Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SEF120
STMicroelectronics
STMicroelectronics' SEF120 is a N-CHANNEL FET with 8A ID and 40W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems in automotive or industrial settings.
SINGLE
8 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
40 W
FET General Purpose Power
NO
2N3819-D27Z
Fairchild Semiconductor
2N3819-D27Z by Fairchild Semiconductor is a N-CHANNEL power FET with a max drain current of 0.05 A and max power dissipation of 0.35 W. It operates in enhancement mode and uses metal-oxide semiconductor technology. It is commonly used in applications requiring low-power switching or amplification.
.05 A
e3
.35 W
Matte Tin (Sn)
2SK3305-S-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
5 A
75 W
FQPF6N90CT
FQPF6N90CT by Fairchild Semiconductor is a N-CHANNEL Power FET with 6A max drain current and 56W max power dissipation. Ideal for applications requiring high power handling such as motor control systems or power supplies due to its enhancement mode operation and MOSFET technology.
6 A
56 W
VNP10N06-E
VNP10N06-E by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 42W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation, such as motor control systems or power management circuits.
10 A
42 W
RDX045N60FU6
ROHM
ROHM's RDX045N60FU6 is a single N-channel power FET with 4.5A max drain current and 35W max power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and reliability at up to 150°C operating temperature.
4.5 A
35 W
BLF6G20-180PN,112
NXP Semiconductors
N-CHANNEL; Surface Mount: NO; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
225 Cel
PHP165NQ08T,127
PHP165NQ08T,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 75 A and power dissipation of 250 W, operating up to 150 °C. This transistor is perfect for efficient power management in various electronic devices.
75 A
250 W
AOTF4N60
Alpha & Omega Semiconductor
AOTF4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 35W power dissipation. It operates in enhancement mode with a max temperature of 150°C. Ideal for power applications requiring high efficiency and performance.
4 A
AOTF5N50
AOTF5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 18A IDM and 203mJ EAS, suitable for power applications requiring high drain current and energy ratings. Ideal for use in circuits where low on-resistance and fast switching times are critical.
203 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
1.5 ohm
5.9 pF
TO-220AB
R-PSFM-T3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
18 A
THROUGH-HOLE
SILICON
70.4 ns
52.4 ns
AOTF7N65
AOTF7N65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 24A IDM, 347mJ EAS, and 1.56ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and fast switching times (ton:97ns, toff:128ns).
347 mJ
650 V
7 A
1.56 ohm
9 pF
38.5 W
24 A
SWITCHING
128 ns
97 ns
AOT480L
AOT480L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 180A ID and 333W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C, making it suitable for demanding industrial and automotive systems.
180 A
175 Cel
333 W
AOTF9N70
AOTF9N70 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A IDM, 154mJ EAS, and 1.2ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and can withstand temperatures from -55 to 150°C.
154 mJ
700 V
9 A
1.2 ohm
11 pF
50 W
33 A
AOI4126
AOI4126 by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 43A ID and 100W power dissipation. It operates in enhancement mode with a max temp of 175°C. Ideal for high-power applications requiring efficient switching capabilities.
43 A
100 W
FET General Purpose Powers
BUK652R7-30C,127
NXP Semiconductors' BUK652R7-30C,127 is a N-CHANNEL FET with 100A ID and 204W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C, making it suitable for demanding industrial environments.
100 A
204 W
BUK6507-75C,127
The BUK6507-75 °C,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 100 A and power dissipation of 204 W, operating efficiently up to 175 °C. Ideal for switching and amplification in various electronic circuits.
Tin (Sn)
BUK7510-55AL,127
NXP Semiconductors' BUK7510-55AL,127 is an N-channel Power FET with 122A max drain current and 300W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation up to 175°C, featuring metal-oxide semiconductor technology and single configuration.
122 A
300 W
BUK753R4-30B,127
BUK753R4-30B,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating efficiently up to 175 °C. Ideal for switching and amplification in various electronic circuits.
255 W
BUK7E07-55B,127
NXP Semiconductors' BUK7E07-55B,127 is an N-channel Power FET with 119A max drain current and 203W max power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temperature of 175°C.
