Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DMG9N65CTI
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 13 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 9 A;
HIGH RELIABILITY
ISOLATED
SINGLE WITH BUILT-IN DIODE
650 V
9 A
.0013 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
13 W
30 A
AEC-Q101
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
30
SWITCHING
SILICON
IPW90R500C3FKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE; No. of Elements: 1;
388 mJ
900 V
11 A
.5 ohm
TO-247AD
24 A
DMG4N65CTI
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8.35 W; Minimum DS Breakdown Voltage: 650 V; Package Style (Meter): FLANGE MOUNT;
456 mJ
4 A
3 ohm
8.35 W
6 A
STFW1N105K3
STMicroelectronics
STFW1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 20W max power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power management systems or motor control circuits.
1.4 A
NOT SPECIFIED
20 W
FET General Purpose Powers
STP1N105K3
STP1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 60W max power dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 150 °C.
60 W
STP28NM60ND
STP28NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 92A IDM, and 0.15 ohm RDS(on). Ideal for SWITCHING applications due to its 190W power dissipation and ENHANCEMENT MODE operation.
50 mJ
DRAIN
600 V
23 A
.15 ohm
190 W
92 A
STULED656
STULED656 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for SWITCHING applications. It features 24A max pulsed drain current and 1.3ohm max drain-source resistance, operating in ENHANCEMENT MODE up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection offers reliable performance in various power applications.
1.3 ohm
TO-251
R-PSIP-T3
IN-LINE
30 W
STW28NM60ND
STW28NM60ND by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 92A IDM, 50mJ EAS, and 0.15ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a RECTANGULAR package style with FLANGE MOUNT and DRAIN case connection.
TO-247
NDD60N360U1-1G
Onsemi
NDD60N360U1-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 44A IDM, and 64mJ EAS. Ideal for applications requiring high power dissipation in single-channel configurations with built-in diode, such as industrial motor drives or power supplies.
64 mJ
.36 ohm
114 W
44 A
TIN
BUZ31H3046
Infineon BUZ31H3046 is a N-CHANNEL FET with 200V DS breakdown voltage and 58A IDM. Ideal for power applications, it features a built-in diode, 0.2 ohm RDS(on), and 200mJ EAS rating. Suitable for enhancement mode operation in various electronic systems.
AVALANCHE RATED
200 mJ
200 V
14.5 A
.2 ohm
TO-262AA
58 A
IPA50R190CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: ISOLATED; Terminal Finish: TIN; Package Body Material: PLASTIC/EPOXY;
339 mJ
500 V
.19 ohm
63 A
IPA50R650CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 102 mJ; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-220AB;
102 mJ
6.1 A
.65 ohm
19 A
IPA50R800CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: TIN; Terminal Position: SINGLE;
83 mJ
.8 ohm
15.5 A
STI400N4F6
STI400N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C.
120 A
175 Cel
300 W
STP400N4F6
STMicroelectronics' STP400N4F6 is a N-CHANNEL FET with 120A max drain current and 300W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C, utilizing metal-oxide semiconductor technology for efficient performance.
STP80N6F6
STMicroelectronics' STP80N6F6 is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for demanding environments requiring efficient power management.
110 A
150 W
STP80N70F6
STMicroelectronics' STP80N70F6 is a N-CHANNEL Power FET with 96A ID and 110W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single-channel configurations.
96 A
110 W
STW23N85K5
STW23N85K5 by STMicroelectronics is a N-CHANNEL FET with 19A max drain current and 250W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor technology and matte tin terminal finish.
250 W
Matte Tin (Sn)
R6030ENX
ROHM
ROHM R6030ENX is a N-CHANNEL FET with 600V DS breakdown voltage and 30A max drain current. Ideal for switching applications, it features a built-in diode, 0.13 ohm on-resistance, and 80A pulsed drain current. Suitable for enhancement mode operation in isolated case connections.
