Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
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IRL530NL
International Rectifier
IRL530NL by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.12 ohm RDS(on), and 175°C max operating temp.
HIGH RELIABILITY
150 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
17 A
.12 ohm
METAL-OXIDE SEMICONDUCTOR
TO-262AA
R-PSIP-T3
e0
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
N-CHANNEL
79 W
60 A
Not Qualified
FET General Purpose Power
NO
TIN LEAD
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STW13NB60
STMicroelectronics
STW13NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A IDM, 700mJ EAS, and 0.54 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 190W at 150 °C.
AVALANCHE RATED
700 mJ
600 V
13 A
.54 ohm
TO-247
R-PSFM-T3
e3
150 Cel
FLANGE MOUNT
190 W
52 A
MATTE TIN
2382
Nte Electronics
The Nte Electronics 2382 is a single N-channel power FET with a min DS breakdown voltage of 100V and max drain current of 8A. Ideal for switching applications, it features an operating mode in enhancement mode technology with 0.5 ohm max drain-source resistance.
8 A
.5 ohm
TO-220AB
STP60NE06L-16
STP60NE06L-16 by STMicroelectronics is a N-channel FET with 60V DS breakdown voltage, 240A IDM, and 0.016 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
LOW THRESHOLD
400 mJ
60 V
.016 ohm
150 W
240 A
BUK7524-55,127
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Additional Features: ESD PROTECTION; Minimum DS Breakdown Voltage: 55 V;
ESD PROTECTION
80 mJ
55 V
45 A
.024 ohm
180 A
STP19NB20
STMicroelectronics STP19NB20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 76A max pulsed drain current and 0.18 ohm max drain-source resistance. With a package style of flange mount, it operates in enhancement mode at up to 150 °C.
580 mJ
200 V
19 A
.18 ohm
125 W
76 A
STP4NB50
STP4NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 220mJ avalanche energy rating. The transistor operates in enhancement mode, with a max power dissipation of 80W at 150 °C.
220 mJ
500 V
3.8 A
2.8 ohm
80 W
15.2 A
STP50NE08
STP50NE08 by STMicroelectronics is a N-CHANNEL FET with 80V DS Breakdown Voltage, 200A IDM, and 0.024 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C temperature range.
300 mJ
80 V
50 A
200 A
TIN
STP50NE10
STP50NE10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 300mJ EAS, and 0.027 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C, making it suitable for high-power circuits.
.027 ohm
STP5NB40
STP5NB40 by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage and 19A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 80W and operates in ENHANCEMENT MODE at up to 150 °C.
200 mJ
400 V
4.7 A
1.8 ohm
TPIC2701N
Texas Instruments
TPIC2701N by Texas Instruments is a N-CHANNEL FET with 7 elements, built-in diode, and 60V DS breakdown voltage. It's commonly used for switching applications due to its 3A pulsed drain current, 22mJ avalanche energy rating, and 0.9 ohm max on-resistance. Operating in enhancement mode at up to 150°C, it offers high performance in a compact IN-LINE package.
22 mJ
COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE
.5 A
.9 ohm
MS-001BB
R-PDIP-T16
7
16
NOT SPECIFIED
1.4 W
3 A
DUAL
VNP35N07FI
VNP35N07FI by STMicroelectronics is an N-channel Power FET with a 60V DS breakdown voltage and 0.035 ohm max RDS(on). It operates in enhancement mode with 800ns turn-on time and 1350ns turn-off time. Ideal for power management applications requiring high efficiency and performance.
COMPLEX
.035 ohm
40 W
1350 ns
800 ns
STP60NE06-16
STP60NE06-16 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 240A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.016 ohm max RDS(on). Operating in enhancement mode, this MOSFET has a max power dissipation of 150W at 175°C.
350 mJ
STW50NB20
STW50NB20 by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 50A Drain Current, and 0.055 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 280W Power Dissipation and 150 °C Operating Temperature.
1000 mJ
.055 ohm
280 W
NTD4965N-35G
Onsemi
NTD4965N-35G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 248A Pulsed Drain Current, and 0.01 ohm Drain-Source On Resistance. Ideal for high-power switching circuits requiring efficient performance in an IN-LINE package style.
