Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STH15NB50FI
STMicroelectronics
STH15NB50FI by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58.4A IDM, 850mJ EAS, and 0.36 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 80W and can handle up to 150 °C.
AVALANCHE RATED
850 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
10.5 A
.36 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSFM-T3
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
80 W
58.4 A
Not Qualified
FET General Purpose Power
NO
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
FQA19N20L
Fairchild Semiconductor
FQA19N20L by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 100A and EAS of 250mJ, making it suitable for high-power operations. With a 0.14 ohm RDS(on), this MOSFET offers efficient performance in ENHANCEMENT MODE at up to 150°C.
250 mJ
200 V
23 A
25 A
.14 ohm
e3
190 W
100 A
MATTE TIN
IPZ65R095C7
Infineon Technologies
IPZ65R095C7 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 24A ID. Ideal for SWITCHING applications, it features a built-in diode, 100A IDM, and 0.095 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 128W and can withstand temperatures from -55 to 150 °C.
118 mJ
650 V
24 A
.095 ohm
TO-247
R-PSFM-T4
4
-55 Cel
128 W
TIN
FDP4020P
FDP4020P by Fairchild Semiconductor is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 16A Drain Current, and 0.08 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 37.5W. The transistor operates at up to 175°C and has a package style of FLANGE MOUNT.
20 V
16 A
.08 ohm
TO-220AB
175 Cel
P-CHANNEL
37.5 W
48 A
Other Transistors
SQP90P06-07L_GE3
Vishay Intertechnology
Vishay Intertechnology's SQP90P06-07L_GE3 is a P-channel Power FET with 60V DS breakdown voltage and 120A max drain current. Ideal for applications requiring high power handling, such as industrial motor control systems or automotive power management. Features include single configuration with built-in diode and 0.0067 ohm max on-resistance.
320 mJ
60 V
120 A
.0067 ohm
480 A
STP6NC60
STP6NC60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 6A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
600 V
6 A
1.2 ohm
125 W
IPA65R190C7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 57 mJ; Maximum Drain-Source On Resistance: .19 ohm; Package Body Material: PLASTIC/EPOXY;
57 mJ
8 A
.19 ohm
49 A
APT40SM120B
Microsemi
Microsemi's APT40SM120B is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 100A max pulsed drain current and 0.1 ohm max drain-source resistance. Suitable for enhancement mode operation in various power electronics systems.
2500 mJ
DRAIN
1200 V
41 A
.1 ohm
SILICON CARBIDE
STP70NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Terminal Finish: Matte Tin (Sn); Terminal Position: SINGLE;
500 mJ
30 V
70 A
.0095 ohm
100 W
280 A
Matte Tin (Sn)
STE180NE10
STE180NE10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 360A and EAS of 720mJ. Operating in ENHANCEMENT MODE, this transistor has a max ID of 180A and RDS(on) of 6 ohm, making it suitable for high-power tasks.
720 mJ
100 V
180 A
6 ohm
R-PUFM-X4
360 W
360 A
NICKEL
UNSPECIFIED
UPPER
SPP07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Minimum DS Breakdown Voltage: 600 V; Avalanche Energy Rating (EAS): 230 mJ;
230 mJ
7.3 A
.6 ohm
83 W
14.6 A
STP60NF03L
STP60NF03L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
LOW THRESHOLD
650 mJ
60 A
.015 ohm
240 A
STP6NB90
STP6NB90 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 900V breakdown voltage, 5.8A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
HIGH VOLTAGE
900 V
5.8 A
2 ohm
e0
135 W
TIN LEAD
STP80NF55-06FP
STP80NF55-06FP by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 240A IDM, and 0.0065 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 175°C max temp. Package: PLASTIC/EPOXY, RECTANGULAR shape, THROUGH-HOLE terminals.
1300 mJ
55 V
.0065 ohm
50 W
STP80NF55L-06
STP80NF55L-06 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic devices.
LOGIC LEVEL COMPATIBLE
80 A
.008 ohm
210 W
320 A
STB80NF55-06-1
STB80NF55-06-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient power management in various electronic circuits.
TO-262AA
R-PSIP-T3
IN-LINE
STW60NE10
STW60NE10 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 60 A, breakdown voltage of 100 V, and power dissipation up to 180 W. Ideal for high-performance power management in various electronic devices.
.022 ohm
TO-247AC
180 W
STP3N62K3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Terminal Position: SINGLE; Terminal Finish: MATTE TIN;
100 mJ
620 V
2.7 A
2.5 ohm
45 W
10.8 A
FQPF9N15
FQPF9N15 by Fairchild Semiconductor is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27.6A Max Pulsed Drain Current, 80mJ Avalanche Energy Rating, and 0.4 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 44W at 175°C.