636 mJ
.13 ohm
80 A
10
SPP15N65C3HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified; No. of Elements: 1;
460 mJ
15 A
.28 ohm
45 A
Not Qualified
SPA15N65C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 45 A; Maximum Drain Current (ID): 15 A;
SPU03N60S5BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 1.4 ohm; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 5.7 A;
100 mJ
3.2 A
1.4 ohm
TO-251AA
5.7 A
SPU02N60C3BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED;
1.8 A
5.4 A
SPU02N60S5BKMA1
Infineon's SPU02N60S5BKMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for power applications. Featuring 3.2A IDM and 50mJ EAS, it operates in enhancement mode with 150°C max temp. Its single configuration with built-in diode and low 3ohm RDS(on) make it suitable for various power control circuits.
SPU04N60S5BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; JEDEC-95 Code: TO-251AA; No. of Elements: 1;
AVALANCHE RATED, HIGH VOLTAGE
130 mJ
4.5 A
.95 ohm
SPU03N60C3BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; JESD-30 Code: R-PSIP-T3; Minimum DS Breakdown Voltage: 600 V;
9.6 A
SPU01N60C3BKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; No. of Elements: 1; JESD-30 Code: R-PSIP-T3;
20 mJ
.8 A
6 ohm
1.6 A
IPP90R800C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 6.9 A;
157 mJ
6.9 A
IPP90R500C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; JEDEC-95 Code: TO-220AB; Maximum Drain-Source On Resistance: .5 ohm;
IPA90R1K2C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Pulsed Drain Current (IDM): 10 A; Terminal Form: THROUGH-HOLE;
68 mJ
3.1 A
1.2 ohm
10 A
IPA90R340C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 34 A;
678 mJ
.34 ohm
34 A
IPA90R800C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON; JESD-609 Code: e3;
IPA90R500C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
IPP90R340C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
IPP90R1K2C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 900 V; Avalanche Energy Rating (EAS): 68 mJ;
5.1 A
IPI90R1K2C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JEDEC-95 Code: TO-262AA;
IPI90R500C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 11 A; JESD-30 Code: R-PSIP-T3; Transistor Application: SWITCHING;
IPI90R800C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-262AA; Terminal Finish: TIN; Terminal Form: THROUGH-HOLE;
IPI90R1K0C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 900 V;
97 mJ
1 ohm
12 A
IPI041N12N3GAKSA1
Infineon Technologies' IPI041N12N3GAKSA1 is a power FET with N-channel polarity. It has a min DS breakdown voltage of 120V and can handle a max pulsed drain current of 480A. This transistor is commonly used for switching applications.
900 mJ
120 V
.0041 ohm
480 A
IPP041N12N3GXKSA1
IPP041N12N3GXKSA1 by Infineon is a N-CHANNEL FET with 120V DS breakdown voltage, 0.0041 ohm max RDS(on), and 480A IDM. Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is flange mount, making it suitable for high-power systems operating up to 175°C.
BTS282ZAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel; No. of Terminals: 7;
LOGIC LEVEL COMPATIBLE
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
.0095 ohm
R-PSFM-T7
7
320 A
BUZ73ALHXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 5.5 A; Minimum DS Breakdown Voltage: 200 V; Package Style (Meter): FLANGE MOUNT;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
120 mJ
5.5 A
.6 ohm
22 A
BUZ73LHXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Element Material: SILICON; Maximum Drain Current (ID): 7 A;
7 A
.4 ohm
28 A
BUZ31HXKSA1
Infineon BUZ31HXKSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage and 58A IDM. Ideal for power applications, it features a 0.2 ohm Drain-Source On Resistance, 150°C Max Operating Temp, and built-in diode in a PLASTIC/EPOXY package.
SPA07N60C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Additional Features: AVALANCHE RATED;
230 mJ
7.3 A
21.9 A
SPP07N60C3HKSA1
SPP07N60C3HKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max IDM of 21.9A and EAS of 230mJ. The transistor operates in ENHANCEMENT MODE, with a max ID of 7.3A and 0.6 ohm Drain-Source Resistance.
SPA11N65C3XKSA1
SPA11N65C3XKSA1 by Infineon is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 33A IDM, 340mJ EAS, and 0.38 ohm RDS(on). Operating in enhancement mode at up to 150°C, it has a single terminal position and isolated case connection.
340 mJ
.38 ohm
33 A
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