Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NXH020P120MNF1PG
Onsemi
NXH020P120MNF1PG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 153A IDM, and 0.03ohm RDS(on). Ideal for switching applications, it features SERIES CONNECTED configuration with 2 elements, built-in diode & thermistor. Operating in enhancement mode, this MOSFET has a max power dissipation of 119W and operates b/w -40 to 175 °C.
ISOLATED
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
1200 V
51 A
.03 ohm
METAL-OXIDE SEMICONDUCTOR
19 pF
R-XUFM-X18
2
18
ENHANCEMENT MODE
175 Cel
-40 Cel
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
119 W
153 A
NO
UPPER
SWITCHING
SILICON CARBIDE
NXH040P120MNF1PG
NXH040P120MNF1PG by Onsemi is an N-CHANNEL FET with 1200V DS breakdown voltage and 74A IDM. Ideal for switching applications, it features a package style of FLANGE MOUNT, operating temperature range of -40 to 175 °C, and 0.056 ohm max drain-source resistance.
30 A
.056 ohm
12 pF
74 W
74 A
NVHL055N60S5F
NVHL055N60S5F by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It is used for SWITCHING applications, featuring a max IDM of 159A and EAS of 417mJ. Operating in ENHANCEMENT MODE, it has a Drain Current of 45A and 0.055ohm RDS(on), suitable for high-power requirements.
417 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
600 V
45 A
.055 ohm
TO-247
R-PSFM-T3
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
275 W
159 A
AEC-Q101
THROUGH-HOLE
SINGLE
SILICON
CSD19535KCS
Texas Instruments
CSD19535KCS by Texas Instruments is a N-CHANNEL FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 400A IDM and 0.0044 ohm RDS(on). Operating from -55 to 175 °C, this transistor has a built-in diode and 38pF Crss.
AVALANCHE RATED
451 mJ
100 V
150 A
.0044 ohm
38 pF
TO-220
e3
400 A
MATTE TIN
STP24N60DM2
STMicroelectronics
STP24N60DM2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 72A max pulsed drain current and 0.2 ohm max drain-source resistance. The transistor operates in enhancement mode and has a package style of flange mount.
180 mJ
18 A
.2 ohm
TO-220AB
72 A
STW24N60DM2
STW24N60DM2 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 72A max pulsed drain current, and low on-resistance of 0.2Ω. Ideal for high-efficiency power management in various electronic devices.
NOT SPECIFIED
FQPF13N50CT
Fairchild Semiconductor
FQPF13N50CT by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 13A ID. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE and 0.48 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has an IDM of 52A and EAS of 860mJ.
860 mJ
500 V
13 A
.48 ohm
52 A
STI45N10F7
STI45N10F7 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 45 A, a breakdown voltage of 100 V, and low on-resistance of 0.018 Ω. Ideal for power management in various electronic devices.
190 mJ
.018 ohm
TO-262AA
R-PSIP-T3
IN-LINE
180 A
BTS244ZNKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; No. of Terminals: 5; Maximum Drain Current (ID): 35 A;
1650 mJ
55 V
35 A
R-PSFM-T5
5
188 A
BTS282ZE3230AKSA2
BTS282ZE3230AKSA2 by Infineon is a N-CHANNEL FET with 49V DS breakdown voltage, 320A IDM, and 0.0095 ohm max RDS(on). Ideal for switching applications in automotive systems due to AEC-Q101 standard compliance and built-in diode & temp sensor.
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
80 A
.0095 ohm
R-PSFM-T7
7
320 A
TIN
IPA60R230P6XKSA1
Infineon's IPA60R230P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 48A IDM, 352mJ EAS, and 0.23 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 33W and can handle up to 16.8A ID.
352 mJ
16.8 A
.23 ohm
33 W
48 A
IPA60R380P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;
210 mJ
10.6 A
.38 ohm
31 W
29 A
IPI024N06N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
634 mJ
60 V
120 A
.0024 ohm
480 A
IPI030N10N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; No. of Terminals: 3; Package Shape: RECTANGULAR;
1000 mJ
100 A
.003 ohm
IPI037N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain-Source On Resistance: .00375 ohm; Minimum DS Breakdown Voltage: 80 V;
510 mJ
80 V
.00375 ohm
IPI075N15N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 780 mJ; Terminal Form: THROUGH-HOLE; JEDEC-95 Code: TO-262AA;
780 mJ
150 V
.0075 ohm
IPP023N04NGHKSA1
IPP023N04NGHKSA1 by Infineon Technologies is a N-CHANNEL FET with 40V DS breakdown voltage and 0.0023 ohm max RDS(on). Ideal for switching applications, it features 90A max drain current, 400A pulsed drain current, and 150mJ avalanche energy rating. Suitable for enhancement mode operation in various power electronics systems.
