Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
IPI80N04S403AKSA1
Infineon Technologies
IPI80N04S403AKSA1 by Infineon is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 320A IDM, and 0.0037 ohm RDS(on). It is used in power applications requiring high current handling capabilities.
200 mJ
SINGLE WITH BUILT-IN DIODE
40 V
80 A
.0037 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
320 A
NO
TIN
THROUGH-HOLE
SINGLE
SILICON
IPI80N04S4L04AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-PSIP-T3;
100 mJ
.0043 ohm
NOT SPECIFIED
IPI80N06S2L11AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 55 V; Terminal Form: THROUGH-HOLE; Package Style (Meter): IN-LINE;
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
280 mJ
55 V
.0147 ohm
IPI80P04P405AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; No. of Terminals: 3;
64 mJ
.0052 ohm
P-CHANNEL
AEC-Q101
IPI80P04P4L04AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .0071 ohm;
LOGIC LEVEL COMPATIBLE
60 mJ
.0071 ohm
IPI90N04S402AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): IN-LINE; Minimum DS Breakdown Voltage: 40 V; Terminal Form: THROUGH-HOLE;
475 mJ
90 A
.0025 ohm
360 A
IPP100N04S303AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Elements: 1;
ULTRA LOW RESISTANCE
898 mJ
100 A
.0028 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
400 A
IPP100N04S4H2AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 100 A; No. of Terminals: 3; Terminal Form: THROUGH-HOLE;
.0027 ohm
260
IPP100N06S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 100 A;
810 mJ
.0059 ohm
IPP120N04S302AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .0023 ohm; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-220AB;
1880 mJ
120 A
.0023 ohm
480 A
IPP120N04S401AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
750 mJ
.0019 ohm
IPP120N04S402AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; JESD-609 Code: e3;
480 mJ
.0021 ohm
IPP120P04P404AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE; Terminal Finish: TIN;
78 mJ
DRAIN
.0038 ohm
IPP120P04P4L03AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Moisture Sensitivity Level (MSL): 1; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
Tin (Sn)
IPP22N03S4L15AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 22 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
20 mJ
30 V
22 A
.0149 ohm
88 A
IPP47N10S33AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 188 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
AVALANCHE RATED
400 mJ
100 V
47 A
.033 ohm
188 A
IPP47N10SL26AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.04 ohm
IPP70N10S3L12AKSA1
IPP70N10S3L12AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 280A IDM, and 0.0123 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its robust design and high power dissipation capability.
154 mJ
70 A
.0123 ohm
175 Cel
125 W
280 A
FET General Purpose Power
IPP70N10SL16AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Terminal Finish: TIN; Maximum Pulsed Drain Current (IDM): 280 A;
700 mJ
.025 ohm
IPP77N06S212AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .012 ohm;
77 A
.012 ohm
308 A
IPP80N03S4L03AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Terminal Position: SINGLE; Package Style (Meter): FLANGE MOUNT;
260 mJ
IPP80N04S303AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Pulsed Drain Current (IDM): 320 A; Terminal Form: THROUGH-HOLE;
526 mJ
.0035 ohm
IPP80N04S306AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 125 mJ; Moisture Sensitivity Level (MSL): 1;
125 mJ
.0057 ohm
IPP80N04S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 200 mJ; No. of Terminals: 3;
IPP80N04S404AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; No. of Terminals: 3;
.0046 ohm
IPP80N06S2H5AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 80 A; Maximum Pulsed Drain Current (IDM): 320 A; Minimum DS Breakdown Voltage: 55 V;
.0055 ohm
IPP80N06S2L09AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 3; Maximum Drain-Source On Resistance: .0113 ohm;
370 mJ
.0113 ohm
IPP80N06S2L11AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-220AB; No. of Elements: 1;
IPP80P04P405AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0052 ohm; Maximum Pulsed Drain Current (IDM): 320 A;
IPP80P04P4L04AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
IPP80P04P4L06AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 320 A; Maximum Drain-Source On Resistance: .0067 ohm; No. of Terminals: 3;
31 mJ
.0067 ohm
IPA60R600P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 18 A; No. of Terminals: 3; Terminal Form: THROUGH-HOLE;
133 mJ
ISOLATED
600 V
.6 ohm
18 A
SWITCHING
BTS7904SAKSA1
N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 200 mJ; No. of Terminals: 5; Operating Mode: ENHANCEMENT MODE;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
40 A
.0205 ohm
R-PSFM-T5
2
5
N-CHANNEL AND P-CHANNEL
160 A
IPI100N08S207AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 810 mJ; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;
75 V
TO-262AB
IPI45N06S4L08AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 97 mJ;
97 mJ
60 V
45 A
.0079 ohm
180 A
IPI45P03P4L11AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; No. of Terminals: 3;
110 mJ
.0111 ohm
IPI70N10S312AKSA1
IPI70N10S312AKSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 280A IDM, and 0.0116 ohm RDS(on). It is used in power applications due to its high drain current capacity and low on-resistance. The transistor's built-in diode makes it suitable for enhancement mode operation in various electronic devices.
410 mJ
.0116 ohm
IPI80N06S208AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 450 mJ; Maximum Drain Current (ID): 80 A; Package Shape: RECTANGULAR;
450 mJ
.008 ohm
IPI80N06S2L05AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
800 mJ
.006 ohm
IPI80N06S405AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 152 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;
152 mJ
IPI80N06S407AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSIP-T3; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 320 A;
71 mJ
IPI80P03P4L04AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Transistor Element Material: SILICON; Terminal Position: SINGLE;
.007 ohm
IPI80P03P4L07AKSA1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
135 mJ
.0072 ohm
IPP100N04S204AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 400 A; Minimum DS Breakdown Voltage: 40 V; Package Style (Meter): FLANGE MOUNT;
.0036 ohm
IPP100N04S2L03AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
.0033 ohm
IPP100N08S2L07AKSA1
IPP100N08S2L07AKSA1 by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage, 0.0068 ohm RDS(ON), and 400A IDM. Ideal for power applications, it features a built-in diode, 810mJ EAS rating, and operates in enhancement mode. Suitable for high-current circuits due to its 100A ID and through-hole terminal form.
.0068 ohm
IPP100N10S305AKSA1
IPP100N10S305AKSA1 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0051 ohm Drain-Source On Resistance, and 400A Pulsed Drain Current. Ideal for power applications requiring high current handling capabilities in enhancement mode operation.
1445 mJ
.0051 ohm
IPP120N06S403AKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE; Operating Mode: ENHANCEMENT MODE;
392 mJ
.0032 ohm
© 2023 All rights reserved
