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STFI13NM60N

STMicroelectronics

STFI13NM60N by STMicroelectronics

STFI13NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, 44A IDM, and 0.36 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is IN-LINE with PLASTIC/EPOXY body material.

Median Price

$1.578

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2,493 parts In-Stock

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$1.115

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Chip1Stop

Japan . 2,493 parts In-Stock

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$2.040

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$2.040

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Verical

USA . 2,493 parts In-Stock

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2,493

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Digiode

USA . 255 parts In-Stock

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$1.047

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255

$1.047

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Vyrian

USA . 8,998 parts In-Stock

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Anansix

USA . 1,793 parts In-Stock

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IDEA Electronic Components Group

UK . 606 parts In-Stock

1+ parts

$0.464

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$0.417

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606

$0.464

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$0.417

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MKK Technologies

India . 930 parts In-Stock

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$0.872

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930

$0.872

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DigiPath Technology Company

USA . 930 parts In-Stock

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$0.872

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930

$0.872

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Corphita

USA . 822 parts In-Stock

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$0.992

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Component Stockers USA

USA . 4,998 parts In-Stock

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$1.260

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$1.260

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$1.260

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4,998

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$1.260

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AZTECH Wire

Italy . 516 parts In-Stock

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$13.770

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Kepictronics

USA . 40,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,729 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,313 parts In-Stock

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Perfect Parts

USA . 2,789 parts In-Stock

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Assy Fe

Spain . 1,400 parts In-Stock

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Parana Technologies

USA . 964 parts In-Stock

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$0.554

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$0.554

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Overview

Unleash the power of cutting-edge technology with the STFI13NM60N by STMicroelectronics. Crafted with precision and expertise, this Power FET offers exceptional performance in switching applications. Its N-Channel configuration and built-in diode ensure seamless operation, while its 600V breakdown voltage guarantees reliability. Whether you're designing industrial machinery or automotive systems, this transistor is your go-to solution for superior efficiency and durability. Elevate your projects with the STFI13NM60N and experience unparalleled quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and lower resistance, making them more efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode allows for easier circuit design and protection against reverse currents, adding convenience and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 600 V

The high breakdown voltage of 600V ensures the transistor can handle high voltages, providing safety and reliability in operation.

Package Shape: RECTANGULAR

Rectangular packaging allows for easy mounting and integration into various circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong mechanical connection, making it easier to solder and secure the transistor in place.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control of the transistor, enabling efficient switching and performance.

Maximum Pulsed Drain Current (IDM): 44 A

The high pulsed drain current rating of 44A ensures the transistor can handle short bursts of high current, suitable for demanding applications.

Avalanche Energy Rating (EAS): 220 mJ

The high avalanche energy rating of 220mJ makes the transistor resilient to voltage spikes and transient events, ensuring long-term reliability.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and integration into various circuit configurations.

Package Style (Meter): IN-LINE

In-line packaging makes it easy to align and mount the transistor on a circuit board, optimizing space and layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching speeds, ideal for power applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, suitable for a wide range of applications.

Maximum Drain Current (ID): 11 A

With a maximum drain current of 11A, the transistor can handle moderate to high power loads, suitable for various switching applications.

Maximum Drain-Source On Resistance: 0.36 ohm

The low drain-source on resistance of 0.36 ohms minimizes power loss and heat generation, ensuring efficient operation.

Terminal Position: SINGLE

Single terminal design simplifies circuit connections and ensures consistency in mounting and installation.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and enhances safety in high voltage applications.

Technical Specifications

Power Field Effect Transistors (FET) STFI13NM60N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

220 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

11 A

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

44 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STFI13NM60N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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