Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
STD1NK80ZT4 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 5A and Avalanche Energy Rating of 50mJ. Operating in ENHANCEMENT MODE, it has a Max Power Dissipation of 45W and can withstand temperatures from -55 to 150 °C.
Median Price
$0.480
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36
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1k+
Newark
1+ parts
$0.266
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DigiKey
$1.650
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Mouser Electronics
$0.701
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Avnet
Arrow
$0.361
Verical
Chip1Stop
$0.395
EBV Elektronik
Farnell
$0.566
$0.391
Element14
$1.010
$0.699
Digiode
$0.321
Nova Conductors
$0.564
TME
$1.430
$0.661
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IBS Electronics
$0.561
J2 Sourcing AB
Cyclops Electronics Ltd
Vyrian
Chip Stock
Sensible Micro Corp
RLX Solution Inc.
ComSIT Distribution GmbH
Bristol Electronics
Connector Distribution Corp
Right Parts Inc.
Schukat
$0.337
$0.272
Pegasus Components GmbH
A&K Electronics
ACDS - Activité Composants Distribution Service
Dan-Mar Components
Elcom Components
Anansix
Connect4Technologies Inc.
Prism Electronics
Semi Source
Goldney Electronics S.L.
LittleDiode
Ampacity Inc.
$0.239
Semicontronic
$0.288
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Corphita
$0.304
Argo Parts USA
$0.547
Netroflash
$0.536
$0.525
Aztec Data Supply Inc.
$0.840
Corohmni
$0.969
IDEA Electronic Components Group
$1.056
$0.951
MKK Technologies
$1.986
DigiPath Technology Company
Epart123
$0.170
RC Electronics
Lixinc
Continental Prestige Electronics
$0.458
$0.411
A-Z Elektronik GmbH
Kepictronics
Alle Elektronik GmbH
Eastek
$0.280
GreenTree Electronics
S.R.D Solutions
Parana Technologies
$1.263
Robosynatics
Lucentia Tech
$101.475
Assy Fe
Plastic/epoxy material provides durability and protection for the components inside, making this FET reliable for long-term use.
N-channel FETs are known for their high efficiency and fast switching speeds, making this FET suitable for various applications.
With a high breakdown voltage, this FET can handle higher voltages without breakdown, ensuring stability and safety in high-power circuits.
The high pulsed drain current of 5 A allows this FET to handle sudden spikes in current without damage, making it suitable for applications with varying loads.
With a maximum power dissipation of 45 W, this FET can handle high power levels effectively, preventing overheating and ensuring reliability.
The high maximum operating temperature of 150°C allows this FET to withstand elevated temperatures, making it suitable for industrial and automotive applications.
Power Field Effect Transistors (FET) STD1NK80ZT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
STD1NK80ZT4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Packaging - Box Label Chg 28/Jul/2016
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
1N4148WS
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
RC0603FR-071KL
Yageo
Yageo's RC0603FR-071KL is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in electronics, it operates b/w -55 to 155 °C with a temperature coefficient of 100 ppm/°C.
RC0402FR-0710KL
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
BAV99
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SDR0604-101KL
Bourns
SDR0604-101KL by Bourns is a surface mount fixed inductor with a nominal inductance of 100 uH. It is a general purpose inductor suitable for power applications, with a max rated current of 0.52 A and a self-resonance frequency of 9 MHz.
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
1N4148
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
SMBJ18CA
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
LM317LMX/NOPB
Texas Instruments
LM317LMX/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max input-output voltage differential of 40V. It operates in temperatures ranging from -40°C to 125°C and has a max output current of 0.1A, making it suitable for various applications requiring precise voltage regulation.
2N7002
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
FDLL4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
General Diode
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N5819HW-7-F
SPC TECHNOLOGY/ MULTICOMP
BSZ160N10NS3GATMA1
Infineon Technologies
Infineon Technologies' BSZ160N10NS3GATMA1 is a power FET with N-channel configuration and a built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
NVMFS5113PLT1G
Onsemi
NVMFS5113PLT1G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 415A and an avalanche energy rating of 315mJ. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of MSL1.
