Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IPP070N08N3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 80 V; Avalanche Energy Rating (EAS): 150 mJ;
150 mJ
SINGLE WITH BUILT-IN DIODE
80 V
80 A
.007 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
136 W
320 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
STB141NF55-1
STMicroelectronics
STB141NF55-1 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 55 V. It operates in enhancement mode with a low on-resistance of just 0.008 Ω. This robust transistor supports high power dissipation up to 300 W, making it suitable for demanding environments.
1300 mJ
DRAIN
55 V
.008 ohm
290 pF
TO-262AA
R-PSIP-T3
-55 Cel
IN-LINE
300 W
Matte Tin (Sn)
STF15NM60ND
STF15NM60ND by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
300 mJ
ISOLATED
600 V
14 A
.299 ohm
150 Cel
30 W
56 A
STF19NM65N
STF19NM65N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 15.5A max drain current. It operates in enhancement mode with a low on-resistance of 0.27Ω. Ideal for high-efficiency power management solutions.
400 mJ
650 V
15.5 A
.27 ohm
35 W
62 A
STF30NM60N
STF30NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
900 mJ
25 A
.13 ohm
NOT SPECIFIED
40 W
100 A
STF7N52K3
STF7N52K3 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 6.3 A and a breakdown voltage of 525 V. It operates in enhancement mode with a power dissipation of 25 W. Ideal for high-temperature environments, it supports efficient circuit designs.
525 V
6.2 A
6.3 A
.98 ohm
25 W
STI30NM60N
STI30NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
190 W
STP141NF55
STP141NF55 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
STP15NM60ND
STP15NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
125 W
STP180NS04ZC
STP180NS04ZC by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage. It has 480A IDM and 1000mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.0042 ohm RDS(on) and can handle up to 175°C temperature.
1000 mJ
33 V
120 A
.0042 ohm
480 A
STP19NM65N
STP19NM65N by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 62A IDM, 400mJ EAS, and 0.27ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and operates up to 150°C.
150 W
STP30NM60N
STP30NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 100A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STP6N62K3
STP6N62K3 from STMicroelectronics is a robust N-channel FET designed for switching applications. It features a 620V breakdown voltage, 22A max pulsed drain current, and operates at up to 150 °C. Ideal for high-power circuits, it ensures efficient performance with low on-resistance.
ULTRA LOW-ON RESISTANCE
140 mJ
620 V
5.5 A
1.2 ohm
90 W
22 A
STP7N52K3
STP7N52K3 by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 6.3 A, a breakdown voltage of 525 V, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STW15NM60ND
STW15NM60ND from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.299Ω and operates at up to 150 °C. Its robust design ensures reliability in demanding environments.
TO-247AC
STW19NM65N
STW19NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 15.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247
STW30NM60N
STW30NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 25A max drain current. It offers a low on-resistance of 0.13Ω and operates at up to 150 °C. This robust transistor is perfect for high-power circuits.
TIN
STW43NM60N
STW43NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 35A max drain current. It offers a low on-resistance of 0.095Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
35 A
.095 ohm
255 W
140 A
STW55NM50N
STW55NM50N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 54A max drain current, and 350W power dissipation. Ideal for high-efficiency power management in various electronic devices.
850 mJ
500 V
54 A
.054 ohm
350 W
216 A
STW55NM60ND
STW55NM60ND by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 204A IDM, 850mJ EAS, and 0.06 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 350W at 150°C.
51 A
.06 ohm
204 A
FDP86363_F085
Fairchild Semiconductor
FDP86363_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 110A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0028 ohm On Resistance, and operates in ENHANCEMENT MODE up to 175°C.
512 mJ
110 A
.0028 ohm
AEC-Q101
FDP2710_F085
FDP2710_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 50A Drain Current, and 0.047 ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 260W and can handle an Avalanche Energy of 483mJ.
483 mJ
250 V
50 A
4 A
.047 ohm
260 W
BLF145,112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Maximum Drain-Source On Resistance: .75 ohm;
65 V
6 A
.75 ohm
O-CRFM-F4
NOT APPLICABLE
4
200 Cel
CERAMIC, METAL-SEALED COFIRED
ROUND
68 W
FLAT
RADIAL
AMPLIFIER
BUK119-50DL,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 50 V; Transistor Application: SWITCHING; JESD-609 Code: e3;
BUILT-IN OVER TEMPERATURE CIRCUIT
50 V
20 A
.028 ohm
BUK7511-55B,127
NXP Semiconductors BUK7511-55B,127 is a N-channel FET with 55V DS breakdown voltage and 338A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 157W and operating temperature of 175°C, this MOSFET offers high performance in various power electronics systems.