60 mJ
30 V
68 A
.01 ohm
260
38.5 W
248 A
30
NTD4969N-35G
NTD4969N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 150A IDM, and 0.019 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with built-in DIODE. Operating at up to 175 °C, it has a max power dissipation of 26.3W.
15 mJ
41 A
9.4 A
.019 ohm
26.3 W
150 A
NTD5862N-1G
NTD5862N-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 335A IDM, and 0.0057 ohm RDS. Ideal for applications requiring high drain current handling in enhancement mode operation. Package style: IN-LINE, Terminal finish: TIN, Case connection: DRAIN.
205 mJ
90 A
.0057 ohm
335 A
STP20NE06L
STP20NE06L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 100mJ EAS, and 0.085 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 70W at 175 °C.
100 mJ
20 A
.085 ohm
70 W
80 A
STP4NB80
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
230 mJ
800 V
4 A
3.3 ohm
100 W
16 A
STW80NE06-10
STW80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.01 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has an EAS of 350mJ and can handle up to 180W power dissipation.
180 W
320 A
STP80NE06-10
STP80NE06-10 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a built-in diode, 320A pulsed drain current, and 0.01 ohm max on-resistance. Suitable for enhancement mode operation in various power electronics systems.
250 mJ
SUP85N03-3M6P-GE3
Vishay Intertechnology
Vishay Intertechnology's SUP85N03-3M6P-GE3 is a N-channel Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for switching applications, it features 0.0036 ohm RDS(on) and 101mJ EAS rating. Suitable for high-power operations in various electronic devices.
101 mJ
85 A
.0036 ohm
78.1 W
120 A
SPP47N10
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Pulsed Drain Current (IDM): 188 A; Maximum Operating Temperature: 175 Cel;
47 A
.033 ohm
175 W
188 A
SPU18P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Drain Current (ID): 18.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
18.6 A
.13 ohm
TO-251
P-CHANNEL
74.4 A
Other Transistors
C2M0025120D
Wolfspeed
Wolfspeed C2M0025120D is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Features include 250A max pulsed drain current, 0.034 ohm max RDS(on), and -55 to 150°C operating temperature range. Suitable for high-power systems requiring efficient and reliable performance.
1200 V
.034 ohm
-55 Cel
250 A
SILICON CARBIDE
BTS110NKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
10 A
.2 ohm
40 A
BTS113AE3064NKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
11.5 A
.17 ohm
46 A
CAS300M12BM2
CAS300M12BM2 by Wolfspeed is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements with built-in diode for switching applications. Operating in enhancement mode, it has a max pulsed drain current of 1500A and 0.0567 ohm drain-source on resistance.
ISOLATED
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
.0567 ohm
113 pF
R-XUFM-X7
2
-40 Cel
UNSPECIFIED
1500 A
UPPER
IXTN79N20
IXYS Corporation
IXTN79N20 by IXYS Corp is a N-CHANNEL FET with 200V DS Breakdown Voltage, 79A ID, and 0.025 ohm RDS. Ideal for SWITCHING applications due to its 340A IDM and 350W Pd capabilities. Package style is FLANGE MOUNT with SILICON element material and ENHANCEMENT MODE operation at up to 150°C.
79 A
.025 ohm
R-PUFM-X4
4
400 W
350 W
340 A
NICKEL
IXTH75N10
IXTH75N10 by IXYS Corp is a N-CHANNEL FET with 100V DS Breakdown Voltage, 75A ID, and 0.02 ohm RDS. It's used for SWITCHING applications due to its 300A IDM and 250W Pd. The PLASTIC/EPOXY package with THROUGH-HOLE terminals makes it suitable for various power electronics designs.
75 A
.02 ohm
TO-247AD
300 W
250 W
300 A
IXTN21N100
IXTN21N100 by IXYS Corp is a N-CHANNEL FET with 1000V DS breakdown voltage, 84A IDM, and 0.55 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with max power dissipation of 520W. The transistor features a single configuration with built-in diode and comes in a rectangular package shape.