ULTRA-LOW RESISTANCE
150 mJ
40 V
90 A
.0023 ohm
IPP024N06N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 120 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP030N10N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
IPP032N06N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; No. of Terminals: 3; Minimum DS Breakdown Voltage: 60 V;
235 mJ
.0032 ohm
IPP034N03LGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 400 A; Maximum Drain Current (ID): 80 A;
70 mJ
30 V
.0047 ohm
IPP037N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Avalanche Energy Rating (EAS): 165 mJ; Maximum Drain Current (ID): 90 A;
165 mJ
.0037 ohm
360 A
IPP037N08N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP042N03LGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 70 A; No. of Elements: 1; No. of Terminals: 3;
60 mJ
70 A
.006 ohm
IPP045N10N3GHKSA1
IPP045N10N3GHKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0045 ohm RDS(on), and 400A IDM. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and 340mJ EAS rating. The PLASTIC/EPOXY package with THROUGH-HOLE terminals makes it easy to integrate in various systems.
340 mJ
.0045 ohm
IPP052N06L3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Maximum Drain-Source On Resistance: .005 ohm; Maximum Drain Current (ID): 80 A;
77 mJ
.005 ohm
IPP057N06N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .0057 ohm; Transistor Element Material: SILICON;
.0057 ohm
IPP05CN10NGHKSA1
IPP05CN10NGHKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 400A and 0.0054 ohm Drain-Source On Resistance. The transistor's METAL-OXIDE SEMICONDUCTOR technology ensures high performance in ENHANCEMENT MODE operation.
826 mJ
.0054 ohm
IPP072N10N3GHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 80 A; No. of Elements: 1;
160 mJ
.0072 ohm
IPP075N15N3GHKSA1
IPP075N15N3GHKSA1 by Infineon is a N-CHANNEL FET with 150V DS Breakdown Voltage and 0.0075 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it has 100A Max Drain Current and 400A Pulsed Drain Current (IDM).
IPP12CN10LGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 150 mJ; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
69 A
.012 ohm
276 A
IPP16CN10NGHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .0165 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
107 mJ
53 A
.0165 ohm
212 A
IPP17N25S3100AKSA1
IPP17N25S3100AKSA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 68A IDM, and 54mJ EAS. Ideal for power applications due to its 107W Power Dissipation, -55 to 175 °C Operating Temp Range, and 0.1 ohm Drain-Source On Resistance. Suitable for various industries requiring high-power switching capabilities.
54 mJ
250 V
17 A
.1 ohm
23 pF
107 W
68 A
IPP50R140CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 616 mJ; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
616 mJ
23 A
.14 ohm
56 A
IPP50R299CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
289 mJ
12 A
.299 ohm
26 A
IPP50R350CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .35 ohm; Transistor Application: SWITCHING;
246 mJ
10 A
.35 ohm
22 A
IPP50R399CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 215 mJ; Transistor Application: SWITCHING;
215 mJ
9 A
.399 ohm
20 A
IPP50R520CPHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE; JESD-30 Code: R-PSFM-T3;
166 mJ
7.1 A
.52 ohm
15 A
IPP60R160P6XKSA1
IPP60R160P6XKSA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage and 68A IDM. Ideal for switching applications, it has a 0.16 ohm max RDS(on) and operates in enhancement mode. With 176W power dissipation, it can handle up to 497mJ EAS, making it suitable for high-power tasks.
497 mJ
23.8 A
.16 ohm
176 W
IPP60R230P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 126 W; Maximum Drain Current (ID): 16.8 A; Transistor Application: SWITCHING;
126 W
IPP60R280P6XKSA1
Infineon's IPP60R280P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 39A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 104W and can handle up to 150°C temperature.
285 mJ
13.8 A
.28 ohm
104 W
39 A
IPP60R380P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Finish: TIN; Terminal Form: THROUGH-HOLE;
83 W
IPP65R065C7XKSA1
IPP65R065C7XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 145A max pulsed drain current and 0.065 ohm max drain-source on resistance. Operating in enhancement mode, it has a package style of flange mount and can handle up to 171W power dissipation.
171 mJ
650 V
33 A
.065 ohm
171 W
145 A
IPS040N03LGBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
.0059 ohm
TO-251
IPW60R160P6FKSA1
Infineon's IPW60R160P6FKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 68A IDM, 497mJ EAS, and 0.16 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 176W in a FLANGE MOUNT package.
IPW60R230P6FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 126 W; Minimum DS Breakdown Voltage: 600 V; Operating Mode: ENHANCEMENT MODE;
IPW60R280P6FKSA1
IPW60R280P6FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage. It has a max IDM of 39A and EAS of 285mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.28 ohm RDS(on) and can handle up to 104W power dissipation.
IPW65R125C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 101 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
HIGH RELIABILITY
89 mJ
.125 ohm
101 W
75 A
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