Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPU78CN10NG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Package Style (Meter): IN-LINE; Terminal Form: THROUGH-HOLE;
17 mJ
SINGLE WITH BUILT-IN DIODE
100 V
13 A
.078 ohm
METAL-OXIDE SEMICONDUCTOR
TO-251AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
31 W
52 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STD70N03L-1
STMicroelectronics
STD70N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
LOW THRESHOLD
300 mJ
DRAIN
30 V
70 A
.013 ohm
TO-251
70 W
280 A
TIN
STP75NS04Z
STP75NS04Z by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage, 320A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications due to its 110W Pdiss, 470mJ EAS rating, and ENHANCEMENT MODE operation. Package style: FLANGE MOUNT.
470 mJ
33 V
80 A
.011 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
110 W
320 A
IPP070N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
AVALANCHE RATED
530 mJ
60 V
.007 ohm
250 W
FCA20N60_F109
Fairchild Semiconductor
Fairchild Semiconductor's FCA20N60_F109 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 60A IDM and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 208W and can withstand temperatures up to 150°C.
690 mJ
600 V
20 A
.19 ohm
150 Cel
208 W
60 A
FQA10N80C_F109
Fairchild Semiconductor's FQA10N80C_F109 is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 40A IDM and 920mJ EAS. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 240W at 150°C.
920 mJ
800 V
10 A
1.1 ohm
240 W
40 A
FQA11N90C_F109
Fairchild Semiconductor's FQA11N90C_F109 is a N-CHANNEL Power FET with 900V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 44A IDM and 960mJ EAS. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 300W at 150°C.
960 mJ
900 V
11 A
1.4 ohm
300 W
44 A
FQA11N90_F109
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 11.4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1000 mJ
11.4 A
.96 ohm
45.6 A
FQA9N90C_F109
FQA9N90C_F109 by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 36A and EAS of 900mJ, operating in ENHANCEMENT MODE. The transistor has a single configuration with built-in diode, suitable for high-power requirements up to 280W at 150°C.
900 mJ
9 A
280 W
36 A
STF10N65K3
STF10N65K3 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 212mJ avalanche energy rating. The transistor operates in enhancement mode with 0.85 ohm max drain-source resistance, suitable for high-power applications up to 35W dissipation.
212 mJ
ISOLATED
650 V
.85 ohm
35 W
STF18NM60N
STF18NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 350mJ EAS, and 0.285 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 30W at 150°C.
350 mJ
.285 ohm
30 W
STF5N95K3
STF5N95K3 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 950V breakdown voltage and 4A max drain current. It operates in enhancement mode with a power dissipation of up to 25W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
100 mJ
950 V
4 A
3.5 ohm
25 W
16 A
STF7N52DK3
STF7N52DK3 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 525V breakdown voltage and a max drain current of 6.2A. It operates in enhancement mode with a power dissipation of 25W. This versatile transistor is suitable for various electronic circuits.
ULTRA-LOW RESISTANCE
525 V
6.2 A
6 A
1.15 ohm
24 A
STF8N65M5
STF8N65M5 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 650V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of 25W. Ideal for high-efficiency power management solutions.
120 mJ
7 A
.6 ohm
NOT SPECIFIED
28 A
STI18NM60N
STI18NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and 13A max drain current. It offers a compact through-hole design with built-in diode and operates at up to 150 °C. With a power dissipation of 110W, it's perfect for high-efficiency circuits.
TO-262AA
STI200N6F3
STI200N6F3 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with minimal resistance.
918 mJ
120 A
.0038 ohm
330 W
480 A
STI21N65M5
STI21N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM and 0.19 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various power applications.
400 mJ
17 A
125 W
68 A
STI8N65M5
STI8N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP12N65M5
STP12N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 34A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
150 mJ
8.5 A
.43 ohm
34 A
STP200N6F3
STP200N6F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
STP5N95K3
STP5N95K3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 16A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
90 W
STP7N52DK3
STP7N52DK3 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 6.2 A, a breakdown voltage of 525 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP8N65M5
STP8N65M5 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 650V breakdown voltage and 7A max drain current. It offers a low on-resistance of 0.6Ω and operates at up to 150 °C. This robust transistor is suitable for high-power circuits.
STU12N65M5
STU12N65M5 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 34A max pulsed drain current, and operates at up to 150 °C. Ideal for high-performance power management in various electronic devices.
260
30
STU5N95K3
STU5N95K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 950V breakdown voltage, 4A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
Matte Tin (Sn) - annealed
STU8N65M5
STU8N65M5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STW18NM60N
STW18NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 350mJ EAS, and 0.285 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W at 150°C.
TO-247
STW18NM80
STW18NM80 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 68A max pulsed drain current, 600mJ avalanche energy rating, and 0.295 ohm max drain-source resistance. Suitable for high-power operations in various industries.
600 mJ
.295 ohm
190 W
STW21N65M5
STW21N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 68A pulsed drain current. It operates in enhancement mode with a max power dissipation of 125W. Ideal for high-efficiency power management solutions.
Matte Tin (Sn)
IPI126N10N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
70 mJ
58 A
.0126 ohm
94 W
232 A
NTD4806N-1G
Onsemi
NTD4806N-1G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 150A IDM, and 0.0094 ohm max RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Package style: in-line, terminal finish: tin, and operating mode: enhancement mode.
220 mJ
.0094 ohm
150 A
STB60NF10-1
STB60NF10-1 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-efficiency circuits, it operates in enhancement mode with built-in diode support.
485 mJ
.023 ohm
IPI06CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-262AA;
480 mJ
100 A
.0065 ohm
214 W
400 A
IPP050N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
810 mJ
.005 ohm
IPP06CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 480 mJ;
IPP080N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Qualification: Not Qualified; Package Shape: RECTANGULAR;
448 mJ
.008 ohm
SPS01N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
20 mJ
.8 A
6 ohm
11 W
1.6 A
SPS03N60C3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
3.2 A
38 W
9.6 A
NTD4960N-1G
NTD4960N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 137A IDM, and 0.0127 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in DIODE. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C.
51.2 mJ
8.9 A
.0127 ohm
137 A
NTD4960N-35G
NTD4960N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 137A IDM, and 0.0127 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a SILICON element and METAL-OXIDE SEMICONDUCTOR technology.
NTD4963N-35G
NTD4963N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 132A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is IN-LINE with SILICON transistor element material.
33.8 mJ
8.1 A
.016 ohm
35.7 W
132 A
FET General Purpose Powers
STD11NM60N-1
STD11NM60N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
200 mJ
.45 ohm
100 W
STD7NM80-1
STD7NM80-1 by STMicroelectronics is a power FET with a min DS breakdown voltage of 800V. It is an N-channel transistor used for switching applications, with a max pulsed drain current of 26A and a max power dissipation of 90W.
240 mJ
6.5 A
1.05 ohm
26 A
STF11NM60N
STF11NM60N by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STF7NM80
STF7NM80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 25 W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
STP11NM60N
STP11NM60N from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 100W power dissipation. Its robust design ensures reliability in high-temperature environments up to 150 °C.
STP65NF06
STP65NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.014 ohm RDS(on). It has 240A IDM, 110W Pdiss, and EAS of 390mJ. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE.
390 mJ
.014 ohm
240 A
STP7NM80
STP7NM80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.5 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 90 W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
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