Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SIHG14N50D-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHG14N50D-GE3 is a N-channel power FET with 500V DS breakdown voltage and 38A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.4 ohm max RDS(on), and 56mJ EAS rating.
56 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
500 V
14 A
.4 ohm
METAL-OXIDE SEMICONDUCTOR
TO-247AC
R-PSFM-T3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
38 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
IPA50R280CE
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 231 mJ; JESD-30 Code: R-PSFM-T3;
231 mJ
ISOLATED
.28 ohm
TO-220AB
e3
42.9 A
TIN
IPA50R500CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
129 mJ
.5 ohm
24 A
IPA50R950CE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Finish: TIN; Transistor Element Material: SILICON;
68 mJ
.95 ohm
12.8 A
NTP5862NG
Onsemi
NTP5862NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS(ON). Ideal for power applications requiring high drain current handling capacity. Suitable for use in circuits where low on-resistance and high power dissipation are crucial.
205 mJ
60 V
98 A
50 A
.0057 ohm
175 Cel
115 W
335 A
FET General Purpose Power
STF15N65M5
STMicroelectronics
STF15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 44A IDM, and 0.34 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a built-in DIODE and has a max drain current of 11A.
160 mJ
650 V
11 A
.34 ohm
44 A
STF15N80K5
STF15N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 56A pulsed drain current and 0.375 ohm max on-resistance. The transistor operates in enhancement mode, with a max power dissipation of 35W at 150°C.
800 V
.375 ohm
150 Cel
35 W
56 A
MATTE TIN
STP15N65M5
STP15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 0.34 ohm RDS(on), operating in ENHANCEMENT MODE. The transistor has a single configuration with built-in diode, suitable for high-power RECTANGULAR package designs.
STW15N80K5
STW15N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. It features 14A max drain current, 0.375 ohm max on resistance, and 56A pulsed drain current. The transistor operates in enhancement mode with a max power dissipation of 190W at 150°C.
TO-247
190 W
Matte Tin (Sn)
TK6A60D(STA4,Q,M)
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Package Body Material: PLASTIC/EPOXY;
173 mJ
600 V
6 A
1.25 ohm
STFI13N95K3
STFI13N95K3 by STMicroelectronics is a N-CHANNEL FET with 10A ID and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for various electronic devices requiring efficient power management.
10 A
40 W
FET General Purpose Powers
STF11N65M5
STF11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 36A IDM, and 0.48 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. Operating temp ranges from -55 to 150 °C with 25W max power dissipation.
130 mJ
9 A
.48 ohm
-55 Cel
25 W
36 A
STF18N65M5
STF18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 60A IDM, and 0.22 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
210 mJ
15 A
.22 ohm
60 A
STF31N65M5
STF31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 30W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
22 A
30 W
STF34N65M5
STF34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 112A IDM, and 0.11 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE at up to 150 °C.
510 mJ
28 A
.11 ohm
6.3 pF
112 A
STFI260N6F6
STFI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A ID and 41.7W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
80 A
41.7 W
STI18N65M5
STI18N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 60A IDM, 210mJ EAS, and 0.22 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 110W at 150 °C.
TO-262AA
R-PSIP-T3
IN-LINE
110 W
STI57N65M5
STI57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 168A IDM, and 0.063 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 960mJ EAS rating.
960 mJ
42 A
.063 ohm
168 A
STP10P6F6
STP10P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 40A IDM, 80mJ EAS, and 0.116 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 175°C and can handle up to 30W power dissipation.
80 mJ
.116 ohm
P-CHANNEL
40 A
STP11N65M5
STP11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 36A IDM, and 0.48 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 85W. The transistor has a temp range of -55 to 150 °C and comes in a rectangular package with through-hole terminals.
85 W
STP36N55M5
STP36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A Drain Current, 0.08 ohm On Resistance, and 190W Power Dissipation in a RECTANGULAR package. Operating at up to 150°C, it offers reliable performance in various industrial settings.
550 V
33 A
.08 ohm
132 A
STP38N65M5
STP38N65M5 by STMicroelectronics is a Power FET with 650V DS Breakdown Voltage, 120A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
660 mJ
30 A
.095 ohm
120 A
STW20N65M5
STW20N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 72A IDM, and 0.19 ohm RDS. It's used for SWITCHING applications due to its 130W power dissipation, 150°C max temp, and METAL-OXIDE SEMICONDUCTOR technology.
270 mJ
18 A
.19 ohm
130 W
72 A
STW31N65M5
STW31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C, utilizing metal-oxide semiconductor technology for efficient performance.
150 W
STW34N65M5
STW34N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 112A IDM and 0.11 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various power electronics designs.
STW36N55M5
STW36N55M5 by STMicroelectronics is a N-CHANNEL FET with 550V DS Breakdown Voltage, 33A Drain Current, and 0.08 ohm On Resistance. Ideal for SWITCHING applications due to its 132A Pulsed Drain Current capability. Operating in ENHANCEMENT MODE, it has a max power dissipation of 190W at 150 °C.
