Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTD4856N-1G
Onsemi
NTD4856N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Pulsed Drain Current, and 0.0068 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
180.5 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
25 V
89 A
13.3 A
.0068 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSIP-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
IN-LINE
260
N-CHANNEL
60 W
179 A
Not Qualified
FET General Purpose Power
NO
TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NTD4856N-35G
NTD4856N-35G by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Pulsed Drain Current, and 0.0068 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 60W at 175 °C.
NTD4857N-1G
NTD4857N-1G by Onsemi is a Power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 25V min DS breakdown voltage, 156A max pulsed drain current, and 0.008 ohm max drain-source resistance. Operating in enhancement mode, it has a 175 °C max temp rating and 56.6W power dissipation capability.
144.5 mJ
78 A
12 A
.008 ohm
56.6 W
156 A
NTD4858N-35G
NTD4858N-35G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 146A, avalanche energy rating of 112.5mJ, and max operating temperature of 175 °C. Ideal for high-power switching circuits requiring efficient performance in a compact package.
112.5 mJ
73 A
11.2 A
.0093 ohm
54.5 W
146 A
MATTE TIN
30
NTD4860N-1G
NTD4860N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 130A IDM, and 0.0111 ohm RDS(on). With an EAS of 84.5 mJ and operating up to 175 °C, it is ideal for high-power switching circuits.
84.5 mJ
65 A
10.4 A
.0111 ohm
50 W
130 A
NTD4863N-1G
NTD4863N-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 98A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features include 60.5mJ EAS, 36.6W Pdiss, and max temp of 175 °C.
60.5 mJ
49 A
9.2 A
.014 ohm
36.6 W
98 A
NTD4865N-1G
NTD4865N-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 87A IDM, and 0.0109 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration with built-in diode in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 33.3W at 175 °C temp.
50 mJ
44 A
8.5 A
.0109 ohm
33.3 W
87 A
FET General Purpose Powers
STF16NM50N
STMicroelectronics
STF16NM50N by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 500V breakdown voltage and a max drain current of 15A. It operates in enhancement mode with a low on-resistance of 0.26Ω. Ideal for high-power circuits, it ensures efficient performance up to 150 °C.
470 mJ
ISOLATED
500 V
15 A
.26 ohm
TO-220AB
R-PSFM-T3
150 Cel
FLANGE MOUNT
30 W
60 A
STI16NM50N
STI16NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
TO-262AA
245
125 W
40
STP16NF25
STP16NF25 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 13 A and a breakdown voltage of 250 V. It operates in enhancement mode with a power dissipation of up to 90 W. This versatile transistor is suitable for various electronic circuits.
100 mJ
250 V
13 A
.235 ohm
90 W
52 A
STP16NM50N
STP16NM50N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW16NM50N
STW16NM50N by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Its robust design ensures reliability in high-power circuits.
TO-247
e3/e1
NOT SPECIFIED
MATTE TIN/TIN SILVER COPPER
STF23NM60N
STF23NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
700 mJ
600 V
19 A
.18 ohm
35 W
76 A
STI23NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSIP-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
150 W
STP23NM60N
STP23NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 600V breakdown voltage and a max drain current of 19A. It offers a low on-resistance of 0.18Ω and operates at up to 150 °C. This robust FET is suitable for high-power circuits.
STU60N3LH5
STU60N3LH5 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 48 A, a breakdown voltage of 30 V, and operates at temperatures from -55 °C to 175°C. Its compact design ensures efficient power management in various electronic devices.
ULTRA-LOW RESISTANCE
160 mJ
30 V
48 A
.0114 ohm
TO-251
-55 Cel
192 A
STW23NM60N
STW23NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 76A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
BUZ11_R4941
Fairchild Semiconductor
Fairchild Semiconductor's BUZ11_R4941 is a N-CHANNEL FET with 30A ID and 75W power dissipation. Ideal for applications requiring high drain current, such as power supplies and motor control systems. Operating in enhancement mode, it offers reliable performance up to 150°C temperature.
30 A
e0
75 W
Tin/Lead (Sn85Pb15)
STF11NM65N
STF11NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 12A max drain current. It operates in enhancement mode with a low on-resistance of 0.38Ω. Ideal for high-efficiency power management solutions.
300 mJ
650 V
.38 ohm
STF15NM60N
STF15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
14 A
.299 ohm
56 A
STI15NM60N
STI15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP11NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
STP15NM60N
STP15NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and 125W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STP180N55F3
STP180N55F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and power dissipation up to 330 W. Ideal for high-efficiency power management in various electronic devices.