119 A
203 W
TIN
BUK7E4R3-75C,127
The BUK7E4R3-75 °C,127 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 100 A and power dissipation of 333 W, operating up to 175 °C. Ideal for automotive and industrial power management solutions.
PSMN050-80PS,127
PSMN050-80PS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 22 A and power dissipation of 56 W, operating up to 175 °C. Perfect for efficient switching in various electronic devices.
22 A
2SK3700(F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 5 A; Maximum Drain Current (ID): 5 A;
260
150 W
30
2SK4021(Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 4.5 A; No. of Elements: 1;
20 W
2SK2719(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3 A
125 W
2SK2744(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
45 A
2SK2847(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
85 W
2SK2917(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 18 A;
90 W
2SK2995(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
30 A
2SK2967(F)
Toshiba's 2SK2967(F) is a N-CHANNEL Power FET with max ID of 30A and Pd of 150W. Ideal for high-power applications, it operates in enhancement mode at up to 150°C.
2SK3132(Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 50 A;
50 A
2SK4017(Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 5 A;
PSMN5R6-100XS,127
PSMN5R6-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 61 A and power dissipation of 60 W, operating up to 175 °C. Perfect for efficient energy management in various electronic devices.
61 A
60 W
AOW4S60
AOW4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 83W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
83 W
AOWF4S60
AOWF4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.
25 W
BUK653R3-30C,127
The BUK653R3-30 °C,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 100 A and power dissipation of 204 W, operating efficiently up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
PSMN7R0-100XS,127
PSMN7R0-100XS,127 from NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 55 A and power dissipation of 57 W, operating up to 175 °C. This makes it suitable for high-efficiency designs in automotive and industrial sectors.
55 A
57 W
TK12J60U(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 144 W; Maximum Drain Current (Abs) (ID): 12 A; Maximum Operating Temperature: 150 Cel;
12 A
144 W
TK20J60U(F)
Toshiba's TK20J60U(F) is an N-CHANNEL Power FET with 20A Drain Current and 190W Power Dissipation. Ideal for high-power applications, it operates in Enhancement Mode at up to 150°C, making it suitable for power supplies and motor control systems.
20 A
190 W
TK15J60U(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (Abs) (ID): 15 A; Maximum Drain Current (ID): 15 A;
15 A
170 W
PSMN016-100XS,127
PSMN016-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 32.1 A and power dissipation of 46.1 W, operating up to 175 °C. This MOSFET is perfect for efficient energy conversion in various electronic devices.
32.1 A
46.1 W
PSMN027-100XS,127
PSMN027-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 23.4 A and power dissipation of 41.1 W, operating up to 175 °C. This MOSFET excels in efficient energy conversion and control.
23.4 A
41.1 W
2SK3820-DL-E
Onsemi
2SK3820-DL-E by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 104A and EAS of 84.5mJ, making it suitable for high-power tasks. With an ID of 26A and 0.08ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation at up to 150 °C ambient temperature.
84.5 mJ
100 V
26 A
.08 ohm
110 pF
R-PSIP-T3
e6
IN-LINE
1.65 W
104 A
Tin/Bismuth (Sn/Bi)
PSMN013-100XS,127
PSMN013-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power management applications. It supports a max drain current of 35.2 A and power dissipation of 48.4 W, operating up to 175 °C. Perfect for efficient energy conversion in various electronic devices.
35.2 A
48.4 W
AOTF240L
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (ID): 85 A; No. of Elements: 1;
85 A
41 W
AOTF12N30
AOTF12N30 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM and 430mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 36W and -55 to 150 °C temperature range, it offers reliable performance in various electronic systems.
430 mJ
300 V
11.5 A
.42 ohm
36 W
29 A
PSMN5R0-100XS,127
PSMN5R0-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 67.5 A and power dissipation of 63.8 W, operating up to 175 °C. Perfect for automotive and industrial uses.
67.5 A
63.8 W
PSMN4R6-100XS,127
PSMN4R6-100XS,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 70.4 A and power dissipation of 63.8 W, operating up to 175 °C. Perfect for automotive and industrial uses, it ensures reliable performance in demanding environments.
70.4 A
BUK754R7-60E,127
NXP Semiconductors' BUK754R7-60E,127 is an N-channel Power FET with 100A max drain current and 234W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
234 W
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