IRLML6401TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
IRF540NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 33 A; Maximum Time At Peak Reflow Temperature (s): 30;
BSC026N08NS5ATMA1
Infineon Technologies' BSC026N08NS5ATMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 80V, max pulsed drain current of 400A, and low on-resistance of 0.0026 ohm. Ideal for switching applications in various industries.
FDS6890A
FDS6890A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage and 0.034 ohm RDS(ON). It features 2 elements with built-in diode, suitable for SWITCHING applications. This small outline transistor has a max operating temperature of 150°C and can handle up to 20A pulsed drain current.
LND150N8-G
Microchip Technology
LND150N8-G by Microchip is a N-CHANNEL FET with 0.03A IDM, ideal for SWITCHING applications. Operating in DEPLETION MODE, it has a 1.6W power dissipation and 1000 ohm RDS(on). With a peak temperature of 260C, it's suitable for surface mount designs in various electronic systems.
AUIRF5210STRL
AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
IRFZ44NSTRLPBF
IRFZ44NSTRLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). With a max power dissipation of 94W and operating temp of 175°C, it's suitable for high-power circuits requiring fast switching capabilities.
IRF840PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-220AB;
IRFP460
Thomson Consumer Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;
IRFP460LC
Vishay Intertechnology
Vishay Intertechnology's IRFP460LC is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 280W in a RECTANGULAR package with THROUGH-HOLE terminals.
IRF7493TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
IRFP460BPBF
Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.
IRFR4620TRLPBF
IRFR4620TRLPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It is used for switching applications and has a max pulsed drain current of 100A.
BSZ097N04LSGATMA1
Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
IRF640
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 125 W;
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (Abs) (ID): 18 A; JESD-609 Code: e3;
FDB3632
Onsemi's FDB3632 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 12A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 175 °C with an EAS of 337 mJ.
IRF9530
Harris Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN;
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STD12NF06LT4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Terminal Finish: MATTE TIN; Terminal Form: GULL WING;
STD10P6F6
STD10P6F6 by STMicroelectronics is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.116 ohm RDS(on), and operates in ENHANCEMENT MODE up to 175°C.
STD13NM60N
STD13NM60N by STMicroelectronics is an N-channel power FET with a min DS breakdown voltage of 600V. It has a max pulsed drain current of 44A and a max power dissipation of 90W. This transistor is commonly used for switching applications.
STD10NF10T4
STD10NF10T4 by STMicroelectronics is an N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 52A and a max power dissipation of 50W in a small outline package. Operating in enhancement mode, it has a max operating temperature of 175°C and on-resistance of 0.13 ohm.
STD11NM60ND
STD11NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 40A and EAS of 200mJ. This ENHANCEMENT MODE transistor has a 0.45 ohm Drain-Source On Resistance and can handle up to 90W power dissipation.
STD13NM60ND
STD13NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 44A and 0.38 ohm Drain-Source On Resistance. This ENHANCEMENT MODE transistor operates at up to 150°C and has a Matte Tin Terminal Finish.
STD18N55M5
STD18N55M5 by STMicroelectronics is a N-CHANNEL Power FET with 550V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 90W and can handle up to 14A drain current.
STD130N6F7
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STD16NF06LT4
STD16NF06LT4 by STMicroelectronics is an N-CHANNEL Power FET with 60V DS Breakdown Voltage and 96A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.085 ohm RDS(on), and 175°C max operating temp. Perfect for high-power circuit designs requiring efficient switching capabilities.
STD1NK60T4
STD1NK60T4 by STMicroelectronics is a N-CHANNEL power FET with a min DS breakdown voltage of 600V. It is suitable for switching applications and has a max drain current of 1A.
STD15NF10T4
STD15NF10T4 by STMicroelectronics is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 60A IDM, and 0.08 ohm RDS(on). With a max power dissipation of 70W and operating temperature of 175°C, it is ideal for high-power switching circuits.
STD13NM60N-H
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Terminal Finish: MATTE TIN; Maximum Drain Current (ID): 11 A;
STD10PF06T4
STD10PF06T4 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM and 125mJ EAS, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package style and Matte Tin finish, it offers high performance in various power management systems.
STD18N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STD13N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Transistor Application: SWITCHING; No. of Elements: 1;
STD100N10F7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
STD12NF06T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;
STD11N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Minimum Operating Temperature: -55 Cel; Terminal Form: GULL WING;
STD17NF25
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 100 mJ;
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