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STE70NM50

STMicroelectronics

STE70NM50 by STMicroelectronics

STE70NM50 by STMicroelectronics is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 70A Drain Current. Ideal for SWITCHING applications, it features a max Pulsed Drain Current of 280A and an Avalanche Energy Rating of 1400mJ. Operating in ENHANCEMENT MODE, this transistor has a 0.05 ohm On Resistance and can handle up to 460W power dissipation.

Median Price

$36.000

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 8 parts In-Stock

1+ parts

$29.850

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8

$29.850

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Bristol Electronics

USA . 9 parts In-Stock

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$36.000

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9

$36.000

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Nova Conductors

Japan . 15 parts In-Stock

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$44.194

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15

$44.194

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Vyrian

USA . 2,799 parts In-Stock

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2,799

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Digiode

USA . 2,561 parts In-Stock

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Anansix

USA . 1,179 parts In-Stock

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1,179

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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70

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ComSIT Distribution GmbH

Germany . 20 parts In-Stock

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20

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ComSIT USA

USA . 20 parts In-Stock

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20

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Dan-Mar Components

USA . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 348 parts In-Stock

1+ parts

$0.753

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348

$0.753

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Aztec Data Supply Inc.

USA . 68 parts In-Stock

1+ parts

$0.801

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68

$0.801

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IDEA Electronic Components Group

UK . 1,396 parts In-Stock

1+ parts

$1.365

100+ parts

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$1.229

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1,396

$1.365

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$1.229

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MKK Technologies

India . 582 parts In-Stock

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$2.567

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582

$2.567

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DigiPath Technology Company

USA . 582 parts In-Stock

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$2.567

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582

$2.567

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AZTECH Wire

Italy . 204 parts In-Stock

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$14.613

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204

$14.613

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Aranea Global

USA . 50 parts In-Stock

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$43.311

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$41.578

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50

$43.311

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$41.578

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Continental Prestige Electronics

USA . 4,088 parts In-Stock

1+ parts

$44.194

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$43.311

4,088

$44.194

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$43.311

Ampacity Inc.

Singapore . 787 parts In-Stock

1+ parts

$61.050

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787

$61.050

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Corphita

USA . 4,875 parts In-Stock

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4,875

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Alle Elektronik GmbH

Germany . 3,020 parts In-Stock

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Parana Technologies

USA . 646 parts In-Stock

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$1.632

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Argo Parts USA

USA . 450 parts In-Stock

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450

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Perfect Parts

USA . 339 parts In-Stock

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339

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Overview

Unlock the power of efficiency and reliability with the STE70NM50 by STMicroelectronics. As a leader in the industry, STMicroelectronics delivers top-notch quality and performance in their Power FET category. Ideal for switching applications, this N-channel transistor offers a single configuration with a built-in diode for added convenience. With a high DS breakdown voltage of 500V and a maximum drain current of 70A, this transistor provides exceptional value and benefits to customers looking for a dependable solution for their projects. Experience the advantages of STMicroelectronics technology and take your designs to the next level with the STE70NM50.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

This channel type allows for efficient switching and control of the transistor, making it suitable for a wide range of electronic devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and adds versatility to the transistor, making it a convenient choice for different projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and efficient performance in various electronic systems.

Minimum DS Breakdown Voltage: 500 V

With a high breakdown voltage, this transistor can handle high voltage loads, making it suitable for industrial and power management applications.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and install the transistor, providing convenience and flexibility in circuit design.

Operating Mode: ENHANCEMENT MODE

This operating mode allows for easy control and modulation of the transistor, making it ideal for applications requiring variable or precise output.

Maximum Pulsed Drain Current (IDM): 280 A

With a high pulsed drain current rating, this transistor can handle sudden surges in power, making it reliable in demanding conditions.

Avalanche Energy Rating (EAS): 1400 mJ

The high avalanche energy rating ensures the transistor can withstand short circuit conditions, providing added protection and reliability in operation.

Maximum Drain Current (Abs) (ID): 70 A

With a high drain current rating, this transistor can handle heavy loads, making it suitable for high-power applications.

No. of Terminals: 4

The four terminals provide ample connectivity options, allowing for versatile circuit integration and design flexibility.

Maximum Power Dissipation (Abs): 460 W

The high power dissipation rating ensures the transistor can handle heat dissipation effectively, making it reliable in high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides easy and secure installation of the transistor, ensuring stability and reliability in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers efficient switching and control capabilities, making the transistor suitable for various electronic applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature rating, this transistor can operate effectively in harsh environments, making it reliable in demanding conditions.

Transistor Element Material: SILICON

The silicon element material ensures stable and consistent performance of the transistor, making it a dependable choice for long-term use.

Maximum Drain-Source On Resistance: 0.05 ohm

The low drain-source on resistance minimizes power loss and improves efficiency, making the transistor suitable for high-performance applications.

Terminal Position: UPPER

The upper terminal position simplifies circuit design and layout, providing ease of connection and integration in electronic systems.

Case Connection: ISOLATED

The isolated case connection adds an extra layer of safety and protection, making the transistor a reliable choice for various applications.

Technical Specifications

Power Field Effect Transistors (FET) STE70NM50 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

1400 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

70 A

Maximum Drain Current (ID):

70 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

280 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STE70NM50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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