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STI57N65M5

STMicroelectronics

STI57N65M5 by STMicroelectronics

STI57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 168A IDM, and 0.063 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 960mJ EAS rating.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,649 parts In-Stock

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Digiode

USA . 4,671 parts In-Stock

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Chip Stock

USA . 4,500 parts In-Stock

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Anansix

USA . 475 parts In-Stock

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475

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IDEA Electronic Components Group

UK . 1,738 parts In-Stock

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$1.582

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$1.424

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$1.582

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$1.424

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MKK Technologies

India . 1,651 parts In-Stock

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$2.976

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$2.976

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DigiPath Technology Company

USA . 1,651 parts In-Stock

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$2.976

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$2.976

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AZTECH Wire

Italy . 734 parts In-Stock

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$8.320

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734

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,173 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,205 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,927 parts In-Stock

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Corphita

USA . 4,124 parts In-Stock

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RC Electronics

USA . 2,443 parts In-Stock

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Perfect Parts

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Parana Technologies

USA . 141 parts In-Stock

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$1.892

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$1.892

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Overview

Unleash the power of innovation with the STI57N65M5 by STMicroelectronics, a high-quality Power Field Effect Transistor that delivers exceptional performance and reliability. Manufactured by industry leaders, this N-CHANNEL transistor is perfect for switching applications, offering a breakthrough in efficiency and functionality. With a robust design and built-in diode, this transistor ensures seamless operation and maximum durability. Elevate your projects with the STI57N65M5 and experience unmatched value and benefits that will take your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON-resistance than P-Channel FETs, making them more efficient for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient management of inductive loads, reducing the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in scenarios where rapid switching is required.

Minimum DS Breakdown Voltage: 650 V

Can handle high voltages, making it suitable for applications where voltage spikes may occur.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and efficient use of PCB space.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering for assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and can be easily controlled with positive voltage, making them versatile for various applications.

Maximum Pulsed Drain Current (IDM): 168 A

Capable of handling high current pulses, suitable for power applications with demanding current requirements.

Avalanche Energy Rating (EAS): 960 mJ

Has a high avalanche energy rating, ensuring reliability and protection against voltage transients.

No. of Terminals: 3

Simple and compact design with three terminals for easy installation and connection.

Package Style (Meter): IN-LINE

In-line package style allows for easy integration and mounting in various electronic circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high efficiency and reliability for power switching applications.

Transistor Element Material: SILICON

Silicon-based construction provides stability and high performance in a wide range of operating conditions.

Maximum Drain Current (ID): 42 A

Suitable for medium to high-power applications with the ability to handle substantial drain current.

Maximum Drain-Source On Resistance: 0.063 ohm

Low ON resistance reduces power dissipation and improves efficiency in switching applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures proper connection in the circuit.

Case Connection: DRAIN

Case connection at the drain terminal provides efficient heat dissipation and helps in maintaining the overall temperature of the FET.

Technical Specifications

Power Field Effect Transistors (FET) STI57N65M5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

960 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

42 A

Maximum Drain-Source On Resistance:

.063 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-262AA

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

168 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STI57N65M5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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