Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPA02N80C3XKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
AVALANCHE RATED, HIGH VOLTAGE
90 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
800 V
2 A
2.7 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
6 A
Not Qualified
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
SPA04N80C3XKSA1
Infineon's SPA04N80C3XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Features include 12A IDM, 170mJ EAS, and 1.3Ω RDS(on). With a max operating temp of 150°C, it suits various power control needs in industrial settings.
170 mJ
4 A
1.3 ohm
12 A
SPA11N80C3XKSA1
SPA11N80C3XKSA1 by Infineon is a N-CHANNEL FET with 800V DS breakdown voltage. Ideal for switching applications, it has 33A pulsed drain current and 0.45 ohm max on-resistance. Operating in enhancement mode, it features a built-in diode and can handle up to 150°C temperature.
AVALANCHE RATED
470 mJ
11 A
.45 ohm
33 A
SPI08N80C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Style (Meter): IN-LINE; Package Body Material: PLASTIC/EPOXY;
340 mJ
8 A
.65 ohm
TO-262AA
R-PSIP-T3
IN-LINE
24 A
SPP02N80C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Position: SINGLE; Additional Features: AVALANCHE RATED, HIGH VOLTAGE;
SPP04N80C3XKSA1
Infineon's SPP04N80C3XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. It features 12A IDM, 170mJ EAS, and 1.3 ohm RDS(on). The transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power systems.
SPP18P06PHXKSA1
SPP18P06PHXKSA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, 74.8A IDM, and 0.13 ohm RDS(on). It is used in power applications due to its 81.1W Power Dissipation, 151mJ EAS rating, and -55 to +175°C Operating Temperature range.
151 mJ
60 V
18.7 A
.13 ohm
175 Cel
P-CHANNEL
81.1 W
74.8 A
Other Transistors
SPA17N80C3XKSA1
Infineon's SPA17N80C3XKSA1 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for switching applications. Features include 17A max drain current, 0.29 ohm max on resistance, and 51A pulsed drain current. Suitable for enhancement mode operation in various power electronics systems.
670 mJ
17 A
.29 ohm
51 A
IPI60R099CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 800 mJ; Maximum Drain Current (ID): 31 A; Transistor Element Material: SILICON;
800 mJ
600 V
31 A
.099 ohm
93 A
IPA65R380E6XKSA1
Infineon's IPA65R380E6XKSA1 is a N-CHANNEL FET with 650V DS breakdown voltage, 0.38 ohm RDS(on), and 29A IDM. Ideal for switching applications, it operates in enhancement mode with a max temperature of 150°C. The transistor features a built-in diode and offers an EAS of 215mJ for robust performance.
215 mJ
650 V
.38 ohm
29 A
IPP65R380E6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Avalanche Energy Rating (EAS): 215 mJ; Maximum Operating Temperature: 150 Cel;
IPW65R080CFDFKSA1
Infineon's IPW65R080CFDFKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 137A IDM and 1160mJ EAS, it operates in ENHANCEMENT MODE with 0.08 ohm RDS(ON). With a max power dissipation of 391W and temp range of -55 to 150 °C, it's suitable for high-power systems.
1160 mJ
43.3 A
.08 ohm
TO-247
-55 Cel
391 W
137 A
IPA50R140CPXKSA1
Infineon's IPA50R140CPXKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 56A max pulsed drain current and 0.14 ohm max drain-source resistance. The transistor operates in enhancement mode, with a package style of flange mount and an operating temperature up to 150°C.
616 mJ
500 V
23 A
.14 ohm
56 A
IPA60R165CPXKSA1
Infineon's IPA60R165CPXKSA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 61A max pulsed drain current and 0.165 ohm max RDS(on). With a package style of flange mount and operating temperature up to 150°C, this MOSFET is suitable for high-power electronics.
522 mJ
21 A
.165 ohm
61 A
IPA60R385CPXKSA1
Infineon's IPA60R385CPXKSA1 is a N-CHANNEL FET with 650V DS breakdown voltage, 27A IDM, and 0.385 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.
