Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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R5007FNX
ROHM
ROHM R5007FNX is a N-CHANNEL FET with 500V DS breakdown voltage, 28A IDM, and 1.3Ω max RDS(on). Ideal for switching applications, it features a built-in diode and operates in enhancement mode. The transistor's package style is flange mount with isolated case connection.
3.2 mJ
ISOLATED
SINGLE WITH BUILT-IN DIODE
500 V
7 A
1.3 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
1
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
260
N-CHANNEL
28 A
NO
THROUGH-HOLE
SINGLE
10
SWITCHING
SILICON
STB11NM60-1
STMicroelectronics
STB11NM60-1 by STMicroelectronics is a N-channel Power FET with 600V DS breakdown voltage, 44A IDM, and 0.45 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a max power dissipation of 110W and can withstand temperatures up to 150 °C.
350 mJ
600 V
11 A
.45 ohm
TO-262AA
R-PSIP-T3
e3
150 Cel
IN-LINE
110 W
44 A
Not Qualified
FET General Purpose Power
Matte Tin (Sn)
STB20NM50-1
STB20NM50-1 by STMicroelectronics is a N-channel FET with 500V DS breakdown voltage, 80A IDM, and 0.25 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 110W power dissipation and 150 °C max temperature.
650 mJ
20 A
.25 ohm
80 A
TIN
STE110NS20FD
STE110NS20FD by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 440A IDM, and 0.024 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W and can handle up to 150 °C temperature.
AVALANCHE RATED
750 mJ
200 V
110 A
.024 ohm
R-XUFM-X4
4
UNSPECIFIED
500 W
440 A
NICKEL
UPPER
STE48NM50
STE48NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, 192A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications due to its 450W Pdiss, EAS of 810mJ, and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
810 mJ
48 A
.1 ohm
R-PUFM-X4
NOT SPECIFIED
450 W
192 A
STE70NM50
STE70NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 70A Drain Current. Ideal for SWITCHING applications, it features a max Pulsed Drain Current of 280A and an Avalanche Energy Rating of 1400mJ. Operating in ENHANCEMENT MODE, this transistor has a 0.05 ohm On Resistance and can handle up to 460W power dissipation.
1400 mJ
70 A
.05 ohm
460 W
280 A
STP16NS25
STP16NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS breakdown voltage, ideal for SWITCHING applications. It features 64A max pulsed drain current and 0.28 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 140W and can handle up to 150 °C temperature.
600 mJ
250 V
16 A
.28 ohm
140 W
64 A
MATTE TIN
STP20NM50FP
STP20NM50FP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 35W at 150 °C.
35 W
STP8NM60
STP8NM60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, 32A IDM, and 1 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 100W.
200 mJ
8 A
1 ohm
100 W
32 A
STP8NS25FP
STP8NS25FP by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with ISOLATED case connection.
30 W
STP8NS25
STP8NS25 by STMicroelectronics is a N-CHANNEL FET with 250V DS Breakdown Voltage, 32A IDM, and 0.45 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 80W at max temp of 150 °C.
80 W
STP90NF03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; Terminal Finish: MATTE TIN;
30 V
90 A
.0065 ohm
175 Cel
150 W
360 A
STW20NM50
STW20NM50 by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 650mJ EAS, and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 214W at 150 °C.
TO-247
214 W
STY100NS20FD
STY100NS20FD by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 400A IDM, and 0.024 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power tasks.
100 A
400 A
STB70NF03L-1
STB70NF03L-1 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 280A IDM, and 0.0095 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Operates in enhancement mode at max temp of 175 °C.
500 mJ
DRAIN
.0095 ohm
STF150N10F7
STF150N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 260A IDM, and 0.0042 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175 °C.
495 mJ
100 V
65 A
.0042 ohm
67 pF
-55 Cel
260 A
STF80N10F7
STF80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 40A Drain Current, and 0.01 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with 160A Pulsed Drain Current. Operating range from -55 to 175 °C.
ULTRA LOW-ON RESISTANCE
40 A
.01 ohm
160 A
STFW38N65M5
STFW38N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM, 660mJ EAS, and 0.095 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with SILICON element material and METAL-OXIDE SEMICONDUCTOR technology.
ULTRA LOW RESISTANCE
660 mJ
650 V
30 A
.095 ohm
120 A
STP80N10F7
STP80N10F7 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 80A ID, and 0.01 ohm RDS. It is used for SWITCHING applications in ENHANCEMENT MODE with 320A IDM. Operating temp range: -55 to 175 °C.
320 A
IRFP450B
Fairchild Semiconductor
Fairchild Semiconductor's IRFP450B is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 56A IDM, 990mJ EAS, and 0.39 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C.
990 mJ
14 A
.39 ohm
205 W
56 A
FQA24N50F
FQA24N50F by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 24A, Pulsed Drain Current of 96A, and an On Resistance of 0.2 ohm. The transistor operates in ENHANCEMENT MODE and has a Max Power Dissipation of 290W.
1100 mJ
24 A
.2 ohm
290 W
96 A
IXFH12N50F
IXYS Corporation
IXYS Corporation's IXFH12N50F is a N-CHANNEL FET with 500V DS breakdown voltage and 48A IDM. Ideal for switching applications, it operates in enhancement mode with 0.4 ohm RDS(on) and 150°C max temp.
