Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
STI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A ID, and 0.003 ohm RDS(on). Ideal for SWITCHING applications due to its 480A IDM and 300W Pd. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and Matte Tin finish.
Median Price
$3.830
Lifecycle Status
Suppliers In-Stock
10
In-Stock Inventory
1k+
Arrow
1+ parts
$2.414
100+ parts
-
1k+ parts
10k+ parts
Chip1Stop
DigiKey
$6.540
$3.190
$2.673
Verical
Digiode
$2.293
Vyrian
Anansix
Bristol Electronics
Dan-Mar Components
ACDS - Activité Composants Distribution Service
IDEA Electronic Components Group
$1.029
$0.926
MKK Technologies
$1.934
DigiPath Technology Company
Corphita
$2.173
Component Stockers USA
$2.400
Metaverse IC Inc.
A-Z Elektronik GmbH
Microchip USA
QUARKTWIN TECHNOLOGY LTD
Authorized Procurement Solutions
Perfect Parts
Alle Elektronik GmbH
Parana Technologies
$1.230
Kepictronics
Provides good thermal properties and protection for the internal components, ensuring durability and reliability.
Offers better performance in terms of power efficiency and switching speed compared to P-channel FETs.
Simplifies circuit design and saves space by eliminating the need for an external diode.
Designed specifically for switching applications, providing fast and efficient performance.
Suitable for applications requiring a higher breakdown voltage, ensuring reliable operation.
Capable of handling high current spikes, making it suitable for demanding applications.
Can dissipate heat effectively, allowing for continuous operation without overheating.
Withstands high temperatures, making it suitable for industrial and automotive applications.
Power Field Effect Transistors (FET) STI260N6F6 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
STI260N6F6 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SS14
Vishay Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Electronic Devices
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Continental Device India
Sensitron Semiconductor
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
SMBJ18CA
General Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STMicroelectronics
SPC TECHNOLOGY/ MULTICOMP
KSZ9031RNXIA
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
PIC18F4550-I/ML
Microchip Technology
The Microchip Technology PIC18F4550-I/ML is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this chip offers efficient performance in compact designs.
2N2222A
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Meritek Electronics
2N7002DWH6327XTSA1
Infineon Technologies
2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.
2N7002-7-F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
ATMEGA328P-AU
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
Daco Semiconductor
Synsemi
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IRF640NSTRLPBF
Infineon's IRF640NSTRLPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A IDM, 247mJ EAS, and 0.15 ohm RDS(ON). Operating from -55 to 175 °C, this MOSFET has a max power dissipation of 150W in a small outline package.
IRF530A
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 75 W;
IPT059N15N3ATMA1
IPT059N15N3ATMA1 by Infineon Technologies is a N-CHANNEL FET with 150V DS breakdown voltage, 620A IDM, and 0.0059 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 375W.
IRF640
Samsung
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
FQD7P20TM
Onsemi
FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
ZXMP10A18KTC
Diodes Incorporated
ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
FDS6890A
FDS6890A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage and 0.034 ohm RDS(ON). It features 2 elements with built-in diode, suitable for SWITCHING applications. This small outline transistor has a max operating temperature of 150°C and can handle up to 20A pulsed drain current.
BSP295H6327XTSA1
BSP295H6327XTSA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 7.2A max pulsed drain current. It is used in enhancement mode applications, featuring a built-in diode, 0.5 ohm max RDS(on), and AEC-Q101 standard compliance for automotive electronics.
NTD5867NLT4G
NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
FDD8424H
Fairchild Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF3205ZPBF
IRF3205ZPBF by Infineon is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 440A IDM, 250mJ EAS, and 0.0065 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 170W at 175°C.
MRF151G
M/a-com
N-CHANNEL; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 40 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 40 A; Operating Mode: ENHANCEMENT MODE;
FDMS86101DC
FDMS86101DC by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 200A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 125W.
BSZ160N10NS3GATMA1
Infineon Technologies' BSZ160N10NS3GATMA1 is a power FET with N-channel configuration and a built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
IRLML6401PBF
IRLML6401PBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 33mJ EAS. With ENHANCEMENT MODE operation, it has a -55 to 150 °C temperature range and 0.05 ohm RDS(on). Ideal for compact designs with its SMALL OUTLINE package style.
G3R160MT12D
Genesic Semiconductor
Power Field-Effect Transistors;
FQB34N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
IRFR5305TRPBF
IRFR5305TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 175 °C. The PLASTIC/EPOXY package with GULL WING terminals offers high power dissipation of 110W in a small outline style.
TN2510N8-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; JESD-30 Code: R-PSSO-F3; Maximum Feedback Capacitance (Crss): 25 pF;
IRLML0030TRPBF-1
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
STI270N4F3
STI270N4F3 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 120A ID, and 0.0026 ohm RDS. Ideal for SWITCHING applications due to its 480A IDM and 1000mJ EAS ratings. Operating in ENHANCEMENT MODE, it has a max power dissipation of 330W at 175°C.
STI20N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain-Source On Resistance: .19 ohm; JESD-30 Code: R-PSIP-T3;
STI21N65M5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): 17 A;
STI200N6F3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
STI20N60M2-EP
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
STI20NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; No. of Terminals: 3; Transistor Element Material: SILICON;
STI21NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 600 V;
STI22NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; JESD-609 Code: e3;
STI23NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSIP-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STI23NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Pulsed Drain Current (IDM): 78 A;
STI24N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
STI24N60M6
STI24NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 17 A; No. of Elements: 1;
STI24NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
STI25NM60ND
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
STI26NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): IN-LINE; Avalanche Energy Rating (EAS): 610 mJ;
STI28N60M2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
Supply Digital Components
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