Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STD11NM60N-1 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 10A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
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The plastic/epoxy body offers good protection against environmental factors, ensuring durability and reliability of the FET in various applications.
N-channel FETs generally provide better performance, including higher efficiency and faster switching speeds, making them ideal for power applications.
The built-in diode allows for flyback protection, making this FET suitable for use in inductive load applications, enhancing circuit robustness.
Designed for switching applications, this FET can efficiently control large currents and voltages, making it ideal for power management systems.
A high breakdown voltage indicates reliability in high-voltage applications, allowing for safer and more effective operation in power circuits.
The rectangular package shape allows for efficient space utilization on PCBs, making it easier to integrate into various designs.
Through-hole terminals provide strong mechanical support and are easier to solder, ensuring a solid electrical connection in demanding applications.
Enhancement mode operation allows for lower off-state power consumption, making this FET more energy-efficient in active circuits.
A high maximum pulsed drain current rating allows this FET to handle peak currents effectively, making it suited for high-power applications.
This rating indicates that the FET can withstand transient energy spikes, enhancing its reliability in rapidly fluctuating environments.
The ability to handle up to 10 A ensures that this FET can handle significant current loads, making it ideal for power applications.
A simple 3-terminal design facilitates easier circuit integration and reduces complexity in PCB layout.
A high power dissipation rating enables efficient handling of power, allowing for better thermal management in high-performance applications.
An in-line package style optimizes space in design layouts, making it versatile for a range of electronic uses.
MOSFET technology offers high switching speeds and low on-resistance, making this product a great choice for high-efficiency power conversion.
A high maximum operating temperature allows for performance in demanding thermal environments, ensuring reliability under varying conditions.
Silicon's conductive properties enhance the transistor’s performance and efficiency, making it a common choice for modern electronic circuits.
The matte tin finish provides enhanced corrosion resistance and improved solderability, contributing to long-lasting connections in electronic assemblies.
Capable of carrying 10 A, this FET can operate effectively in power applications without the risk of failure due to current overload.
A low on-resistance results in reduced power loss and improved efficiency, making this FET highly suitable for power circuit designs.
A single terminal position simplifies PCB layout and design, making integration easier and more efficient in circuit designs.
An isolated case connection enhances safety and reliability, preventing any potential issues with cross-talk or interference in complex circuits.
Power Field Effect Transistors (FET) STD11NM60N-1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
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STD11NM60N-1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
BAV99
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
BSS138PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
1N5819HW-7-F
Diodes Incorporated
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
LM358D-T
NXP Semiconductors
LM358D-T by NXP Semiconductors is a dual operational amplifier with 70dB CMRR, 1000kHz unity gain bandwidth, and 9000uV max input offset voltage. Widely used in commercial applications due to its small outline package and low bias current of 0.5uA.
ULN2003ADR
Texas Instruments
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
ULN2803A
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
ROHM
2N2222A
Micro Commercial Components
Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBR0520LT3G
Onsemi
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
STW9N150
STMicroelectronics
STW9N150 by STMicroelectronics is a Power FET with 1500V DS Breakdown Voltage, 32A IDM, and 320W Pd. Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode, and operates in ENHANCEMENT MODE.
FDB3632-F085
FDB3632-F085 by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 100V. It is an N-channel transistor with a max drain current of 12A and a max power dissipation of 310W. This transistor is commonly used for switching applications in various industries.
SI7415DN-T1-GE3
Vishay Intertechnology
SI7415DN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 3.6A and max power dissipation of 3.8W.
IRF5210PBF
Infineon Technologies
IRF5210PBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE. With a Drain Current of 40A and 0.06 ohm On Resistance, it offers reliable performance in various electronic systems.
FDD8424H_F085A
FDD8424H_F085A by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.
