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STF2N80K5

STMicroelectronics

STF2N80K5 by STMicroelectronics

STF2N80K5 by STMicroelectronics is a power FET with 800V DS breakdown voltage, 8A max pulsed drain current, and 60.5mJ avalanche energy rating. It is used for switching applications in various industries.

Median Price

$1.360

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 50 parts In-Stock

1+ parts

$0.491

100+ parts

$0.489

1k+ parts

-

10k+ parts

-

50

$0.491

$0.489

-

-

Newark

USA . 6 parts In-Stock

1+ parts

$1.360

100+ parts

$0.890

1k+ parts

$0.687

10k+ parts

$0.538

6

$1.360

$0.890

$0.687

$0.538

DigiKey

USA . 817 parts In-Stock

1+ parts

$2.150

100+ parts

$0.928

1k+ parts

$0.676

10k+ parts

$0.534

817

$2.150

$0.928

$0.676

$0.534

Mouser Electronics

USA . 187 parts In-Stock

1+ parts

$2.150

100+ parts

$0.916

1k+ parts

$0.676

10k+ parts

$0.547

187

$2.150

$0.916

$0.676

$0.547

Verical

USA . 1,417 parts In-Stock

1+ parts

-

100+ parts

$0.514

1k+ parts

$0.469

10k+ parts

$0.468

1,417

-

$0.514

$0.469

$0.468

EBV Elektronik

Germany . 1,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,050

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,754 parts In-Stock

1+ parts

$0.603

100+ parts

-

1k+ parts

-

10k+ parts

-

3,754

$0.603

-

-

-

TME

Poland . 148 parts In-Stock

1+ parts

$1.950

100+ parts

$0.836

1k+ parts

$0.623

10k+ parts

$0.576

148

$1.950

$0.836

$0.623

$0.576

Cyclops Electronics Ltd

UK . 33,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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33,900

-

-

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

1+ parts

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2,000

-

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Anansix

USA . 1,781 parts In-Stock

1+ parts

-

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1,781

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Vyrian

USA . 1,320 parts In-Stock

1+ parts

-

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1,320

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-

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IBS Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1.087

1k+ parts

$1.031

10k+ parts

-

100

-

$1.087

$1.031

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Nova Conductors

Japan . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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55

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 904 parts In-Stock

1+ parts

$0.418

100+ parts

$0.408

1k+ parts

$0.405

10k+ parts

-

904

$0.418

$0.408

$0.405

-

Ampacity Inc.

Singapore . 1,203 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

$0.540

-

-

-

Corphita

USA . 619 parts In-Stock

1+ parts

$0.572

100+ parts

-

1k+ parts

-

10k+ parts

-

619

$0.572

-

-

-

IDEA Electronic Components Group

UK . 422 parts In-Stock

1+ parts

$1.665

100+ parts

-

1k+ parts

$1.499

10k+ parts

-

422

$1.665

-

$1.499

-

Corohmni

South Africa . 609 parts In-Stock

1+ parts

$1.728

100+ parts

-

1k+ parts

-

10k+ parts

-

609

$1.728

-

-

-

Aztec Data Supply Inc.

USA . 989 parts In-Stock

1+ parts

$1.765

100+ parts

-

1k+ parts

-

10k+ parts

-

989

$1.765

-

-

-

MKK Technologies

India . 502 parts In-Stock

1+ parts

$3.131

100+ parts

-

1k+ parts

-

10k+ parts

-

502

$3.131

-

-

-

DigiPath Technology Company

USA . 502 parts In-Stock

1+ parts

$3.131

100+ parts

-

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-

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502

$3.131

-

-

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Microchip USA

USA . 3,598 parts In-Stock

1+ parts

$9.555

100+ parts

-

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10k+ parts

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3,598

$9.555

-

-

-

Epart123

USA . 34,000 parts In-Stock

1+ parts

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100+ parts

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34,000

-

-

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GreenTree Electronics

Israel . 34,000 parts In-Stock

1+ parts

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34,000

-

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

-

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Lixinc

USA . 9,615 parts In-Stock

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9,615

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Argo Parts USA

USA . 3,971 parts In-Stock

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3,971

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Perfect Parts

USA . 3,241 parts In-Stock

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3,241

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Continental Prestige Electronics

