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VNP49N04-E

STMicroelectronics

VNP49N04-E by STMicroelectronics

VNP49N04-E by STMicroelectronics is an N-CHANNEL power FET with a max drain current of 68A and a max power dissipation of 125W. It operates in enhancement mode and is suitable for applications requiring high current handling capabilities, such as motor control or power supply systems.

Median Price

$2.360

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$2.360

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150

$2.360

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Vyrian

USA . 5,489 parts In-Stock

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5,489

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Digiode

USA . 3,015 parts In-Stock

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3,015

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Anansix

USA . 1,643 parts In-Stock

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1,643

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Pegasus Components GmbH

Germany . 30 parts In-Stock

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30

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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Holdelec - ElecDif-Pro

France . 6 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 226 parts In-Stock

1+ parts

$1.675

100+ parts

-

1k+ parts

$1.508

10k+ parts

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226

$1.675

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$1.508

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Argo Parts USA

USA . 2,139 parts In-Stock

1+ parts

$2.360

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2,139

$2.360

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Continental Prestige Electronics

USA . 363 parts In-Stock

1+ parts

$2.360

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$2.313

363

$2.360

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$2.313

MKK Technologies

India . 671 parts In-Stock

1+ parts

$3.150

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671

$3.150

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DigiPath Technology Company

USA . 671 parts In-Stock

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$3.150

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671

$3.150

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AZTECH Wire

Italy . 268 parts In-Stock

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$6.464

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268

$6.464

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Microchip USA

USA . 381 parts In-Stock

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$16.459

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381

$16.459

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Ampacity Inc.

Singapore . 410 parts In-Stock

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$56.050

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410

$56.050

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Kepictronics

USA . 13,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 1,268 parts In-Stock

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Parana Technologies

USA . 507 parts In-Stock

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$2.003

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507

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$2.003

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Overview

Experience power like never before with the VNP49N04-E by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and reliability in all their products. This N-CHANNEL power field effect transistor offers enhanced performance in a single configuration, making it perfect for various applications. With a maximum drain current of 68 A and a maximum power dissipation of 125 W, this product delivers exceptional power handling capabilities. Its metal-oxide semiconductor technology guarantees efficient operation even at high temperatures, up to 150°C. Choose the VNP49N04-E and unlock endless possibilities for your power needs.

Feature Benefit Bullets

Polarity

N-CHANNEL - This product's N-channel polarity allows for efficient conduction of current and ensures better overall performance.

Configuration

SINGLE - The single configuration of this product simplifies the design and implementation process, making it easier to use and integrate into various applications.

Operating Mode

ENHANCEMENT MODE - The enhancement mode operating mode of this power FET enables precise and reliable control over the current flow, offering increased efficiency and accuracy in power applications.

No. of Elements

1 - With a single element, this power FET provides a straightforward and compact solution for power management and control.

Maximum Drain Current (Abs) (ID)

68 A - The impressive maximum drain current rating of 68A ensures that this power FET can handle high-power applications, making it suitable for demanding tasks.

Maximum Power Dissipation (Abs)

125 W - The high power dissipation capability of 125W ensures stable and reliable performance even under heavy loads, making it a reliable choice for power-intensive projects.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - Utilizing metal-oxide semiconductor technology, this power FET offers low power consumption, fast switching speeds, and excellent thermal stability, making it an ideal choice for efficient power management.

Maximum Operating Temperature

150 °C - With a maximum operating temperature of 150°C, this power FET can withstand high-temperature environments, ensuring reliability and stability in demanding conditions.

Terminal Finish

Matte Tin (Sn) - The matte tin terminal finish enhances the product's durability and solderability, ensuring reliable connections and reducing the risk of oxidation, thus improving overall product longevity.

Maximum Drain Current (ID)

68 A - The high maximum drain current rating of 68A allows this power FET to handle significant power loads while maintaining efficient performance and preventing overheating.

Technical Specifications

Power Field Effect Transistors (FET) VNP49N04-E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

68 A

Maximum Drain Current (ID):

68 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

VNP49N04-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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