80 mJ
150 V
6.9 A
.4 ohm
44 W
27.6 A
IXFR24N50Q
IXYS Corporation
IXYS Corporation's IXFR24N50Q is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 96A max pulsed drain current, 0.23 ohm max on-resistance, and 150°C max operating temperature. The transistor has a single configuration with built-in diode in a plastic/epoxy package suitable for high-power operations.
1500 mJ
22 A
.23 ohm
250 W
96 A
SPP80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
810 mJ
.0034 ohm
300 W
SPP80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0038 ohm
SPP80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; Transistor Element Material: SILICON;
40 V
.0037 ohm
SPP80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
.0051 ohm
SPP80N06S2-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; JESD-30 Code: R-PSFM-T3; Additional Features: AVALANCHE RATED;
450 mJ
215 W
SPP80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
800 mJ
.006 ohm
SPP80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Avalanche Energy Rating (EAS): 450 mJ; JESD-609 Code: e3;
.01 ohm
SPP80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 80 A;
75 V
.0074 ohm
NOT APPLICABLE
SPP80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
.009 ohm
STB80NF03L-04-1
STB80NF03L-04-1 by STMicroelectronics is a N-channel Power FET with 30V DS breakdown voltage, 320A IDM, and 0.0055 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 300W and can handle up to 80A drain current.
2300 mJ
.0055 ohm
STD17NF03L-1
STD17NF03L-1 by STMicroelectronics is a N-channel Power FET with 30V DS Breakdown Voltage and 68A IDM. Ideal for switching applications, it features a built-in diode, 0.06 ohm RDS(on), and 20W Pdiss. Suitable for enhancement mode operation in various electronic devices.
200 mJ
17 A
.06 ohm
TO-251AA
20 W
68 A
STF4N62K3
STF4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 25W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
3.8 A
1.95 ohm
25 W
15.2 A
STI4N62K3
STI4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS breakdown voltage, ideal for switching applications. It features 15.2A max pulsed drain current and 70W power dissipation, operating in enhancement mode at up to 150 °C.
70 W
STP260N6F6
STP260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.003 ohm On Resistance, and 300W Power Dissipation in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max temperature of 175 °C and is suitable for high-power electronic systems.
.003 ohm
STP4N62K3
STP4N62K3 by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 15.2A Max Pulsed Drain Current and 70W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
STQ3N45K3-AP
STQ3N45K3-AP by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Max Pulsed Drain Current and 3.8 ohm Max RDS(on), operating in ENHANCEMENT MODE at up to 150 °C.
450 V
.6 A
3.8 ohm
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
2.5 W
2.4 A
BOTTOM
STU3N45K3
STU3N45K3 by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, suitable for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 27W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.
1.8 A
TO-251
27 W
7.2 A
SPU07N60S5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 7.3 A;
AVALANCHE RATED, HIGH VOLTAGE
SPU09P06PL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
70 mJ
9.7 A
.25 ohm
42 W
38.8 A
SPU30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
30 A
.075 ohm
STP22NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
88 A
STP35NF10
STP35NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.035 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with a max power dissipation of 100W.
300 mJ
35 A
40 A
.035 ohm
160 A
STP40NS15
STP40NS15 by STMicroelectronics is a N-CHANNEL FET with 150V DS Breakdown Voltage, 40A Max ID, and 0.052 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 160A IDM and 140W Pd.
.052 ohm
140 W
STP315N10F7
STP315N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0027 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates at -55 to +150 °C.
1000 mJ
.0027 ohm
720 A
AEC-Q101
STF16NK60Z
STF16NK60Z by STMicroelectronics is a N-CHANNEL FET with 620V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM and 0.42 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150 °C. The transistor's package is RECTANGULAR with THROUGH-HOLE terminals, offering 40W Pdiss and EAS of 360mJ.
360 mJ
14 A
.42 ohm
40 W
56 A
STP150N3LLH6
STP150N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 525mJ EAS, and 0.0049 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 110W at 175 °C.
525 mJ
.0049 ohm
110 W
NTE2395
Nte Electronics
NTE2395 by Nte Electronics is a Power FET with 60V DS Breakdown Voltage, 200A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
50 A
.028 ohm
150 W
200 A
NTE2987
NTE2987 by Nte Electronics is a Power FET with 100V DS Breakdown Voltage, 80A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE. Features N-CHANNEL configuration in PLASTIC/EPOXY package with THROUGH-HOLE terminals.
FAST SWITCHING
120 mJ
20 A
.12 ohm
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