Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
STP10NM60ND
STMicroelectronics
STP10NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 32A max pulsed drain current and 0.6 ohm max drain-source resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 70W at 150 °C.
130 mJ
SINGLE WITH BUILT-IN DIODE
600 V
8 A
.6 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
70 W
32 A
FET General Purpose Power
NO
Matte Tin (Sn)
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STP11N52K3
STP11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology.
ULTRA-LOW RESISTANCE
170 mJ
525 V
10 A
.51 ohm
40 A
STP210N75F6
STP210N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.0037 ohm On Resistance, and 480A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
75 V
120 A
.0037 ohm
175 Cel
300 W
480 A
MATTE TIN
STP23NM50N
STP23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
254 mJ
500 V
17 A
.19 ohm
125 W
68 A
STP3LN62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
90 mJ
620 V
2.5 A
3 ohm
STP52N25M5
STP52N25M5 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 28A ID, and 0.065 ohm RDS(on). Ideal for SWITCHING applications due to its 112A IDM and 230mJ EAS. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
ULTRA LOW-ON RESISTANCE
230 mJ
250 V
28 A
.065 ohm
112 A
STP5N62K3
STP5N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 16.8A IDM, and 1.6Ω RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and ENHANCEMENT MODE operation at up to 150 °C.
120 mJ
4.2 A
1.6 ohm
NOT SPECIFIED
16.8 A
STP6N52K3
STP6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 20A IDM, and 1.2 ohm RDS(on). Ideal for SWITCHING applications due to its 70W Pdiss and 110mJ EAS ratings in ENHANCEMENT MODE operation.
110 mJ
5 A
1.2 ohm
20 A
STP80N70F4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 68 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
185 mJ
68 V
85 A
.0098 ohm
150 W
340 A
STU3LN62K3
STU3LN62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 10A IDM, 90mJ EAS, and 2.5A ID for efficient power management in ENHANCEMENT MODE operation. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various electronic systems.
TO-251
R-PSIP-T3
IN-LINE
STW23NM50N
STW23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM and 0.19 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a METAL-OXIDE SEMICONDUCTOR technology and comes in a RECTANGULAR package with THROUGH-HOLE terminals.
TO-247
STW34NM60ND
STW34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features 116A max pulsed drain current and 0.11 ohm max drain-source resistance. Operating in enhancement mode, it has a 210W power dissipation rating and can withstand up to 150°C temperature.
345 mJ
DRAIN
29 A
.11 ohm
210 W
116 A
STW36NM60N
STW36NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 29A ID. Ideal for SWITCHING applications, it has a max IDM of 116A and EAS of 345mJ. Operating in ENHANCEMENT MODE, it features 0.105 ohm Drain-Source On Resistance and can handle up to 210W power dissipation at 150 °C.
.105 ohm
1.75 pF
STW47NM60ND
STW47NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 255W and operates in ENHANCEMENT MODE up to 150 °C.
1000 mJ
35 A
.088 ohm
255 W
140 A
STW54NM65ND
STW54NM65ND by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 196A IDM, 0.065 ohm RDS(on), and 49A ID, operating in ENHANCEMENT MODE. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
850 mJ
650 V
49 A
196 A
TIN
STW60N65M5
STW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at 150 °C.
1400 mJ
46 A
.059 ohm
280 W
184 A
STW62NM60N
STW62NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 220A IDM, 65A ID, and 0.048 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
65 A
55 A
.048 ohm
450 W
220 A
STI24NM60N
STI24NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 300mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with METAL-OXIDE SEMICONDUCTOR technology and SILICON element material.
300 mJ
TO-262AA
STI300N4F6
STI300N4F6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A Drain Current, and 0.002 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temperature. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with 3 terminals.
40 V
160 A
.002 ohm
640 A
STW56NM60N
STW56NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.06 ohm On Resistance, and 180A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W at 150 °C.
45 A
.06 ohm
180 A
FET General Purpose Powers
STF11N65K3
STF11N65K3 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.85 ohm max drain-source resistance. This MOSFET operates in enhancement mode and has a max power dissipation of 35W, making it suitable for high-power applications.
212 mJ
ISOLATED
11 A
.85 ohm
35 W
NTDV3055L104-1G
Onsemi
NTDV3055L104-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 45A IDM, and 0.104 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and a built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a max power dissipation of 48W in a RECTANGULAR package.