173 mJ
75 A
.011 ohm
157 W
338 A
BUK75150-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36.6 W; Maximum Drain Current (Abs) (ID): 11 A; Terminal Position: SINGLE;
16 mJ
11 A
.15 ohm
36.6 W
44 A
BUK7520-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 118 W; Maximum Pulsed Drain Current (IDM): 217 A; JESD-609 Code: e3;
115 mJ
.02 ohm
118 W
217 A
BUK7526-100B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 157 W; Maximum Pulsed Drain Current (IDM): 197 A; Minimum DS Breakdown Voltage: 100 V;
144 mJ
100 V
49 A
.026 ohm
197 A
BUK7528-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 96 W; Maximum Drain Current (ID): 40 A; Maximum Pulsed Drain Current (IDM): 160 A;
ESD PROTECTION
70 mJ
40 A
160 pF
96 W
160 A
62 ns
94 ns
BUK753R1-40B,127
NXP Semiconductors BUK753R1-40B,127 is a N-channel FET with 40V DS breakdown voltage and 902A IDM for switching applications. It features a single configuration with built-in diode, 0.0031 ohm RDS(on), and 300W Pd max in a plastic/epoxy package. Ideal for enhancement mode operation at up to 175°C.
1600 mJ
40 V
.0031 ohm
902 A
BUK7575-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 61 W; Terminal Position: SINGLE; Maximum Feedback Capacitance (Crss): 85 pF;
30 mJ
19.7 A
.075 ohm
85 pF
61 W
79 A
45 ns
35 ns
BUK9506-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 616 A;
LOGIC LEVEL COMPATIBLE
1100 mJ
.0067 ohm
230 W
616 A
BUK9506-75B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
852 mJ
75 V
.0066 ohm
612 A
BUK9508-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
670 mJ
.0085 ohm
200 W
503 A
BUK9508-55B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 203 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
352 mJ
.0093 ohm
203 W
439 A
BUK9509-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 211 W; JEDEC-95 Code: TO-220AB; JESD-609 Code: e3;
108 A
.01 ohm
211 W
433 A
BUK9515-100A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Minimum DS Breakdown Voltage: 100 V; Terminal Finish: TIN;
120 mJ
.016 ohm
313 A
BUK9518-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
125 mJ
57 A
.018 ohm
228 A
215 ns
175 ns
BUK9520-55,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 116 W; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 235 pF;
110 mJ
52 A
235 pF
116 W
208 A
225 ns
200 ns
BUK9528-100A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Drain-Source On Resistance: .028 ohm; Terminal Position: SINGLE;
45 mJ
166 W
195 A
BUK9529-100B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 157 W; Terminal Position: SINGLE; Transistor Application: SWITCHING;
152 mJ
46 A
.032 ohm
186 A
BUK952R8-30B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
2300 mJ
30 V
.003 ohm
950 A
BUK9535-100A,127
NXP Semiconductors' BUK9535-100A,127 is an N-channel Power FET with 100V DS breakdown voltage and 165A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.039 ohm max RDS(on). Operating in enhancement mode, this transistor has a max power dissipation of 149W at 175°C.
41 A
.039 ohm
149 W
165 A
BUK953R2-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Transistor Element Material: SILICON;
1200 mJ
.0035 ohm
888 A
BUK954R4-40B,127
NXP Semiconductors' BUK954R4-40B,127 is a N-channel Power FET with 40V DS breakdown voltage and 697A pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.0044 ohm max on-resistance, and 961mJ avalanche energy rating.
961 mJ
.0044 ohm
254 W
697 A
BUK9575-55A,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
72 mJ
.081 ohm
62 W
81 A
BUK9E3R2-40B,127
BUK9E3R2-40B,127 by NXP Semiconductors is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 888A IDM, and 0.0035 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 300W and can withstand up to 175°C.
BUK9E4R4-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 254 W; Maximum Drain-Source On Resistance: .0044 ohm; Operating Mode: ENHANCEMENT MODE;
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