227 mJ
9 A
.385 ohm
27 A
IPA90R1K0C3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): 5.7 A; Package Style (Meter): FLANGE MOUNT;
97 mJ
900 V
5.7 A
1 ohm
IPP039N04LGXKSA1
IPP039N04LGXKSA1 by Infineon Technologies is a N-CHANNEL FET with 40V DS Breakdown Voltage, 400A IDM, and 0.0052 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
LOGIC LEVEL COMPATIBLE
60 mJ
40 V
80 A
.0052 ohm
94 W
400 A
FET General Purpose Power
IPA65R600C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 18 A; JESD-609 Code: e3; Package Style (Meter): FLANGE MOUNT;
142 mJ
.6 ohm
18 A
IPI65R600C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING; JEDEC-95 Code: TO-262AA;
NOT SPECIFIED
IPP65R600C6XKSA1
IPP65R600C6XKSA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 18A IDM, 142mJ EAS, and 0.6 ohm RDS(on). Package style is FLANGE MOUNT with SILICON element material and operates up to 150°C.
IPS040N03LGAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
30 V
89 A
.0059 ohm
TO-251
IPS105N03LGAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1; No. of Terminals: 3;
30 mJ
DRAIN
35 A
.0105 ohm
245 A
IPS135N03LGAKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
20 mJ
30 A
.0135 ohm
210 A
IPI530N15N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 21 A; Qualification: Not Qualified; Maximum Operating Temperature: 175 Cel;
150 V
.053 ohm
84 A
IPP530N15N3GXKSA1
IPP530N15N3GXKSA1 by Infineon is a N-CHANNEL FET with 150V DS breakdown voltage, 84A IDM, and 0.053 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175°C.
IPP50R140CPXKSA1
IPP50R140CPXKSA1 by Infineon Technologies is a N-CHANNEL FET with 500V DS breakdown voltage. It has a max IDM of 56A and 0.14 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with an EAS of 616mJ.
IPI60R125CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 25 A; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE;
708 mJ
25 A
.125 ohm
82 A
IPI60R165CPAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified; Transistor Element Material: SILICON;
IPI60R299CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Package Shape: RECTANGULAR;
290 mJ
.299 ohm
34 A
IPP028N08N3GXKSA1
IPP028N08N3GXKSA1 by Infineon is a N-CHANNEL FET with 80V DS Breakdown Voltage, 0.0028 ohm RDS(on), and 100A ID. Ideal for SWITCHING applications due to its 400A IDM, EAS of 1430 mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON element material and TIN terminal finish.
1430 mJ
80 V
100 A
.0028 ohm
IPI030N10N3GXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; No. of Elements: 1; Minimum DS Breakdown Voltage: 100 V;
1000 mJ
100 V
.003 ohm
IPP04CN10NGXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 400 A;
.0042 ohm
IPP06CN10LGXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
480 mJ
.0062 ohm
MATTE TIN
IPP50CN10NGXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain Current (ID): 20 A; No. of Elements: 1;
29 mJ
20 A
.05 ohm
IPP50R199CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 17 A; JESD-609 Code: e3;
436 mJ
.199 ohm
40 A
IPP50R250CPXKSA1
Infineon's IPP50R250CPXKSA1 is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 31A max pulsed drain current and 0.25 ohm max drain-source resistance. The transistor operates in enhancement mode, with a package style of flange mount and an isolated case connection.
345 mJ
13 A
.25 ohm
IPP50R299CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 26 A; Terminal Form: THROUGH-HOLE;
289 mJ
26 A
IPP50R399CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.399 ohm
83 W
FET General Purpose Powers
IPP50R520CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 7.1 A; Terminal Finish: TIN; No. of Terminals: 3;
166 mJ
7.1 A
.52 ohm
15 A
IPP60R520CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
6.8 A
IPP60R600CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Maximum Drain Current (ID): 6.1 A; Transistor Element Material: SILICON;
144 mJ
6.1 A
IPA65R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .38 ohm; JESD-609 Code: e3; No. of Terminals: 3;
10.6 A
IPI65R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 10.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 650 V;
IPP65R380C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;
IPI600N25N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .06 ohm; Maximum Drain Current (ID): 25 A;
210 mJ
250 V
.06 ohm
IPI200N25N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Finish: TIN; Maximum Operating Temperature: 175 Cel; Package Style (Meter): IN-LINE;
320 mJ
64 A
.02 ohm
256 A
IPI320N20N3GAKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; Package Shape: RECTANGULAR; Terminal Finish: TIN;
190 mJ
200 V
.032 ohm
136 A
IPI110N20N3GAKSA1
IPI110N20N3GAKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 0.011 ohm Drain-Source On Resistance. It is used for SWITCHING applications, featuring a max IDM of 352A and EAS of 560mJ. Operating in ENHANCEMENT MODE, it has a max ID of 88A and can withstand up to 175°C temperature.
560 mJ
88 A
.011 ohm
352 A
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