1000 mJ
55 V
120 A
.0038 ohm
330 W
480 A
Matte Tin (Sn)
STW15NM60N
STW15NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.299Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
FQA36P15_F109
FQA36P15_F109 by Fairchild Semiconductor is a P-CHANNEL Power FET with 150V DS Breakdown Voltage. It features a max Drain Current of 36A, 0.09 ohm On Resistance, and 294W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has a package style of FLANGE MOUNT and operates up to 175°C.
FAST SWITCHING
1400 mJ
150 V
36 A
.09 ohm
P-CHANNEL
294 W
144 A
Other Transistors
STB11NM60N-1
STB11NM60N-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 10A max drain current, and 90W power dissipation. This versatile component operates efficiently in high-temperature environments up to 150 °C.
200 mJ
10 A
.45 ohm
40 A
STP200N4F3
STP200N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
862 mJ
40 V
.0044 ohm
300 W
BTS282ZE-3230
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LOGIC LEVEL COMPATIBLE
2000 mJ
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
49 V
80 A
.0095 ohm
R-PSFM-T7
7
320 A
IRF540N_R4942
Fairchild Semiconductor's IRF540N_R4942 is a N-CHANNEL Power FET with 33A max drain current and 120W power dissipation. Ideal for applications requiring high power handling in enhancement mode operation, such as motor control and power supplies.
33 A
120 W
Tin/Lead (Sn/Pb)
STD8NM60N-1
STD8NM60N-1 by STMicroelectronics is an N-channel FET designed for switching applications. It features a 600V breakdown voltage, 28A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
AVALANCHE RATED
7 A
.65 ohm
TO-251AA
70 W
28 A
STF20NM65N
STF20NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
115 mJ
.27 ohm
40 W
STF8NM60N
STF8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. This versatile FET is suitable for high-efficiency power management solutions.
25 W
STP15NM65N
STP15NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 15.5A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
187 mJ
15.5 A
STP20NM65N
STP20NM65N from STMicroelectronics is a powerful N-channel MOSFET designed for efficient switching applications. It features a 650V breakdown voltage, 19A max drain current, and 160W power dissipation. Ideal for high-performance power management in various electronic devices.
160 W
STP8NM60N
STP8NM60N by STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a 600V breakdown voltage, 28A pulsed drain current, and operates at up to 150 °C. Its compact design ensures efficient power management in various electronic circuits.
STU85N3LH5
STU85N3LH5 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.0071 Ω).
165 mJ
.0071 ohm
STW20NM65N
STW20NM65N by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 650V breakdown voltage and 19A max drain current. It offers a low on-resistance of 0.19Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
500 mJ
.19 ohm
NTD6415AN-1G
NTD6415AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 89A IDM, and 0.055 ohm RDS(on). Ideal for applications requiring high drain current handling such as power supplies and motor control systems. Operating in enhancement mode, it features a built-in diode and can withstand up to 175 °C temperature.
79 mJ
100 V
23 A
.055 ohm
NTD6416AN-1G
NTD6416AN-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 62A IDM, and 0.081 ohm RDS. Ideal for power applications requiring high drain current handling in enhancement mode operation. Suitable for use in various electronic devices due to its high power dissipation of 71W and operating temperature up to 175 °C.
43 mJ
17 A
.081 ohm
71 W
62 A
NTP6410ANG
NTP6410ANG by Onsemi is a single N-channel power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 305A. Ideal for applications requiring high power dissipation up to 188W, such as in flange mount configurations for enhanced performance in enhancement mode operation.
.013 ohm
188 W
305 A
IPI100P03P3L-04
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (Abs) (ID): 100 A; Terminal Finish: MATTE TIN;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
450 mJ
100 A
.0043 ohm
200 W
400 A
IPP04CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Terminal Finish: TIN;
.0042 ohm
IPP05CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 100 A; JEDEC-95 Code: TO-220AB;
826 mJ
.0051 ohm
IPP06CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 400 A;
480 mJ
.0062 ohm
214 W
IPP08CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; No. of Elements: 1; Additional Features: LOGIC LEVEL COMPATIBLE;
254 mJ
167 W
392 A
IPP100P03P3L-04
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSFM-T3;
IPW60R250CP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Drain-Source On Resistance: .25 ohm; Package Style (Meter): FLANGE MOUNT;
345 mJ
.25 ohm
104 W
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