Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STF34NM60N
STMicroelectronics
STF34NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and max drain current of 29A. It offers low on-resistance of 0.105Ω and operates up to 150 °C. Perfect for high-efficiency power management solutions.
345 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
600 V
29 A
.105 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
40 W
116 A
Not Qualified
FET General Purpose Power
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STW34NM60N
STW34NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 116A IDM, 345mJ EAS, and 0.105 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 210W at 150°C.
TO-247
e3
210 W
MATTE TIN
IPS031N03LG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
60 mJ
30 V
90 A
.004 ohm
TO-251
R-PSIP-T3
175 Cel
IN-LINE
94 W
400 A
IPU050N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
50 A
.0073 ohm
TO-251AA
68 W
350 A
IPU060N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
.009 ohm
56 W
IPU075N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 47 W; Package Style (Meter): IN-LINE; Transistor Element Material: SILICON;
50 mJ
.0114 ohm
47 W
IPU090N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 280 A;
70 mJ
40 A
.0135 ohm
42 W
280 A
IPU105N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Minimum DS Breakdown Voltage: 30 V; Terminal Form: THROUGH-HOLE;
30 mJ
DRAIN
35 A
.0105 ohm
38 W
245 A
IPU135N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Maximum Pulsed Drain Current (IDM): 210 A; Terminal Form: THROUGH-HOLE;
20 mJ
30 A
31 W
210 A
IPP080N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 47 W; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): FLANGE MOUNT;
48 A
.0119 ohm
IPP096N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Drain Current (ID): 35 A; Package Style (Meter): FLANGE MOUNT;
40 mJ
.0141 ohm
IPP114N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPP147N03LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Avalanche Energy Rating (EAS): 20 mJ; Maximum Drain Current (ID): 20 A;
20 A
.0217 ohm
140 A
FDA20N50-F109
Onsemi
The Onsemi FDA20N50-F109 is a Power FET with N-CHANNEL polarity, 500V DS breakdown voltage, and 88A max pulsed drain current. Ideal for switching applications, it features a built-in diode in a plastic/epoxy package with 3 terminals. Operating in enhancement mode, it has a max power dissipation of 280W and can handle up to 150°C temperature.
FAST SWITCHING
1110 mJ
500 V
22 A
.23 ohm
280 W
88 A
FQH44N10-F133
FQH44N10-F133 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 192A IDM, and 0.039 ohm RDS(on). Ideal for SWITCHING applications due to its 180W Pdiss, EAS of 530mJ, and -55 to +175°C operating temp. Suitable for various power control circuits.
530 mJ
100 V
.039 ohm
TO-247AB
180 W
192 A
FDH50N50-F133
FDH50N50-F133 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 192A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 625W and operating temperature up to 150°C, this transistor offers reliable performance in various high-power electronic systems.
1868 mJ
625 W
Matte Tin (Sn) - annealed
FQA13N80-F109
Onsemi's FQA13N80-F109 is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it offers 50.4A IDM and 1100mJ EAS ratings. With 0.75 ohm RDS(on) and 300W Pd, this MOSFET operates in ENHANCEMENT MODE up to 150°C.
1100 mJ
800 V
12.6 A
.75 ohm
300 W
50.4 A
FCH041N60F-F085
FCH041N60F-F085 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a max Drain Current of 76A and an Operating Temperature range of -55 to 150°C. Ideal for SWITCHING applications, this transistor features a built-in DIODE and offers high power dissipation at 595W.
2025 mJ
76 A
.041 ohm
-55 Cel
595 W
AEC-Q101
514 ns
242 ns
FCPF190N60E-F152
FCPF190N60E-F152 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features 61.8A Max Pulsed Drain Current and 400mJ Avalanche Energy Rating, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W and operates b/w -55 to 150 °C temperature range.
400 mJ
20.6 A
.19 ohm
165 pF
39 W
61.8 A
252 ns
94 ns
FQP13N50C-F105
FQP13N50C-F105 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 860mJ, operating in ENHANCEMENT MODE. The transistor has a RECTANGULAR package shape with THROUGH-HOLE terminals, suitable for high-power FLANGE MOUNT designs.
860 mJ
52 A
STP65N150M9
STP65N150M9 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 50A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
200 mJ
650 V
.15 ohm
140 W
AOTF7S65
Alpha & Omega Semiconductor
AOTF7S65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 7A max drain current and 35W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its single configuration makes it suitable for various power management systems.
7 A
35 W
IPA65R110CFDXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34.7 W; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-220AB;
845 mJ
31.2 A
.11 ohm
34.7 W
99.6 A
TIN
IPA65R150CFDXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34.7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 72 A;
614 mJ
22.4 A
72 A
IPI65R190CFDXKSA2
IPI65R190CFDXKSA2 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It features a Max IDM of 57.2A and EAS of 484mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a low 0.19 ohm RDS(ON) and can handle up to 151W power dissipation.
484 mJ
17.5 A
TO-262AA
151 W
57.2 A
Tin (Sn)
IPW65R110CFDFKSA2
IPW65R110CFDFKSA2 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 99.6A Pulsed Drain Current, 845mJ Avalanche Energy Rating, and 0.11 ohm On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 277.8W power dissipation at temperatures ranging from -55 to 150 °C.
