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VS-FB190SA10

Vishay Intertechnology

VS-FB190SA10 by Vishay Intertechnology

VS-FB190SA10 by Vishay Intertechnology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 720A IDM, 700mJ EAS, and 0.0065 ohm Drain-Source On Resistance. With a max power dissipation of 568W and operating temperature of 150°C, it offers high performance in various industrial settings.

Median Price

$21.153

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$21.153

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Vyrian

USA . 13,879 parts In-Stock

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Pegasus Components GmbH

Germany . 170 parts In-Stock

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170

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Rutronik

Germany . 140 parts In-Stock

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NexGen Digital

USA . 58 parts In-Stock

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R&J Components

USA . 50 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 815 parts In-Stock

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$18.504

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$18.504

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Continental Prestige Electronics

USA . 4,051 parts In-Stock

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$21.153

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$20.730

4,051

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$20.730

Netroflash

USA . 500 parts In-Stock

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$21.153

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$20.095

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$19.672

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$21.153

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$19.672

Ampacity Inc.

Singapore . 953 parts In-Stock

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$51.050

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Argo Parts USA

USA . 3,970 parts In-Stock

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Overview

Discover the ultimate power solution with the VS-FB190SA10 by Vishay Intertechnology, a leading manufacturer known for top-quality components. This Power FET is designed for switching applications, offering a high breakdown voltage of 100V and a maximum drain current of 190A. With its robust construction and enhanced performance, this N-Channel transistor provides superior reliability and efficiency. Ideal for a wide range of industrial and automotive applications, the VS-FB190SA10 delivers exceptional value, giving you the power you need to drive your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and efficiency characteristics compared to P-channel transistors, making this product a good choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing reverse current flow, enhancing the reliability and performance of the transistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor delivers efficient and reliable performance when rapidly turning on and off high power loads.

Minimum DS Breakdown Voltage: 100 V

The high minimum breakdown voltage ensures that the transistor can withstand high voltage operation, making it suitable for various high-power applications.

Maximum Pulsed Drain Current (IDM): 720 A

With a high pulsed drain current rating, this transistor can handle sudden surge currents, making it ideal for applications requiring high peak currents.

Avalanche Energy Rating (EAS): 700 mJ

The high avalanche energy rating indicates the ability of the transistor to withstand high-energy spikes, ensuring long-term reliability in demanding conditions.

Maximum Power Dissipation (Abs): 568 W

The high power dissipation rating allows the transistor to handle high power levels without overheating, ensuring stable operation under heavy loads.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor is capable of operating in high-temperature environments without performance degradation.

Maximum Drain Current (ID): 190 A

The high maximum drain current rating allows the transistor to handle large current flows, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.0065 ohm

The low drain-source on resistance helps in reducing power losses and improving efficiency in the transistor's operation, making it an excellent choice for power management applications.

Technical Specifications

Power Field Effect Transistors (FET) VS-FB190SA10 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

700 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

190 A

Maximum Drain-Source On Resistance:

.0065 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

720 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VS-FB190SA10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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