300 mJ
12 A
.4 ohm
STF6N52K3
STF6N52K3 by STMicroelectronics is a N-CHANNEL FET with 525V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max Pulsed Drain Current, 110mJ Avalanche Energy Rating, and 1.2ohm Max Drain-Source On Resistance. This METAL-OXIDE SEMICONDUCTOR transistor operates at up to 150 °C and has a power dissipation of 25W in a FLANGE MOUNT package.
ULTRA-LOW RESISTANCE
110 mJ
525 V
5 A
1.2 ohm
25 W
STP180N10F3
STP180N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has 120A Drain Current, 0.0048 ohm On Resistance, and 315W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates at up to 175 °C.
.0048 ohm
315 W
480 A
IPI057N08N3G
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Operating Mode: ENHANCEMENT MODE;
210 mJ
80 V
.0057 ohm
IPI80N06S3-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Minimum DS Breakdown Voltage: 55 V; No. of Elements: 1;
345 mJ
55 V
.0054 ohm
165 W
IPP100N06S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain-Source On Resistance: .0044 ohm; JESD-30 Code: R-PSFM-T3;
450 mJ
.0044 ohm
IPP100N06S3L-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Drain-Source On Resistance: .0062 ohm; Avalanche Energy Rating (EAS): 450 mJ;
LOGIC LEVEL COMPATIBLE
.0062 ohm
IPP45N06S3L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 95 mJ;
95 mJ
45 A
.0134 ohm
65 W
180 A
IPP80N06S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 210 W; Maximum Drain Current (ID): 80 A; Operating Mode: ENHANCEMENT MODE;
210 W
IPP80N06S3-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Minimum DS Breakdown Voltage: 55 V; Terminal Position: SINGLE;
IPP80N06S3L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 165 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 345 mJ;
.008 ohm
STP130NH02L
STP130NH02L by STMicroelectronics is a N-CHANNEL FET with 24V DS Breakdown Voltage, 360A IDM, and 0.0044 ohm RDS(on). Ideal for SWITCHING applications due to its 175°C Max Operating Temp and 150W Power Dissipation. It features SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package.
LOW THRESHOLD
900 mJ
24 V
SPI47N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Additional Features: AVALANCHE RATED; Maximum Pulsed Drain Current (IDM): 188 A;
400 mJ
47 A
.033 ohm
175 W
188 A
STW22NM60N
STW22NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
.22 ohm
125 W
IPI50R350CP
IPI50R350CP by Infineon is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It has a max IDM of 22A and EAS of 246mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.35 ohm RDS(on) and can handle up to 89W power dissipation at 150°C.
246 mJ
10 A
.35 ohm
89 W
22 A
IPS50R520CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 66 W; JESD-30 Code: R-PSIP-T3; Maximum Operating Temperature: 150 Cel;
166 mJ
7.1 A
.52 ohm
TO-251
66 W
15 A
BTS244ZE-3043
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220;
1650 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
35 A
.018 ohm
400 pF
TO-220
R-PSFM-T5
5
-40 Cel
170 W
AEC-Q101
100 ns
130 ns
NTP5404NRG
Onsemi
NTP5404NRG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 258A, and max power dissipation of 254W. Ideal for enhancement mode operation in high-power systems with its low on-resistance of 0.0045 ohm.
1000 mJ
40 V
167 A
136 A
.0045 ohm
254 W
258 A
STU75N3LLH6
STU75N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
75 A
.0084 ohm
60 W
300 A
30
NTD4809NH-1G
NTD4809NH-1G by Onsemi is a N-channel Power FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features a built-in diode, 0.0125 ohm RDS(on), and 52W max power dissipation. Operating in enhancement mode, this MOSFET has a max temp of 175 °C and is designed for through-hole mounting.
112.5 mJ
58 A
9 A
.0125 ohm
52 W
130 A
IPP80N04S3-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Minimum DS Breakdown Voltage: 40 V; Maximum Drain-Source On Resistance: .0042 ohm;
290 mJ
136 W
NTD4813NH-1G
NTD4813NH-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 90A IDM, and 0.0259 ohm RDS(ON). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-current applications like motor control and power supplies.
44.4 mJ
.0259 ohm
STD50N03L-1
STD50N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
230 mJ
.019 ohm
TO-251AB
NTD4815NH-1G
NTD4815NH-1G by Onsemi is a N-channel power FET with 30V DS breakdown voltage and 87A pulsed drain current. Ideal for switching applications, it features a single configuration with built-in diode and 0.015 ohm max drain-source resistance.
35.6 mJ
8.5 A
6.9 A
.015 ohm
32.6 W
87 A
NTD4815NH-35G
NTD4815NH-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 87A IDM, and 0.015 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 35.6mJ EAS rating. With SILICON element material and TIN finish, it operates up to 175 °C.
STW30NF20
STW30NF20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
.075 ohm
STW40NF20
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; No. of Elements: 1; Maximum Drain-Source On Resistance: .045 ohm;
.045 ohm
160 W
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