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NP60N04MUK-S18-AY

Renesas Electronics

NP60N04MUK-S18-AY by Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 270 parts In-Stock

1+ parts

$14.800

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270

$14.800

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Component Stockers USA

USA . 718 parts In-Stock

1+ parts

$99.990

100+ parts

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10k+ parts

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718

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 8,514 parts In-Stock

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8,514

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Technical Specifications

Power Field Effect Transistors (FET) NP60N04MUK-S18-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Renesas Electronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NP60N04MUK-S18-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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