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STF20NM65N

STMicroelectronics

STF20NM65N by STMicroelectronics

STF20NM65N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,655 parts In-Stock

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6,655

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Anansix

USA . 1,078 parts In-Stock

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1,078

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R&J Components

USA . 950 parts In-Stock

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950

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Digiode

USA . 856 parts In-Stock

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856

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IDEA Electronic Components Group

UK . 1,752 parts In-Stock

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$1.469

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$1.322

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1,752

$1.469

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$1.322

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$1.473

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$1.340

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$1.208

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600

$1.473

$1.340

$1.208

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MKK Technologies

India . 1,010 parts In-Stock

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$2.763

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1,010

$2.763

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DigiPath Technology Company

USA . 1,010 parts In-Stock

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$2.763

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1,010

$2.763

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AZTECH Wire

Italy . 341 parts In-Stock

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$15.530

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341

$15.530

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A-Z Elektronik GmbH

Germany . 4,949 parts In-Stock

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4,949

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Corphita

USA . 4,647 parts In-Stock

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Parana Technologies

USA . 1,208 parts In-Stock

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$1.757

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$1.757

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Alle Elektronik GmbH

Germany . 1,040 parts In-Stock

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Perfect Parts

USA . 986 parts In-Stock

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Kepictronics

USA . 117 parts In-Stock

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Overview

Unlock the power of innovation with the STF20NM65N from STMicroelectronics, a trusted leader in semiconductor solutions. This robust N-channel power FET is engineered for superior switching performance, making it ideal for diverse applications from automotive to industrial systems. With its high breakdown voltage and efficient thermal management, it offers exceptional reliability and energy savings—empowering your designs to perform at their best while ensuring peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy not only provides good insulation but also contributes to lightweight and compact design, making it convenient for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are widely favored for their better performance, delivering higher efficiency and faster switching speeds compared to P-channel devices.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances reliability by providing protection against reverse voltage, making it suitable for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures efficient power control and management in various electronic circuits.

Minimum DS Breakdown Voltage: 650 V

A high breakdown voltage of 650V allows this FET to handle high-voltage applications, increasing its versatility and reliability.

Package Shape: RECTANGULAR

The rectangular shape facilitates easier integration into printed circuit boards (PCBs), optimizing space utilization.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures robust mechanical support and reliable electrical connections, making it ideal for high-power applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides high input impedance and allows for lower gate drive power requirements, improving overall circuit efficiency.

Maximum Pulsed Drain Current (IDM): 60 A

The ability to handle pulsed currents up to 60A makes this FET suitable for applications requiring high power bursts, enhancing performance.

Avalanche Energy Rating (EAS): 115 mJ

A high avalanche energy rating means this FET can withstand sudden energy transients, providing enhanced protection and longevity.

Maximum Drain Current (Abs) (ID): 19 A

With a maximum drain current rating of 19A, it can effectively drive high loads in various applications without overheating.

No. of Terminals: 3

The three-terminal configuration simplifies circuit design and ensures flexibility in various applications, adding to its versatility.

Maximum Power Dissipation (Abs): 40 W

The ability to dissipate up to 40W of power ensures the FET can operate under high load conditions without thermal failures.

Package Style (Meter): FLANGE MOUNT

Flange mount design enables secure attachment and robust thermal management, improving stability in demanding environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers excellent switching speeds and improved efficiency, making this FET ideal for modern electronics.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows this FET to function reliably in high-temperature environments, enhancing longevity.

Transistor Element Material: SILICON

Silicon material contributes to the overall reliability and efficiency of the transistor, making it a widely used option in the industry.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and corrosion resistance, ensuring reliable connections over time.

Maximum Drain Current (ID): 15 A

With a maximum drain current rating of 15A, it provides ample capacity to power various electronic devices effectively.

Maximum Drain-Source On Resistance: 0.27 ohm

A low on-resistance of 0.27 ohm minimizes power loss and improves efficiency, making it excellent for power management applications.

Terminal Position: SINGLE

The single terminal position simplifies layout design and integration within circuits, making it user-friendly.

Case Connection: ISOLATED

Isolated case connection ensures safe operation by preventing unwanted interactions with other circuit components, increasing design safety.

Technical Specifications

Power Field Effect Transistors (FET) STF20NM65N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

115 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (Abs) (ID):

19 A

Maximum Drain Current (ID):

15 A

Maximum Drain-Source On Resistance:

.27 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

60 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STF20NM65N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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