STF12NK80Z
STF12NK80Z by STMicroelectronics is a N-CHANNEL FET with 10.5A max drain current and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring METAL-OXIDE SEMICONDUCTOR tech and matte tin finish for robust performance.
10.5 A
STY139N65M5
STY139N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 130A max drain current and 0.017 ohm on-resistance. Operating in enhancement mode, this MOSFET has a max pulsed drain current of 520A and an avalanche energy rating of 2400mJ.
2400 mJ
130 A
.017 ohm
520 A
DMG9N65CT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; No. of Elements: 1; Minimum DS Breakdown Voltage: 650 V;
HIGH RELIABILITY
.0013 ohm
260
AEC-Q101
30
STF25N80K5
STF25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, 78A IDM, and 0.26 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 40W Pd max. Suitable for high-power systems requiring efficient power management.
200 mJ
19.5 A
.26 ohm
78 A
STF32NM50N
STF32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. The transistor has a single configuration with built-in diode and comes in a PLASTIC/EPOXY package.
340 mJ
.13 ohm
88 A
STI360N4F6
STI360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
300 W
STP32NM50N
STP32NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 88A IDM, 340mJ EAS, and 0.13 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
STP360N4F6
STP360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates at up to 175°C temperature, featuring metal-oxide semiconductor technology.
STP7N80K5
STP7N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM, 88mJ EAS, and 110W Max Power Dissipation. The transistor operates in ENHANCEMENT MODE with a max temperature of 150 °C, making it suitable for high-power electronic systems.
88 mJ
1.2 ohm
STW25N80K5
STW25N80K5 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 78A Max Pulsed Drain Current, 200mJ Avalanche Energy Rating, and 0.26 ohm Max Drain-Source On Resistance. Suitable for high-power circuits requiring efficient switching capabilities.
250 W
STW32NM50N
STW32NM50N by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 88A IDM, and 0.13 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C temperature.
STW60NM50N
STW60NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 272A IDM, 551mJ EAS, and 0.043 ohm RDS(on). Operating in ENHANCEMENT MODE at up to 150 °C, it has a SILICON element and FLANGE MOUNT package style.
551 mJ
68 A
.043 ohm
272 A
STW78N65M5
STW78N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 276A pulsed drain current, 2000mJ avalanche energy rating, and 0.032ohm max on resistance. The transistor operates in enhancement mode with a max power dissipation of 450W at 150°C, making it suitable for high-power applications.
2000 mJ
69 A
.032 ohm
450 W
276 A
NDD01N60-1G
NDD01N60-1G by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 6A IDM, and 8.5 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance in a TO-252 package.
13 mJ
1.5 A
8.5 ohm
46 W
NDD02N40-1G
NDD02N40-1G by Onsemi is a Power FET with 400V DS Breakdown Voltage, 6.9A IDM, and 0.0055 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in circuits where N-channel MOSFETs with built-in diode are needed.
120 mJ
400 V
1.7 A
.0055 ohm
39 W
6.9 A
STP110N55F6
STMicroelectronics' STP110N55F6 is a single N-channel Power FET with 110A max drain current and 150W power dissipation. Utilizes metal-oxide semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
110 A
RCX300N20
ROHM
ROHM's RCX300N20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 140A max pulsed drain current and 0.0427 ohm max drain-source resistance. The transistor operates in enhancement mode with a max power dissipation of 40W, making it suitable for high-power circuits.
396 mJ
200 V
70 A
.0427 ohm
e1
140 A
TIN SILVER COPPER
10
RCX511N25
ROHM's RCX511N25 is a N-CHANNEL FET with 250V DS breakdown voltage and 51A max drain current. Ideal for switching applications, it features a built-in diode, 0.065 ohm max on resistance, and 204A pulsed drain current. Suitable for enhancement mode operation in various electronic devices.
197.9 mJ
250 V
51 A
.065 ohm
204 A
ZDX080N50
ROHM ZDX080N50 is a N-CHANNEL FET with 500V DS breakdown voltage, 8A max drain current, and 0.85 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 24A pulsed drain current. Package style: flange mount, terminal form: through-hole.
8 A
.85 ohm
STP9NM40N
STP9NM40N by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22.4A IDM, 140mJ EAS, and 0.79 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 150 °C temperature.
BULK: 2500
140 mJ
5.6 A
.79 ohm
2.3 pF
60 W
22.4 A
STW36NM60ND
STW36NM60ND by STMicroelectronics is a N-CHANNEL FET with 29A max drain current and 190W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR technology.
29 A
STY145N65M5
STY145N65M5 by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 552A Max Pulsed Drain Current, 2420mJ Avalanche Energy Rating, and 0.015 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 625W at 150°C.
2420 mJ
138 A
.015 ohm
625 W
552 A
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