Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK9515-60E,127
NXP Semiconductors
BUK9515-60E,127 from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 54 A and power dissipation of 96 W, making it ideal for high-performance applications in automotive and industrial sectors. With an operating temp up to 175 °C, it ensures reliability in demanding environments.
SINGLE
54 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
96 W
FET General Purpose Power
NO
TIN
BUK753R5-60E,127
BUK753R5-60E,127 by NXP Semiconductors is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 293 W, operating efficiently up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
120 A
293 W
BUK956R1-100E,127
BUK956R1-100E,127 by NXP is a single N-channel power FET designed for high-performance applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.
349 W
BUK9E1R8-40E,127
BUK9E1R8-40E,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
BUK952R8-60E,127
BUK952R8-60E,127 from NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 349 W, operating up to 175 °C. Ideal for demanding power management tasks in various electronic devices.
BUK7514-60E,127
BUK7514-60E,127 from NXP Semiconductors is a single N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 58 A and power dissipation of 96 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
58 A
PSMN8R5-100XSQ
PSMN8R5-100XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 49 A and power dissipation of 55 W, operating up to 175 °C. This transistor is perfect for automotive and industrial uses.
49 A
55 W
VNP49N04-E
STMicroelectronics
VNP49N04-E by STMicroelectronics is an N-CHANNEL power FET with a max drain current of 68A and a max power dissipation of 125W. It operates in enhancement mode and is suitable for applications requiring high current handling capabilities, such as motor control or power supply systems.
68 A
150 Cel
125 W
Matte Tin (Sn)
2SK4099LS-1E
Onsemi
The Onsemi 2SK4099LS-1E is an N-channel Power FET with a max drain current of 8.5A and power dissipation of 35W. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies or motor control systems at up to 150°C.
8.5 A
35 W
VQ1001P-E3
Vishay Intertechnology
Vishay Intertechnology's VQ1001P-E3 is an N-CHANNEL Power FET with 0.83A max drain current and 2W max power dissipation. Ideal for applications requiring enhancement mode operation, such as in power management systems or voltage regulation circuits. Operating up to 150°C, it utilizes metal-oxide semiconductor technology for efficient performance.
.83 A
2 W
FET General Purpose Powers
AOT284L
Alpha & Omega Semiconductor
AOT284L by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 211mJ EAS, and 0.0057 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175 °C.
211 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
80 V
105 A
.0057 ohm
48 pF
TO-220AB
R-PSFM-T3
3
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
150 W
400 A
THROUGH-HOLE
SWITCHING
SILICON
AOTF5N50FD
AOTF5N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 5A ID and 35W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems operating at temperatures up to 150°C.
5 A
BMS4007-1E
BMS4007-1E by Onsemi is a N-CHANNEL FET with 60A ID and 30W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with a single configuration design.
60 A
30 W
Tin (Sn)
PSMN3R9-60XSQ
PSMN3R9-60XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 75 A and power dissipation of 55 W, operating up to 175 °C. Perfect for automotive and industrial uses.
75 A
SFT1431-W
SFT1431-W by Onsemi is a N-CHANNEL Power FET with 11A ID and 15W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with TIN BISMUTH terminal finish.
11 A
e6
15 W
TIN BISMUTH
STP16N60M2
STP16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A max drain current and 110W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies due to its metal-oxide semiconductor technology and single configuration in enhancement mode.
12 A
110 W
STU16N60M2
STU16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A ID and 110W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies or motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C.
TK10A60W,S4VX
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
9.7 A
TK31N60W,S1VF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 30.8 A;
30.8 A
230 W
TK13E25D,S1X(S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 102 W; Maximum Drain Current (Abs) (ID): 13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
13 A
102 W
TK16A60W5,S4VX
Toshiba's TK16A60W5,S4VX is an N-CHANNEL FET with 15.8A ID, 40W power dissipation, and 150°C max operating temp. Ideal for power applications requiring high drain current and efficient heat dissipation in enhancement mode operation.
15.8 A
40 W
TK100L60W,VQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 797 W; No. of Elements: 1; Maximum Drain Current (ID): 100 A;
100 A
797 W
STI16N65M5
STI16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for SWITCHING applications due to its 90W power dissipation and ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
ULTRA-LOW RESISTANCE
200 mJ
650 V
.279 ohm
TO-262AA
R-PSIP-T3
IN-LINE
90 W
48 A
Not Qualified
STW16N65M5
STW16N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 48A IDM, and 0.279 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 12A ID and 90W power dissipation. Package style is flange mount with matte tin finish, suitable for high temperature environments up to 150 °C.