1000 V
21 A
.55 ohm
520 W
84 A
IRF630FP
The STMicroelectronics IRF630FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 25W, this transistor has a 0.4 ohm Drain-Source On Resistance and can handle up to 9A drain current.
160 mJ
9 A
.4 ohm
25 W
36 A
STP45NE06
STP45NE06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM, 150mJ EAS, and 0.028 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with max temp of 175 °C, making it suitable for high-power circuits.
.028 ohm
STP4NB100
STP4NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15.2A IDM, 360mJ EAS, and 125W Max Power Dissipation. Suitable for high-power ENHANCEMENT MODE operations in various electronic systems.
360 mJ
4.4 ohm
STW8NB100
STW8NB100 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 1000V breakdown voltage, 29.2A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
7.3 A
1.45 ohm
TO-247AC
29.2 A
STW11NB80
STW11NB80 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 11 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 190 W. Ideal for high-voltage circuits, it ensures reliable performance in demanding environments.
500 mJ
11 A
.8 ohm
44 A
STW20NB50
STW20NB50 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 500V breakdown voltage and 20A max drain current. It offers a low on-resistance of 0.25Ω and can handle up to 250W power dissipation. This versatile transistor operates efficiently in high-temperature environments up to 150 °C.
.25 ohm
75 pF
57 ns
IXFH32N50Q
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Package Body Material: PLASTIC/EPOXY; Avalanche Energy Rating (EAS): 1500 mJ;
1500 mJ
32 A
.16 ohm
360 W
128 A
IXFN48N50U2
IXYS Corporation's IXFN48N50U2 is a N-CHANNEL FET with 500V DS breakdown voltage and 48A max drain current. Ideal for switching applications, it operates in enhancement mode with 192A pulsed drain current. The transistor features a built-in diode, 0.1 ohm max on-resistance, and can handle up to 520W power dissipation.
48 A
.1 ohm
192 A
IXFK55N50
IXYS Corporation's IXFK55N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 55A max drain current. Ideal for switching applications, it features a built-in diode, 220A pulsed drain current, and 0.09 ohm max on resistance.
55 A
.09 ohm
TO-264AA
560 W
220 A
IXFN80N50
IXYS Corporation's IXFN80N50 is a N-CHANNEL FET with 500V DS breakdown voltage and 320A IDM. Ideal for switching applications, it has a max power dissipation of 700W, 0.055 ohm RDS(on), and operates in the -55 to 150 °C temperature range.
6000 mJ
700 W
STP7NB60
STP7NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 28.8A pulsed drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode at max 150 °C temperature. With 1.2 ohm RDS(on) and 125W power dissipation, it offers reliable performance in various power electronics designs.
7.2 A
1.2 ohm
21 pF
28.8 A
39 ns
STP80NE03L-06
STP80NE03L-06 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.
600 mJ
.009 ohm
700 pF
405 ns
STP3NB100
STP3NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS breakdown voltage, 12A IDM, and 244mJ EAS. Ideal for switching applications due to its single configuration with built-in diode and 6Ω RDS(on). Operating in enhancement mode, it can handle up to 100W power dissipation at a max temp of 150 °C.
244 mJ
6 ohm
12 A
STE26NA90
STE26NA90 by STMicroelectronics is a N-CHANNEL Power FET with 900V DS Breakdown Voltage and 26A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 104A Pulsed Drain Current, and operates in ENHANCEMENT MODE.
3000 mJ
900 V
26 A
.3 ohm
R-XUFM-X4
450 W
104 A
UL RECOGNIZED
STP12PF06
STP12PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 200mJ EAS, and 0.2 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W at 175°C.
60 W
STW15NB50
STW15NB50 by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for SWITCHING applications. It features 58.4A max pulsed drain current and 850mJ avalanche energy rating. Operating in enhancement mode, it has a max power dissipation of 190W and can handle up to 150 °C operating temperature.
850 mJ
14.6 A
.36 ohm
58.4 A
IRF640FP
STMicroelectronics' IRF640FP is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current, 280mJ Avalanche Energy Rating, and 0.18 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 40W at 150 °C.
280 mJ
18 A
72 A
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