277.8 W
IPW65R150CFDFKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 195.3 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;
195.3 W
IPA65R420CFDXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.2 W; Package Style (Meter): FLANGE MOUNT; Terminal Finish: TIN;
227 mJ
8.7 A
.42 ohm
31.2 W
27 A
IPP65R420CFDXKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
83.3 W
IPW65R420CFDFKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
MSCSM120AM027CD3AG
Microchip Technology
MSCSM120AM027CD3AG by Microchip Technology is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements in series connected configuration for switching applications. With max IDM of 1400A and ID of 733A, it operates in enhancement mode with 0.0035 ohm RDS(on) and withstands up to 175°C temperature.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
1200 V
733 A
.0035 ohm
.23 pF
R-XUFM-X7
2
7
-40 Cel
UNSPECIFIED
2970 W
1400 A
UPPER
SILICON CARBIDE
SCT30N120H
SCT30N120H by STMicroelectronics is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. It has a max IDM of 90A and ID of 40A, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features a Drain-Source On Resistance of 0.1 ohm and can handle up to 270W power dissipation.
.1 ohm
25 pF
200 Cel
245
270 W
FCPF190N60E-F154
FCPF190N60E-F154 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 61.8A IDM and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W and can handle up to 150°C operating temperature.
FCPF190N60-F154
FCPF190N60-F154 by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60.6A IDM, 400mJ EAS, and 0.199 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and -55°C min temp.
20.2 A
.199 ohm
128 pF
60.6 A
158 ns
80 ns
FCPF260N60E-F154
FCPF260N60E-F154 by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 45A IDM and 292.5mJ EAS. Operating in ENHANCEMENT MODE, it has 0.26 ohm RDS(on) and can handle up to 36W power dissipation.
292.5 mJ
15 A
.26 ohm
130 pF
36 W
45 A
224 ns
82 ns
FCPF260N65FL1-F154
FCPF260N65FL1-F154 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has 45A IDM, 293mJ EAS for SWITCHING applications. With 0.26 ohm RDS(on), it operates in ENHANCEMENT MODE at -55 to 150 °C, making it ideal for high-power switching circuits.
293 mJ
1 pF
140 ns
86 ns
FCPF400N80ZL1-F154
FCPF400N80ZL1-F154 by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It has a max IDM of 33A and EAS of 339mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.4 ohm RDS(on), -55 to 150 °C temperature range, and fast ton of 84ns/toff of 127ns.
339 mJ
11 A
.4 ohm
.5 pF
35.7 W
33 A
127 ns
84 ns
NVH050N65S3F
The Onsemi NVH050N65S3F is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 145A IDM, 830mJ EAS, and 0.05 ohm RDS(ON). With a max power dissipation of 403W and operating temperature range from -55 to 150 °C, it offers reliable performance in various industrial settings.
830 mJ
58 A
.05 ohm
13 pF
403 W
145 A
NVH4L027N65S3F
NVH4L027N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 187.5A IDM. Ideal for applications requiring high power dissipation, such as automotive systems due to its AEC-Q101 reference standard compliance.
1610 mJ
75 A
.0274 ohm
26 pF
R-PSFM-T4
4
187.5 A
NVHL050N65S3F
The Onsemi NVHL050N65S3F is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 145A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 403W, -55 to 150 °C operating temperature range, and METAL-OXIDE SEMICONDUCTOR technology.
NVH4L018N075SC1
NVH4L018N075SC1 by Onsemi is a N-CHANNEL FET with 750V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 483A and EAS of 162mJ, suitable for high-power operations. With an RDS(on) of 0.018 ohm and operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.
162 mJ
750 V
.018 ohm
31 pF
260
500 W
483 A
30
NVHL040N65S3HF
NVHL040N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A IDM. Ideal for SWITCHING applications, it features 0.04 ohm RDS(on) and 446W Pdiss in a RECTANGULAR package with Matte Tin finish.
1009 mJ
65 A
.04 ohm
446 W
162.5 A
NVHL065N65S3F
NVHL065N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 115A IDM. Ideal for applications requiring high power dissipation up to 337W, such as automotive systems due to AEC-Q101 standard compliance.
635 mJ
46 A
.065 ohm
11 pF
337 W
115 A
NVHL082N65S3HF
NVHL082N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 100A and 0.082 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, this transistor has an EAS of 510mJ and can handle up to 313W power dissipation.
510 mJ
.082 ohm
313 W
100 A
NTHL099N60S5
NTHL099N60S5 by Onsemi is a Power FET with 600V DS Breakdown Voltage, 95A IDM, and 0.099 ohm RDS(on). It is used for switching applications in enhancement mode with a max power dissipation of 184W. The transistor operates b/w -55 to 150 °C and features an avalanche energy rating of 232mJ.
232 mJ
.099 ohm
184 W
95 A
NVH082N65S3F
NVH082N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It is ideal for SWITCHING applications, offering 100A IDM and 510mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 313W and can handle up to 150 °C temperature.
NTHL019N60S5F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 568 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PSFM-T3;
1208 mJ
.019 ohm
568 W
393 A
NTHL120N60S5Z
NTHL120N60S5Z by Onsemi is a Power FET with 600V DS Breakdown Voltage, 81A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. The transistor features a SINGLE configuration with BUILT-IN DIODE and METAL-OXIDE SEMICONDUCTOR technology.
191 mJ
28 A
.12 ohm
160 W
81 A
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