IRLL2705TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Drain-Source On Resistance: .051 ohm; Peak Reflow Temperature (C): 260;
STW4N150
STW4N150 by STMicroelectronics is a N-CHANNEL FET with 1500V DS breakdown voltage, ideal for SWITCHING applications. It features 12A max pulsed drain current and 350mJ avalanche energy rating. The transistor operates in ENHANCEMENT MODE with 160W max power dissipation, making it suitable for high-power switching circuits.
SQM40P10-40L_GE3
The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
FDS4559_F085
Fairchild Semiconductor
FDS4559_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 20A IDM and 0.055 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
NX3008NBKW,115
NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
IRF3710PBF
IRF3710PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 180A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
IRFP260NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
G3R450MT17D
Genesic Semiconductor
Power Field-Effect Transistors;
SI7149ADP-T1-GE3
SI7149ADP-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0052 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with DUAL terminals and DRAIN case connection.
STY60NK30Z
STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
IRF3710STRLPBF
IRF3710STRLPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 180A IDM, 57A ID, and 0.023 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation.
FDB33N25TM
FDB33N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 132A Pulsed Drain Current, and 0.094 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 235W in a small outline package style.
SI7463ADP-T1-GE3
Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
IRLML6346TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
IRFL9014PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G3; No. of Terminals: 3; No. of Elements: 1;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STD12NF06LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: MATTE TIN; Terminal Form: GULL WING;
STD10P6F6
STD10P6F6 by STMicroelectronics is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.116 ohm RDS(on), and operates in ENHANCEMENT MODE up to 175°C.
STD13NM60N
STD13NM60N by STMicroelectronics is an N-channel power FET with a min DS breakdown voltage of 600V. It has a max pulsed drain current of 44A and a max power dissipation of 90W. This transistor is commonly used for switching applications.
STD10NF10T4
STD10NF10T4 by STMicroelectronics is an N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 52A and a max power dissipation of 50W in a small outline package. Operating in enhancement mode, it has a max operating temperature of 175°C and on-resistance of 0.13 ohm.
STD11NM60ND
STD11NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 40A and EAS of 200mJ. This ENHANCEMENT MODE transistor has a 0.45 ohm Drain-Source On Resistance and can handle up to 90W power dissipation.
STD13NM60ND
STD13NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 44A and 0.38 ohm Drain-Source On Resistance. This ENHANCEMENT MODE transistor operates at up to 150°C and has a Matte Tin Terminal Finish.
STD1NK80ZT4
STD1NK80ZT4 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 5A and Avalanche Energy Rating of 50mJ. Operating in ENHANCEMENT MODE, it has a Max Power Dissipation of 45W and can withstand temperatures from -55 to 150 °C.
STD18N55M5
STD18N55M5 by STMicroelectronics is a N-CHANNEL Power FET with 550V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 90W and can handle up to 14A drain current.
STD130N6F7
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STD16NF06LT4
STD16NF06LT4 by STMicroelectronics is an N-CHANNEL Power FET with 60V DS Breakdown Voltage and 96A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.085 ohm RDS(on), and 175°C max operating temp. Perfect for high-power circuit designs requiring efficient switching capabilities.
STD1NK60T4
STD1NK60T4 by STMicroelectronics is a N-CHANNEL power FET with a min DS breakdown voltage of 600V. It is suitable for switching applications and has a max drain current of 1A.
STD15NF10T4
STD15NF10T4 by STMicroelectronics is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 60A IDM, and 0.08 ohm RDS(on). With a max power dissipation of 70W and operating temperature of 175°C, it is ideal for high-power switching circuits.
STD13NM60N-H
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Terminal Finish: MATTE TIN; Maximum Drain Current (ID): 11 A;
STD10PF06T4
STD10PF06T4 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM and 125mJ EAS, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and Matte Tin finish, it offers high performance in various power management systems.
STD18N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STD13N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Transistor Application: SWITCHING; No. of Elements: 1;
STD100N10F7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
STD12NF06T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;
STD11N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Minimum Operating Temperature: -55 Cel; Terminal Form: GULL WING;
STD17NF25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 100 mJ;
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