TO-247
NP80N04NLG-S18-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; JEDEC-95 Code: TO-262AA; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
40 V
80 A
.0048 ohm
NOT SPECIFIED
115 W
300 A
NP80N055MDG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 55 V;
55 V
.0069 ohm
200 A
NP82N04MDG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Additional Features: LOGIC LEVEL COMPATIBLE;
82 A
.0085 ohm
143 W
328 A
NP82N055MUG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 82 A;
.006 ohm
NP82N055NUG-S18-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 143 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
NDD02N60Z-1G
NDD02N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 9A IDM, and 4.8 ohm RDS(on). It's an N-CHANNEL transistor in PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and low on-resistance.
120 mJ
600 V
2.2 A
4.8 ohm
260
57 W
9 A
30
NDF06N60ZH
NDF06N60ZH by Onsemi is a Power FET with 600V DS Breakdown Voltage, 28A IDM, and 113mJ EAS. Ideal for applications requiring high power dissipation in enhancement mode operation. Suitable for use in circuits where low drain-source resistance and high current handling are essential.
113 mJ
ISOLATED
7.1 A
1.2 ohm
28 A
NTP5863NG
NTP5863NG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 383A IDM, and 0.0078 ohm RDS(ON). It is used in power applications requiring high drain current handling capabilities.
157 mJ
60 V
97 A
.0078 ohm
383 A
NTP5864NG
NTP5864NG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 252A IDM, and 0.0124 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-power applications. Ideal for circuits requiring high current handling and low on-resistance.
80 mJ
63 A
.0124 ohm
107 W
252 A
VS-FB190SA10
VS-FB190SA10 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 720A IDM, 700mJ EAS, and 0.0065 ohm Drain-Source On Resistance. With a max power dissipation of 568W and operating temperature of 150°C, it offers high performance in various industrial settings.
AVALANCHE RATED
700 mJ
100 V
190 A
.0065 ohm
R-PUFM-X4
4
568 W
720 A
UNSPECIFIED
UPPER
NTD4959NH-35G
NTD4959NH-35G by Onsemi is a N-channel Power FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for switching applications, it features 0.0125 ohm RDS(on) and 112.5mJ EAS rating. Package: PLASTIC/EPOXY, Configuration: SINGLE WITH DIODE, Technology: MOSFET.
112.5 mJ
30 V
.0125 ohm
130 A
IPA50R380CE
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
210 mJ
500 V
.38 ohm
30 A
STFI20NK50Z
STFI20NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 850mJ EAS, and 0.27 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with SILICON element material and ISOLATED case connection.
850 mJ
17 A
.27 ohm
STU65N3LLH5
STU65N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 260A IDM, and 0.0097 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
65 A
.0097 ohm
TO-251
50 W
260 A
STF11N52K3
STF11N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, 40A IDM, and 0.51 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. The transistor features a built-in diode and can handle up to 10A drain current.
170 mJ
525 V
10 A
.51 ohm
40 A
STF120NF10
STF120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 164A Max Pulsed Drain Current and 0.0105 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 45W at 175 °C.
550 mJ
41 A
.0105 ohm
45 W
164 A
MATTE TIN
STF16N50U
STF16N50U by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 60A IDM, 250mJ EAS, and 0.52 ohm RDS(on). Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals. Operating Mode: ENHANCEMENT MODE up to 150 °C.
250 mJ
15 A
.52 ohm
STF23NM50N
STF23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 30W at 150 °C.
254 mJ
.19 ohm
STF34NM60ND
STF34NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 116A pulsed drain current, 345mJ avalanche energy rating, and 0.11 ohm max on resistance. Package style is flange mount with isolated case connection.
345 mJ
29 A
.11 ohm
116 A
STF3LN62K3
STF3LN62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 10A IDM, and 90mJ EAS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Package style is FLANGE MOUNT with THROUGH-HOLE terminals in PLASTIC/EPOXY material.
90 mJ
620 V
2.5 A
3 ohm
STFI13NM60N
STFI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.
220 mJ
.36 ohm
44 A
STFW12N120K5
STFW12N120K5 by STMicroelectronics is a N-CHANNEL FET with 1200V DS breakdown voltage, 48A IDM, and 0.69 ohm RDS. It's used for switching applications due to its 63W power dissipation, ENHANCEMENT MODE operation, and built-in diode in a RECTANGULAR package.
1200 V
.69 ohm
63 W
STFW60N65M5
STFW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 63W at 150 °C.
1400 mJ
46 A
.059 ohm
184 A
STI6N62K3
STI6N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, 22A IDM, and 1.2ohm RDS(on). Ideal for SWITCHING applications due to its 90W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
ULTRA LOW-ON RESISTANCE
140 mJ
5.5 A
22 A
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