61 mJ
60 V
12 A
.104 ohm
48 W
Tin (Sn)
STI11NM80
STI11NM80 by STMicroelectronics is a N-CHANNEL FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 400mJ EAS, operating in ENHANCEMENT MODE at up to 150 °C. With 0.4 ohm RDS(on) and 150W Pd, it's suitable for high-power circuits requiring reliable performance.
400 mJ
800 V
.4 ohm
44 A
STI260N6F6
STI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A ID, and 0.003 ohm RDS(on). Ideal for SWITCHING applications due to its 480A IDM and 300W Pd. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and Matte Tin finish.
.003 ohm
STI26NM60N
STI26NM60N by STMicroelectronics is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, 80A IDM, and 0.165 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor features a SINGLE configuration with BUILT-IN DIODE and operates in THROUGH-HOLE package style.
610 mJ
.165 ohm
80 A
SIHG73N60E-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHG73N60E-GE3 is a N-channel power FET with 600V DS breakdown voltage and 236A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.039 ohm max RDS(on), and 520W max power dissipation.
AVALANCHE RATED
2030 mJ
73 A
.039 ohm
TO-247AC
520 W
236 A
RCX450N20
ROHM
RCX450N20 by ROHM is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It has a max pulsed drain current of 180A and a max drain-source on resistance of 0.055 ohm. This transistor is commonly used for switching applications.
160 mJ
200 V
.055 ohm
e1
260
TIN SILVER COPPER
10
QJD1210011
Powerex
Powerex QJD1210011 is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A IDM, 0.025 ohm RDS(on), and SILICON CARBIDE technology. Package style is FLANGE MOUNT with 20 terminals in PLASTIC/EPOXY material.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
1200 V
100 A
.025 ohm
R-PUFM-X20
2
20
250 A
UNSPECIFIED
UPPER
SILICON CARBIDE
NDF08N50ZH
NDF08N50ZH by Onsemi is a N-CHANNEL FET with 8.5A max drain current and 35W power dissipation. Ideal for power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor tech and tin terminal finish.
8.5 A
NDF11N50ZH
NDF11N50ZH by Onsemi is a Power FET with 500V DS Breakdown Voltage, 44A IDM, and 0.52 ohm RDS(on). Ideal for applications requiring high power dissipation up to 39W in enhancement mode operation. Suitable for use in isolated case connections at temperatures up to 150 °C.
420 mJ
.52 ohm
39 W
NTP5860NLG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 283 W; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
735 mJ
130 A
.0036 ohm
283 W
660 A
STI13NM60N
STI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 11A ID and 90W power dissipation.
200 mJ
.36 ohm
90 W
STU13NM60N
STU13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 0.36 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The PLASTIC/EPOXY package with IN-LINE style and DRAIN connection makes it suitable for various power electronics designs.
STW12NK60Z
STW12NK60Z by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for various industrial and automotive uses due to its robust single-channel configuration.
STF130N10F3
STF130N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 184A IDM, and 0.0096 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
ULTRA LOW RESISTANCE
125 mJ
100 V
.0096 ohm
STFI26NM60N
STFI26NM60N by STMicroelectronics is a N-CHANNEL FET with 20A ID and 35W power dissipation. Ideal for high-power applications, it operates up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
STP130N10F3
STMicroelectronics STP130N10F3 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Max Drain Current, 0.0096 ohm RDS(on), and 175 °C Max Operating Temp. Suitable for high-power switching circuits due to its 450A IDM and 125mJ EAS ratings.
250 W
450 A
DMG4N65CT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9.14 W; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
HIGH RELIABILITY
456 mJ
4 A
9.14 W
6 A
AEC-Q101
30
IPU60R1K4C6
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Maximum Pulsed Drain Current (IDM): 8 A; Avalanche Energy Rating (EAS): 26 mJ;
26 mJ
1.4 ohm
TO-251AA
NP60N04MUK-S18-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
60 A
105 W
NP60N04NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Drain Current (ID): 60 A;
NP60N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NP89N055MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Maximum Drain Current (ID): 90 A; Peak Reflow Temperature (C): NOT SPECIFIED;
90 A
147 W
NP89N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;
NP90N04MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
176 W
NP90N04NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP90N055MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP90N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;
© 2023 All rights reserved
