$0.936

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$0.607

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70,145

$1.510

$0.936

$0.607

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.925

100+ parts

$1.829

1k+ parts

$1.829

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1,000

$1.925

$1.829

$1.829

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Microchip USA

USA . 7,459 parts In-Stock

1+ parts

$4.235

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7,459

$4.235

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Eastek

USA . 315,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 50,013 parts In-Stock

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Perfect Parts

USA . 42,099 parts In-Stock

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Allen Electronics Distributors

USA . 33,735 parts In-Stock

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$0.708

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33,735

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$0.708

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RC Electronics

USA . 31,556 parts In-Stock

1+ parts

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$0.950

1k+ parts

$0.870

10k+ parts

$0.840

31,556

-

$0.950

$0.870

$0.840

Robosynatics

Brazil . 18,991 parts In-Stock

1+ parts

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$1.911

1k+ parts

$1.872

10k+ parts

$1.872

18,991

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$1.911

$1.872

$1.872

Lucentia Tech

USA . 18,991 parts In-Stock

1+ parts

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$1.911

1k+ parts

$1.872

10k+ parts

$1.872

18,991

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$1.911

$1.872

$1.872

Lixinc

USA . 17,691 parts In-Stock

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GreenTree Electronics

Israel . 15,000 parts In-Stock

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Futuretech Components

Singapore . 5,000 parts In-Stock

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iodParts Technologies Inc.

India . 4,740 parts In-Stock

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$0.918

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4,740

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$0.918

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A-Z Elektronik GmbH

Germany . 3,366 parts In-Stock

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3,366

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Formix International (Excess)

India . 140 parts In-Stock

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Kepictronics

USA . 41 parts In-Stock

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Overview

Unlock the power of innovation with the BSC123N08NS3GATMA1 by Infineon Technologies. This top-of-the-line Power Field Effect Transistor (FET) boasts unparalleled quality and reliability, making it a game-changer in the world of switching applications. With a maximum pulsed drain current of 220A and a minimum DS breakdown voltage of 80V, this N-channel transistor is designed to deliver optimal performance in a variety of scenarios. Say goodbye to limitations and hello to endless possibilities with the BSC123N08NS3GATMA1. Elevate your projects and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the Power FET durable and resistant to damage, ensuring long-lasting performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and allows for more efficient switching operations.

Minimum DS Breakdown Voltage: 80 V

The high breakdown voltage ensures reliable operation and protection against voltage spikes.

Maximum Pulsed Drain Current (IDM): 220 A

The high pulsed drain current allows for handling high power loads and transient spikes effectively.

Maximum Power Dissipation (Abs): 66 W

The high power dissipation rating ensures the FET can handle high power applications without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The Metal-Oxide Semiconductor technology offers high performance and reliability in switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can operate efficiently in a wide range of temperature conditions.

Maximum Drain Current (ID): 55 A

The high drain current rating allows for handling large currents, making this FET suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.0123 ohm

The low drain-source on resistance results in minimal power loss and efficient switching performance.

Technical Specifications

Power Field Effect Transistors (FET) BSC123N08NS3GATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

70 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (ID):

55 A

Maximum Drain-Source On Resistance:

.0123 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

220 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSC123N08NS3GATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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