USA . 2,928 parts In-Stock

1+ parts

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2,928

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-

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A-Z Elektronik GmbH

Germany . 1,506 parts In-Stock

1+ parts

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100+ parts

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1,506

-

-

-

-

Parana Technologies

USA . 659 parts In-Stock

1+ parts

-

100+ parts

$1.991

1k+ parts

-

10k+ parts

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659

-

$1.991

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Aranea Global

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

-

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Kepictronics

USA . 184 parts In-Stock

1+ parts

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184

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Overview

Discover the STF2N80K5, a high-quality power field effect transistor (FET) by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics offers reliable and innovative solutions for various applications. The STF2N80K5 is perfect for switching purposes, with its 800V minimum DS breakdown voltage ensuring efficient performance. This single-channel FET also features a built-in diode, enhancing its functionality. With a maximum pulsed drain current of 8A and an avalanche energy rating of 60.5mJ, this transistor delivers exceptional power and reliability. Its metal-oxide semiconductor technology guarantees superior performance, while its silicon element material ensures durability. Whether you're in the automotive, industrial, or consumer electronics sector, the STF2N80K5 provides immense value, benefits, and advantages that will elevate your projects to new heights. Upgrade to the STF2N80K5 today and experience the difference firsthand!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material ensures durability and protection, making the product suitable for rugged environments.

Polarity or Channel Type

N-CHANNEL - The N-channel design provides excellent switching capabilities, making it ideal for various applications.

Configuration

SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit design and enhances efficiency, offering convenience and cost-effectiveness.

Transistor Application

SWITCHING - Specifically designed for switching applications, this FET delivers high performance and reliability in controlling the flow of current.

Minimum DS Breakdown Voltage

800 V - With a high breakdown voltage, this FET can handle higher voltage applications, ensuring reliable operation and protection against electrical surges.

Package Shape

RECTANGULAR - The rectangular shape of the package facilitates easy mounting and offers space-saving benefits in crowded circuits.

Terminal Form

THROUGH-HOLE - The through-hole terminals provide sturdy connectivity and soldering options, ensuring secure and reliable connections.

Operating Mode

ENHANCEMENT MODE - The enhancement mode operation allows for better control and precision in switching applications, offering improved performance and efficiency.

Maximum Pulsed Drain Current (IDM)

8 A - With a high pulsed drain current rating, this FET can handle heavy loads and short duration pulses, making it suitable for demanding applications.

Avalanche Energy Rating (EAS)

60.5 mJ - The high avalanche energy rating ensures the FET's ability to absorb and dissipate high energy spikes, enhancing its robustness and reliability.

Maximum Drain Current (Abs) (ID)

2 A - The maximum drain current rating of 2 A allows the FET to handle substantial current loads, making it suitable for various circuit designs.

No. of Terminals

3 - With three terminals, this FET provides easy integration into electronic circuits, offering flexibility in application designs.

Maximum Power Dissipation (Abs)

20 W - The high power dissipation rating ensures the FET can handle significant power loads while maintaining safe operating conditions, making it suitable for demanding environments.

Package Style (Meter)

FLANGE MOUNT - The flange mount package style enables easy and secure attachment to mounting surfaces, ensuring mechanical stability and enhanced heat dissipation.

Field Effect Transistor Technology

METAL-OXIDE SEMICONDUCTOR - The metal-oxide semiconductor technology employed in this FET ensures high performance, reliability, and thermal stability for a wide range of applications.

Maximum Operating Temperature

150 °C - With a high maximum operating temperature, this FET can withstand demanding environments and maintain stable performance under high heat conditions.

Transistor Element Material

SILICON - The silicon material used in the transistor element provides excellent electrical properties, enhancing its performance and reliability.

Minimum Operating Temperature

55 °C - The low minimum operating temperature allows this FET to function reliably in extreme cold environments, increasing its versatility.

Maximum Drain-Source On Resistance

4.5 ohm - With a low drain-source on resistance, this FET minimizes power loss and ensures efficient current flow, making it suitable for power-sensitive applications.

Terminal Position

SINGLE - The single terminal position simplifies circuit connection and ensures easy integration into electronic designs, providing flexibility in layout and assembly.

Case Connection

ISOLATED - The isolated case connection provides electrical insulation, ensuring efficient and safe operation in various circuit configurations.

Technical Specifications

Power Field Effect Transistors (FET) STF2N80K5 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

60.5 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

4.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

8 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STF2N80K5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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