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IRF5305STRLPBF

Infineon Technologies

IRF5305STRLPBF by Infineon Technologies

IRF5305STRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, 110A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 110W and operates up to 175°C.

Median Price

$1.020

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35

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1k+

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Chip1Stop

Japan . 5,799 parts In-Stock

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$1.030

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$0.869

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$1.030

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Adafruit Industries

USA . 450 parts In-Stock

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$1.490

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$1.416

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$1.416

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$1.490

$1.416

$1.416

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DigiKey

USA . 21,943 parts In-Stock

1+ parts

$2.480

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$1.092

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$0.827

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$0.707

21,943

$2.480

$1.092

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$0.707

Newark

USA . 11,800 parts In-Stock

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$2.740

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Mouser Electronics

USA . 3,284 parts In-Stock

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$1.260

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$0.952

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Future Electronics

Canada . 31,200 parts In-Stock

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$0.770

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Arrow

USA . 23,200 parts In-Stock

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Verical

USA . 23,200 parts In-Stock

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EBV Elektronik

Germany . 21,600 parts In-Stock

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Element14

Singapore . 9,001 parts In-Stock

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$1.360

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$0.819

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Farnell

UK . 8,866 parts In-Stock

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$0.838

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Avnet

USA . 1,600 parts In-Stock

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RS (Exports)

UK . 860 parts In-Stock

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$0.909

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Ozdisan Elektronik

Türkiye . 2,745 parts In-Stock

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$0.634

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2,745

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Nova Conductors

Japan . 450 parts In-Stock

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$0.860

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Digiode

USA . 729 parts In-Stock

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$1.099

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Maritex

Poland . 25 parts In-Stock

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$2.195

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$1.325

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$1.119

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$2.195

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TME

Poland . 2,266 parts In-Stock

1+ parts

$2.370

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$1.020

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$0.780

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$0.710

2,266

$2.370

$1.020

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$0.710

Infinite Electronics LLP

India . 40,000 parts In-Stock

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Chip Stock

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IBS Electronics

USA . 16,000 parts In-Stock

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Semtec, LLC

USA . 8,724 parts In-Stock

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NAC Semi

USA . 8,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,200 parts In-Stock

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Rutronik

Germany . 2,400 parts In-Stock

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Schukat

Germany . 1,970 parts In-Stock

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Bristol Electronics

USA . 935 parts In-Stock

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ComSIT Distribution GmbH

Germany . 478 parts In-Stock

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ComSIT USA

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LIBRA Elektronik GmbH

Germany . 378 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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Inventory MP

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EMSNET

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France . 100 parts In-Stock

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Ampacity Inc.

Singapore . 27,029 parts In-Stock

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$0.170

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Semicontronic

India . 29,269 parts In-Stock

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$0.453

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$0.442

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$0.439

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$0.453

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$0.439

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Modulus Dynamics

Lithuania . 3,402 parts In-Stock

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$0.569

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Argo Parts USA

USA . 4,461 parts In-Stock

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$0.797

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Corphita

USA . 599 parts In-Stock

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$1.041

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Aztec Data Supply Inc.

USA . 3,843 parts In-Stock

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$1.208

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Corohmni

South Africa . 248 parts In-Stock

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$1.237

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Component Stockers USA

USA . 44,624 parts In-Stock

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$1.290

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$0.680

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$0.430

10k+ parts

$0.530

44,624

$1.290

$0.680

$0.430

$0.530

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.490

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$1.416

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$1.416

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$1.490

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$1.416

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Perfect Parts

USA . 124,155 parts In-Stock

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GreenTree Electronics

Israel . 20,000 parts In-Stock

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Robosynatics

Brazil . 13,050 parts In-Stock

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$0.520

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$0.520

Lucentia Tech

USA . 13,050 parts In-Stock

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$0.531

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$0.520

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$0.520

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Lixinc

USA . 12,191 parts In-Stock

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Continental Prestige Electronics

USA . 11,480 parts In-Stock

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$0.833

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$0.642

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Futuretech Components

Singapore . 9,535 parts In-Stock

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Formix International (Excess)

India . 8,089 parts In-Stock

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Authorized Procurement Solutions

USA . 5,965 parts In-Stock

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Kepictronics

USA . 4,800 parts In-Stock

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iodParts Technologies Inc.

India . 2,824 parts In-Stock

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$0.903

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.843

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$0.817

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$0.800

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$0.800

Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Alle Elektronik GmbH

Germany . 1,600 parts In-Stock

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1,600

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Allen Electronics Distributors

USA . 1,400 parts In-Stock

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$0.985

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1,400

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Assy Fe

Spain . 100 parts In-Stock

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100

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ChipTracer

USA . 24 parts In-Stock

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Overview

Discover the superior quality and reliability of the IRF5305STRLPBF power field effect transistor by Infineon Technologies. With a focus on innovation and cutting-edge technology, Infineon delivers products that excel in performance and efficiency. Ideal for switching applications, this P-channel transistor offers enhanced mode operation and a maximum pulsed drain current of 110A. Experience the benefits of seamless integration with its surface mount design and built-in diode configuration. Trust in Infineon to provide solutions that meet your power management needs effectively and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging makes the FET lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower on-resistance and higher current-carrying capacity compared to N-channel FETs, making them a good choice for certain switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps protect the circuit from voltage spikes and reverse current flow, enhancing the reliability of the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast switching speeds and efficient performance.

Surface Mount: YES

Being surface mount compatible makes it easy to integrate this FET into compact PCB designs, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 55 V

With a minimum breakdown voltage of 55 V, this FET is suitable for applications requiring high voltage tolerance.

Maximum Pulsed Drain Current (IDM): 110 A

The high pulsed drain current rating allows for reliable performance under heavy loads and transient conditions.

Avalanche Energy Rating (EAS): 280 mJ

The high avalanche energy rating indicates the FET's ability to withstand energy spikes and provides added protection to the circuit.

Maximum Power Dissipation (Abs): 110 W

With a maximum power dissipation of 110 W, this FET can handle high power levels without overheating or performance degradation.

Maximum Drain Current (ID): 31 A

The high drain current rating allows this FET to handle large currents, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.06 ohm

The low on-resistance of 0.06 ohm ensures efficient power delivery and minimal voltage drop across the FET.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this FET can withstand high-temperature environments and operate reliably under extreme conditions.

Technical Specifications

Power Field Effect Transistors (FET) IRF5305STRLPBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Avalanche Energy Rating (EAS):

280 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

55 V

Maximum Drain Current (Abs) (ID):

31 A

Maximum Drain Current (ID):

31 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

110 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF5305STRLPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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